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公开(公告)号:US07800224B2
公开(公告)日:2010-09-21
申请号:US11965983
申请日:2007-12-28
申请人: Joo-sang Lee , O-seob Jeon , Yong-suk Kwon , Frank Chen , Adams Zhu
发明人: Joo-sang Lee , O-seob Jeon , Yong-suk Kwon , Frank Chen , Adams Zhu
IPC分类号: H01L23/495
CPC分类号: H01L23/49575 , H01L23/49531 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/2076 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: A power device package according to the one embodiment of the present invention includes an insulating substrate with an interconnection pattern disposed on the insulating substrate. The interconnection pattern comprises a single conductive layer comprising a first metal layer, and a multiple conductive layer comprising another first metal layer and a second metal layer disposed on the another first metal layer. A plurality of wires are attached to an upper surface of the single conductive layer and/or an upper surface of the second metal layer of the multiple conductive layer. Contact pads on a power control semiconductor chip and a low power semiconductor chip driving the power control semiconductor chip are electrically connected to the wires.
摘要翻译: 根据本发明的一个实施例的功率器件封装包括布置在绝缘衬底上的布线图案的绝缘衬底。 互连图案包括包括第一金属层的单个导电层和包括另一第一金属层和设置在另一第一金属层上的第二金属层的多导电层。 多个导线附着到单个导电层的上表面和/或多导电层的第二金属层的上表面。 驱动功率控制半导体芯片的功率控制半导体芯片和低功率半导体芯片上的接触焊盘电连接到导线。
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公开(公告)号:US20080157310A1
公开(公告)日:2008-07-03
申请号:US11965983
申请日:2007-12-28
申请人: Joo-sang Lee , O-seob Jeon , Yong-suk Kwon , Frank Chen , Adams Zhu
发明人: Joo-sang Lee , O-seob Jeon , Yong-suk Kwon , Frank Chen , Adams Zhu
IPC分类号: H01L23/495
CPC分类号: H01L23/49575 , H01L23/49531 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/2076 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: A power device package according to the one embodiment of the present invention includes an insulating substrate with an interconnection pattern disposed on the insulating substrate. The interconnection pattern comprises a single conductive layer comprising a first metal layer, and a multiple conductive layer comprising another first metal layer and a second metal layer disposed on the another first metal layer. A plurality of wires are attached to an upper surface of the single conductive layer and/or an upper surface of the second metal layer of the multiple conductive layer. Contact pads on a power control semiconductor chip and a low power semiconductor chip driving the power control semiconductor chip are electrically connected to the wires.
摘要翻译: 根据本发明的一个实施例的功率器件封装包括布置在绝缘衬底上的布线图案的绝缘衬底。 互连图案包括包括第一金属层的单个导电层和包括另一第一金属层和设置在另一第一金属层上的第二金属层的多导电层。 多个导线附着到单个导电层的上表面和/或多导电层的第二金属层的上表面。 驱动功率控制半导体芯片的功率控制半导体芯片和低功率半导体芯片上的接触焊盘电连接到导线。
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公开(公告)号:US08138081B2
公开(公告)日:2012-03-20
申请号:US12580560
申请日:2009-10-16
申请人: Adams Zhu , Xingquan Fang , Fred Ren , Yongsuk Kwon
发明人: Adams Zhu , Xingquan Fang , Fred Ren , Yongsuk Kwon
IPC分类号: H01L21/44
CPC分类号: H01L23/4952 , H01L23/3107 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/13144 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48475 , H01L2224/48599 , H01L2224/48655 , H01L2224/48699 , H01L2224/48755 , H01L2224/78313 , H01L2224/85051 , H01L2224/85455 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01202 , H01L2924/014 , H01L2924/181 , H01L2924/20755 , H01L2924/20757 , H01L2924/2076 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要: The invention includes a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a leadframe having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.
摘要翻译: 本发明包括一种封装的半导体器件,其中接合线通过铝凸块接合结合到引线上。 半导体器件安装在具有镀镍导线的引线框架上。 为了形成诸如2密耳直径的线的细铝线与引线之间的凸起接合,铝凸块被接合到镀镍,并且导线被接合到凸点。 凸块是掺杂有镍的铝,并且由诸如6密耳直径的电线的大直径电线形成。
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公开(公告)号:US20070216026A1
公开(公告)日:2007-09-20
申请号:US11385022
申请日:2006-03-20
申请人: Adams Zhu , Xingquan Fang , Fred Ren , Yongsuk Kwon
发明人: Adams Zhu , Xingquan Fang , Fred Ren , Yongsuk Kwon
IPC分类号: H01L23/48
CPC分类号: H01L23/4952 , H01L23/3107 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/13144 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48475 , H01L2224/48599 , H01L2224/48655 , H01L2224/48699 , H01L2224/48755 , H01L2224/78313 , H01L2224/85051 , H01L2224/85455 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01202 , H01L2924/014 , H01L2924/181 , H01L2924/20755 , H01L2924/20757 , H01L2924/2076 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要: The invention includes a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a leadframe having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.
摘要翻译: 本发明包括一种封装的半导体器件,其中接合线通过铝凸块接合结合到引线上。 半导体器件安装在具有镀镍导线的引线框架上。 为了形成诸如2密耳直径的线的细铝线与引线之间的凸起接合,铝凸块被接合到镀镍,并且导线被接合到凸点。 凸块是掺杂有镍的铝,并且由诸如6密耳直径的电线的大直径电线形成。
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公开(公告)号:US20100035385A1
公开(公告)日:2010-02-11
申请号:US12580560
申请日:2009-10-16
申请人: Adams Zhu , Xingquan Fang , Fred Ren , Yongsuk Kwon
发明人: Adams Zhu , Xingquan Fang , Fred Ren , Yongsuk Kwon
IPC分类号: H01L21/56
CPC分类号: H01L23/4952 , H01L23/3107 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/13144 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48475 , H01L2224/48599 , H01L2224/48655 , H01L2224/48699 , H01L2224/48755 , H01L2224/78313 , H01L2224/85051 , H01L2224/85455 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01202 , H01L2924/014 , H01L2924/181 , H01L2924/20755 , H01L2924/20757 , H01L2924/2076 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要: The invention includes a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a leadframe having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.
摘要翻译: 本发明包括一种封装的半导体器件,其中接合线通过铝凸块接合结合到引线上。 半导体器件安装在具有镀镍导线的引线框架上。 为了形成诸如2密耳直径的线的细铝线与引线之间的凸起接合,铝凸块被接合到镀镍,并且导线被接合到凸点。 凸块是掺杂有镍的铝,并且由诸如6密耳直径的电线的大直径电线形成。
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