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公开(公告)号：US08890184B2
公开(公告)日：2014-11-18
申请号：US13370996
申请日：2012-02-10
申请人： Joo-sung Kim , Taek Kim , Moon-seung Yang
发明人： Joo-sung Kim , Taek Kim , Moon-seung Yang
摘要： A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer.
摘要翻译： 一种纳米结构发光器件，包括：第一类型半导体层; 多个纳米结构，每个纳米结构包括在第一类型半导体层上以三维（3D）形状生长的第一类型半导体纳米芯，形成为围绕第一类型半导体纳米芯的表面的有源层，以及第二 形成为包围有源层的表面并包括铟（In）的半导体层; 以及至少一个扁平结构层，其包括依次形成在与第一类型半导体层平行的第一类型半导体层上的平面有源层和平坦 - 二
极型半导体层。-
公开(公告)号：US08222663B2
公开(公告)日：2012-07-17
申请号：US12458797
申请日：2009-07-23
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/12
摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.
摘要翻译： 提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。 晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。 当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。
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公开(公告)号：US20100124798A1
公开(公告)日：2010-05-20
申请号：US12458900
申请日：2009-07-27
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-Seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-Seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L21/28
CPC分类号： H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.
摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。
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公开(公告)号：US20100123158A1
公开(公告)日：2010-05-20
申请号：US12458797
申请日：2009-07-23
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
CPC分类号： H01L33/0079 , H01L33/12
摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.
摘要翻译： 提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。 晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。 当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。
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公开(公告)号：US08003419B2
公开(公告)日：2011-08-23
申请号：US12458900
申请日：2009-07-27
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.
摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。
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公开(公告)号：US20120153252A1
公开(公告)日：2012-06-21
申请号：US13156854
申请日：2011-06-09
申请人： Joo-sung Kim , Taek Kim
发明人： Joo-sung Kim , Taek Kim
IPC分类号： H01L33/06
摘要： A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an AlxGa1-xN(0
摘要翻译： 纳米结构发光器件（LED）包括：第一类型半导体层上的多个纳米结构。 多个纳米结构中的每一个包括：在第一类型半导体层的一部分上的第一类型半导体纳米孔; 形成为覆盖第一类型半导体纳米孔的表面并由Al x Ga 1-x N（0
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公开(公告)号：US08835902B2
公开(公告)日：2014-09-16
申请号：US13156854
申请日：2011-06-09
申请人： Joo-sung Kim , Taek Kim
发明人： Joo-sung Kim , Taek Kim
摘要： A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an AlxGa1-xN(0
摘要翻译： 纳米结构发光器件（LED）包括：第一类型半导体层上的多个纳米结构。 多个纳米结构中的每一个包括：在第一类型半导体层的一部分上的第一类型半导体纳米孔; 形成为覆盖第一类型半导体纳米孔的表面并由Al x Ga 1-x N（0
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8.发明授权Waste disposal device including a diaphragm for twisting a flexible tubing dispensed from a cartridge 有权废物处理装置包括用于扭转从筒分配的柔性管的隔膜公开(公告)号：US08091325B2
公开(公告)日：2012-01-10
申请号：US11237246
申请日：2005-09-28
申请人： David M. Stravitz , Richard S. Chomik , Mark Yoho , Stuart Leslie , Taek Kim , Aidan Petrie , Joe Sejnowski
发明人： David M. Stravitz , Richard S. Chomik , Mark Yoho , Stuart Leslie , Taek Kim , Aidan Petrie , Joe Sejnowski
CPC分类号： B65B7/12 , B65B1/24 , B65B9/15 , B65B67/1277 , B65F1/062 , B65F1/12 , B65F1/1646 , B65F2210/1675 , B65F2230/15 , B65F2240/132
摘要： A diaphragm positioned in a waste disposal device for holding and twisting flexible tubing dispensed form a cartridge housed in the waste disposal device. The twisting of the tubing is accomplished either by rotating the diaphragm and holding the cartridge stationary, or rotating the cartridge and holding the diaphragm. A rotation mechanism is operatively configured to the waste disposal device for rotating either the cartridge or the diaphragm while impeding the rotation of the other. The twisting of the flexible sealably encapsulates a waste package inserted into the flexible tubing through an opening in the cartridge.
摘要翻译： 位于废物处理装置中的隔膜，其用于保持和扭曲从容纳在废物处理装置中的筒体分配的柔性管。 管道的扭转可以通过旋转隔膜并将墨盒固定住，或者旋转墨盒并固定隔膜来完成。 旋转机构可操作地构造成用于在妨碍另一个的旋转的同时旋转盒或隔膜的废物处理装置。 柔性的扭转可密封地封装通过盒中的开口插入柔性管中的废料包装。
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公开(公告)号：US20110095260A1
公开(公告)日：2011-04-28
申请号：US12801275
申请日：2010-06-01
申请人： Taek Kim
发明人： Taek Kim
IPC分类号： H01L33/04
CPC分类号： H01L27/156 , H01L33/08 , H01L33/20
摘要： A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a p-type, and a first active layer provided between the first and second nitride semiconductor layers, and a nano light emitting diode array in which a plurality of nano light emitting diodes may be arranged on the semiconductor light emitting diode so as to be separated from each other.
摘要翻译： 发光器件可以包括半导体发光二极管，其可以包括掺杂为n型的第一氮化物半导体层，以p型掺杂的第二氮化物半导体层，以及设置在第一和第二氮化物之间的第一有源层 半导体层和纳米发光二极管阵列，其中可以在半导体发光二极管上布置多个纳米发光二极管以便彼此分离。
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公开(公告)号：US20100127238A1
公开(公告)日：2010-05-27
申请号：US12457138
申请日：2009-06-02
申请人： Jun-youn Kim , Taek Kim , Kyoung-kook Kim
发明人： Jun-youn Kim , Taek Kim , Kyoung-kook Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/46 , Y10S977/701 , Y10S977/762 , Y10S977/949
摘要： Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.
摘要翻译： 示例性实施例提供了具有改进的偏振特性的发光二极管（LED）。 LED可以包括在发光单元上和下方的线栅偏振器。 线栅偏振器可以彼此成一定角度布置。 因此，由于LED可以在给定的偏振方向上发射光束，所以不需要昂贵的部件，例如双亮度增强膜（DBEF）。 因此，可以减少包括LED的背光单元和包括背光单元的显示装置的制造成本。
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