利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

49 条记录 (耗时 0.038 秒)

    Positive photoresists containing novel photoactive compounds
    1.
    发明授权
    Positive photoresists containing novel photoactive compounds 失效
    含有新型光活性化合物的正性光致抗蚀剂

    公开(公告)号：US5876897A

    公开(公告)日：1999-03-02

    申请号：US812542

    申请日：1997-03-07

    申请人： Dana L. Durham ,  Ping-Hung Lu ,  Joseph E. Oberlander ,  Dinesh N. Khanna

    发明人： Dana L. Durham ,  Ping-Hung Lu ,  Joseph E. Oberlander ,  Dinesh N. Khanna

    IPC分类号： C08K5/00 ,  C08L61/06 ,  C08L101/12 ,  G03F7/004 ,  G03F7/022 ,  G03F7/039 ,  H01L21/027 ,  G03F7/023 ,  G03F7/30

    CPC分类号： G03F7/0045 ,  G03F7/022

    摘要： A light sensitive positive composition comprising an alkali soluble resin, a novel photoactive compound represented by the structure ##STR1## where, X is O, S or N--R', where R' is H, alkyl, substituted alkyl, aryl or aralkyl,Y is a connecting group such as SO.sub.2, CO, O or NR',Z is a carbon containing organic ballast moiety having a molecular weight greater than about 75 and can form a bond with the connecting group,R is independently H, alkyl, alkoxy, aryl, aralkyl, halo or fluoroalkyl,m=1-3, and n.gtoreq.1;and a solvent or mixture of solvents. The invention further comprises a process for imaging the composition of this invention to give positive image. The light sensitive composition is especially useful as a positive deep-uv photoresist.

    摘要翻译： 一种光敏正性组合物，其包含碱溶性树脂，由结构表示的新型光敏化合物，其中X为O，S或N-R'，其中R'为H，烷基，取代的烷基，芳基或芳烷基， Y是连接基团，例如SO 2，CO，O或NR'，Z是分子量大于约75的含碳有机镇流器部分，可与连接基团形成键，R独立地为H，烷基，烷氧基 ，芳基，芳烷基，卤代或氟烷基，m = 1-3，n≥1; 和溶剂或溶剂混合物。 本发明还包括用于对本发明的组合物进行成像以给出正像的方法。 光敏组合物特别适用于正深紫外光致抗蚀剂。

    Photosensitive quinolone compounds and a process of preparation
    2.
    发明授权
    Photosensitive quinolone compounds and a process of preparation 失效
    光敏喹诺酮类化合物及其制备方法

    公开(公告)号：US5866295A

    公开(公告)日：1999-02-02

    申请号：US813167

    申请日：1997-03-07

    申请人： Joseph E. Oberlander ,  Dana L. Durham ,  Dinesh N. Khanna

    发明人： Joseph E. Oberlander ,  Dana L. Durham ,  Dinesh N. Khanna

    IPC分类号： C07D215/38 ,  G03F7/022 ,  G03C1/52 ,  C08G59/00

    CPC分类号： C07D215/38 ,  G03F7/022

    摘要： The present invention relates to novel photosensitive quinolone compounds, specifically novel 3-diazo 2,4-quinolinedione compounds, that may be used in a variety of applications, such as, photosensitive coating compositions, pharmaceuticals, agricultural, amongst others. The invention further relates to a process for making the novel photosensitive 3-diazo 2,4-quinolinedione compounds. These compounds are particularity useful as a photoactive component in a positive working photoresist composition, particularity for use as a deep ultraviolet (UV) photoresist.

    摘要翻译： 本发明涉及可用于各种应用的新型光敏喹诺酮化合物，特别是新颖的3-重氮2,4-喹啉二酮化合物，例如光敏涂料组合物，药物，农业等。 本发明还涉及一种制备新的光敏3-重氮2,4-喹啉二酮化合物的方法。 这些化合物是特别用作正性光致抗蚀剂组合物中的光活性组分，特别用作深紫外（UV）光致抗蚀剂。

    Composition for stripping photoresist and organic materials from substrate surfaces
    3.
    发明授权
    Composition for stripping photoresist and organic materials from substrate surfaces 失效
    用于从基材表面剥离光致抗蚀剂和有机材料的组合物

    公开(公告)号：US06368421B1

    公开(公告)日：2002-04-09

    申请号：US09113892

    申请日：1998-07-10

    申请人： Joseph E. Oberlander ,  Mark S. Slezak ,  Dinesh N. Khanna ,  Dana L. Durham ,  Lawrence F. Spinicelli

    发明人： Joseph E. Oberlander ,  Mark S. Slezak ,  Dinesh N. Khanna ,  Dana L. Durham ,  Lawrence F. Spinicelli

    IPC分类号： B08B304

    CPC分类号： G03F7/426

    摘要： The invention relates to the field of microelectronics, such as integrated circuits, and more particularly to compositions and methods of removing photoresists or other organic materials from the surfaces of substrates used in the fabrication of integrated circuits. In particular the present invention relates to amine-free stripping compositions comprising solvent and surfactant that can effectively remove organic materials without corroding the underlying substrate, and the invention also relates to methods for removing these organic materials with the novel stripping composition.

    摘要翻译： 本发明涉及微电子学领域，例如集成电路，更具体地涉及从用于制造集成电路的衬底表面去除光致抗蚀剂或其它有机材料的组合物和方法。 特别地，本发明涉及不含无溶剂和表面活性剂的无胺汽提组合物，其可有效去除有机材料而不腐蚀下面的基底，本发明还涉及用新的汽提组合物除去这些有机材料的方法。

    Antireflective coating material for photoresists
    4.
    发明授权
    Antireflective coating material for photoresists 失效
    用于光致抗蚀剂的抗反射涂层材料

    公开(公告)号：US6106995A

    公开(公告)日：2000-08-22

    申请号：US373319

    申请日：1999-08-12

    申请人： Sunit S. Dixit ,  M. Dalil Rahman ,  Dinesh N. Khanna ,  Joseph E. Oberlander ,  Dana L. Durham

    发明人： Sunit S. Dixit ,  M. Dalil Rahman ,  Dinesh N. Khanna ,  Joseph E. Oberlander ,  Dana L. Durham

    IPC分类号： G03F7/004 ,  C09D5/00 ,  C09D179/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03C1/492

    CPC分类号： G03F7/091

    摘要： The present invention relates to an antireflective coating composition comprising an admixture of:a) a polymer defined by the following structure: ##STR1## where, R.sub.1 & R.sub.2 are independently hydrogen, or C.sub.1 to C.sub.5 alkylR.sub.3 is a methyl, ethyl, propyl or butyl groupR.sub.4 -R.sub.7 are independently hydrogen, or C.sub.1 to C.sub.5 alkyln=10 to 50,000(b) a fluorine-containing, sparingly water-soluble (0.1%-10% by weight in water) organic C.sub.3 -C.sub.13 aliphatic carboxylic acid;(c) a non-metallic hydroxide; and(d) a solvent.The invention also relates to a method for producing such an antireflective coating composition and to a method for producing a microelectronic device using such an antireflective coating composition in conjunction with a photoresist composition.

    摘要翻译： 本发明涉及一种抗反射涂料组合物，其包含以下混合物的混合物：a）由以下结构定义的聚合物：其中R1和R2独立地为氢，或C1至C5烷基，R3为甲基，乙基，丙基或丁基R4 -R7独立地为氢，或C 1至C 5烷基n = 10至50,000（b）含氟的微水溶性（0.1重量％-10重量％的水）有机C 3 -C 13脂族羧酸; （c）非金属氢氧化物; 和（d）溶剂。 本发明还涉及一种制备这种抗反射涂料组合物的方法和一种使用这种抗反射涂料组合物与光致抗蚀剂组合物一起生产微电子器件的方法。

    Process of making a stable solution of poly(hydroxystyrene) functionalized with t-butyloxycarbonyl groups
    10.
    发明授权
    Process of making a stable solution of poly(hydroxystyrene) functionalized with t-butyloxycarbonyl groups 失效
    制备用叔丁氧基羰基官能化的聚（羟基苯乙烯）稳定溶液的方法

    公开(公告)号：US5395871A

    公开(公告)日：1995-03-07

    申请号：US239096

    申请日：1994-05-06

    申请人： Dinesh N. Khanna

    发明人： Dinesh N. Khanna

    IPC分类号： C08F12/22 ,  C08J3/09 ,  C08L25/08 ,  C08L25/18 ,  C08K5/06 ,  C08F18/24 ,  C08K5/10 ,  C08L69/00

    CPC分类号： C08J3/09 ,  C08F12/22 ,  C08J2325/18

    摘要： Poly(hydroxystyrene) resins in which a portion of the hydroxyl groups are functionalized with t-butyloxycarbonyl groups ("t-Boc") tend to decompose during drying of the wet solid and on storage in the solid state. Solutions that are more stable than the solid material can be made from the wet freshly synthesized solid by dissolving the wet solid in a solvent that forms an azeotrope with water and then distilling the azeotrope of water and solvent from the solution until the solution contains less than about 1% by weight of water.

    摘要翻译： 其中一部分羟基被叔丁氧基羰基（“t-Boc”）官能化的聚（羟基苯乙烯）树脂在湿固体的干燥期间倾向于分解并在固体状态下储存。 比固体材料更稳定的溶液可以通过将湿固体溶解在与水形成共沸物的溶剂中，然后从溶液中蒸馏出水和溶剂的共沸物，直到溶液含有少于 约1重量％的水。