-
1.发明授权Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same 有权具有减小漏电流的电介质层的电容器及其制造方法公开(公告)号：US07352022B2
公开(公告)日：2008-04-01
申请号：US11207740
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
发明人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
IPC分类号： H01L27/108
摘要： A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition metal may be titanium and the composite oxide may be nitrided. The method may include providing a precursor of a transition metal, providing a precursor of a lanthanide group element, and forming a composite oxide on the lower electrode by oxidizing both the precursor of the transition metal and the precursor of the lanthanide group element, the composite oxide containing the transition metal and the lanthanide group element.
摘要翻译： 提供具有包括复合氧化物的电介质层的电容器，包含过渡金属并且包括镧系元素元素的复合氧化物，包括其的存储装置和制造电容器的方法。 过渡金属可以是钛，并且复合氧化物可以被氮化。 该方法可以包括提供过渡金属的前体，提供镧系元素元素的前体，以及通过氧化过渡金属的前体和镧系元素前体的复合氧化物，形成复合氧化物，复合材料 含有过渡金属和镧系元素的氧化物。
-
2.发明申请Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same 有权具有减小漏电流的电介质层的电容器及其制造方法公开(公告)号：US20060040445A1
公开(公告)日：2006-02-23
申请号：US11207740
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
发明人： Jung-hyun Lee , Sung-ho Park , Bum-seok Seo
IPC分类号： H01L21/8242
摘要： A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition metal may be titanium and the composite oxide may be nitrided. The method may include providing a precursor of a transition metal, providing a precursor of a lanthanide group element, and forming a composite oxide on the lower electrode by oxidizing both the precursor of the transition metal and the precursor of the lanthanide group element, the composite oxide containing the transition metal and the lanthanide group element.
摘要翻译： 提供具有包括复合氧化物的电介质层的电容器，包含过渡金属并且包括镧系元素元素的复合氧化物，包括其的存储装置和制造电容器的方法。 过渡金属可以是钛，并且复合氧化物可以被氮化。 该方法可以包括提供过渡金属的前体，提供镧系元素元素的前体，以及通过氧化过渡金属的前体和镧系元素前体的复合氧化物，形成复合氧化物，复合材料 含有过渡金属和镧系元素的氧化物。
-
3.发明授权Method of forming carbon fibers using metal-organic chemical vapor deposition 有权使用金属有机化学气相沉积法形成碳纤维的方法公开(公告)号：US07691441B2
公开(公告)日：2010-04-06
申请号：US11550121
申请日：2006-10-17
申请人： Sung-ho Park , Myoung-jae Lee , June-mo Koo , Bum-seok Seo
发明人： Sung-ho Park , Myoung-jae Lee , June-mo Koo , Bum-seok Seo
IPC分类号： C23C16/00
CPC分类号： C23C16/26 , B82Y10/00 , B82Y30/00 , D01F9/127 , H01J9/025 , H01J2201/30469 , H01J2329/00 , Y10T428/2918
摘要： A method of forming carbon fibers at a low temperature below 450° C. using an organic-metal evaporation method is provided. The method includes: heating a substrate and maintaining the substrate at a temperature of 200 to 450° C. after loading the substrate into a reaction chamber; preparing an organic-metal compound containing Ni; forming an organic-metal compound vapor by vaporizing the organic-metal compound; and forming carbon fibers on the substrate by facilitating a chemical reaction between the organic-metal compound vapor and a reaction gas containing ozone in the reaction chamber.
摘要翻译： 提供了使用有机金属蒸发法在低于450℃的低温下形成碳纤维的方法。 该方法包括：将基板加载到反应室中之后，加热基板并将基板保持在200至450℃的温度; 制备含有Ni的有机金属化合物; 通过蒸发有机金属化合物形成有机金属化合物蒸气; 以及通过促进有机金属化合物蒸气和在反应室中含有臭氧的反应气体之间的化学反应，在基板上形成碳纤维。
-
4.发明申请Nonvolatile capacitor of a semiconductor device, semiconductor memory device including the capacitor, and method of operating the same 审中-公开半导体器件的非易失性电容器，包括该电容器的半导体存储器件及其操作方法公开(公告)号：US20050194622A1
公开(公告)日：2005-09-08
申请号：US11013923
申请日：2004-12-17
申请人： Jung-hyun Lee , Sung-ho Park , Myoung-jae Lee , Young-soo Park
发明人： Jung-hyun Lee , Sung-ho Park , Myoung-jae Lee , Young-soo Park
IPC分类号： H01L27/10 , G11C16/02 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L27/22 , H01L29/92 , H01L45/00 , H01L49/02 , H01L21/20 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y10/00 , G11C13/0004 , H01L27/10852 , H01L27/112 , H01L27/115 , H01L27/2436 , H01L28/40 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： In a capacitor of a semiconductor device, a semiconductor memory device including the capacitor, and a method of operating the semiconductor memory device, the capacitor includes a lower electrode, a dielectric layer stacked on the lower electrode, the dielectric layer including a phase-transition layer capable of exhibiting two different resistance characteristics depending on whether an insulating property thereof has been changed, and an upper electrode stacked on the dielectric layer.
摘要翻译： 在半导体器件的电容器中，包括电容器的半导体存储器件以及半导体存储器件的操作方法，电容器包括下电极，堆叠在下电极上的电介质层，电介质层包括相转变 层，其能够根据其绝缘性是否变化而呈现出两种不同的电阻特性，以及堆叠在电介质层上的上电极。
-
公开(公告)号：US20050145916A1
公开(公告)日：2005-07-07
申请号：US11011479
申请日：2004-12-15
申请人： Sung-ho Park , Jung-hyun Lee
发明人： Sung-ho Park , Jung-hyun Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L21/316 , H01L21/82 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L28/65 , H01L21/31604 , H01L21/31637 , H01L27/1085 , H01L28/75
摘要： A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor device, include a lower electrode layer, a dielectric layer, and an upper electrode layer, wherein the dielectric layer includes tantalum (Ta) oxide and an oxide of a Group 5 element, such as niobium (Nb) or vanadium (V).
摘要翻译： 半导体器件的电容器和制造半导体器件的电容器的方法包括下电极层，电介质层和上电极层，其中电介质层包括氧化钽（Ta）和氧化物 第5族元素，如铌（Nb）或钒（V）。
-
6.发明申请Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device 审中-公开锑前体，使用锑前驱体的相变记忆体装置以及相变存储装置的制造方法公开(公告)号：US20060049447A1
公开(公告)日：2006-03-09
申请号：US11219805
申请日：2005-09-07
申请人： Jung-hyun Lee , Young-soo Park , Sung-ho Park
发明人： Jung-hyun Lee , Young-soo Park , Sung-ho Park
IPC分类号： H01L29/76
CPC分类号： C07F9/902 , C23C16/18 , C23C16/45531 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616
摘要： An antimony precursor including antimony, nitrogen and silicon, a phase-change memory device using the same, and a method of making the phase-change memory device. The phase-change memory device may have a phase-change film of a Ge2—Sb2—Te5 material including nitrogen and silicon.
摘要翻译： 包括锑，氮和硅的锑前体，使用该锑前体的相变存储器件以及制造该相变存储器件的方法。 相变存储器件可以具有包括氮和硅的Ge 2 -Sb 2 -Te 5-5材料的相变膜。
-
公开(公告)号：US20060040444A1
公开(公告)日：2006-02-23
申请号：US11207711
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
发明人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
IPC分类号： H01L21/8244
摘要： A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
摘要翻译： 本文提供电容器和制造电容器的方法。 可以通过形成两个或更多个电介质层和下电极来形成电容器，其中在形成下电极之前形成两个或更多个电介质层中的至少一个。
-
公开(公告)号：US08159016B2
公开(公告)日：2012-04-17
申请号：US11011479
申请日：2004-12-15
申请人： Sung-ho Park , Jung-hyun Lee
发明人： Sung-ho Park , Jung-hyun Lee
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L21/31604 , H01L21/31637 , H01L27/1085 , H01L28/75
摘要： A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor device, include a lower electrode layer, a dielectric layer, and an upper electrode layer, wherein the dielectric layer includes tantalum (Ta) oxide and an oxide of a Group 5 element, such as niobium (Nb) or vanadium (V).
摘要翻译： 半导体器件的电容器和制造半导体器件的电容器的方法包括下电极层，电介质层和上电极层，其中电介质层包括氧化钽（Ta）和氧化物 第5族元素，如铌（Nb）或钒（V）。
-
公开(公告)号：US07888231B2
公开(公告)日：2011-02-15
申请号：US12662609
申请日：2010-04-26
申请人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
发明人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
IPC分类号： H01L21/20
摘要： A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
摘要翻译： 本文提供电容器和制造电容器的方法。 可以通过形成两个或更多个介电层和下电极来形成电容器，其中在形成下电极之前形成两个或更多个电介质层中的至少一个。
-
公开(公告)号：US20100221411A1
公开(公告)日：2010-09-02
申请号：US12662609
申请日：2010-04-26
申请人： Jung-hyun Lee , Sung-ho Park , Sang-jun Chol
发明人： Jung-hyun Lee , Sung-ho Park , Sang-jun Chol
IPC分类号： H01G9/00
摘要： A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
-
-
-
-
-
-
-
-
-
搜索结果
59 条记录 (耗时 0.024 秒)
