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304 条记录 (耗时 0.042 秒)

    Semiconductor circuit preventing electromagnetic noise
    1.
    发明授权
    Semiconductor circuit preventing electromagnetic noise 失效
    半导体电路防止电磁噪声

    公开(公告)号：US06414370B1

    公开(公告)日：2002-07-02

    申请号：US09639801

    申请日：2000-08-17

    申请人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

    发明人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

    IPC分类号： H01L27082

    CPC分类号： H01L29/866 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7393 ,  H01L29/7395 ,  H03K17/08148 ,  H03K17/0828

    摘要： A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.

    摘要翻译： 半导体电路或半导体器件具有电流 - 电压特性，在半导体电路或半导体器件的阻挡状态下，电流缓慢地流过等于或大于第一电压值但等于或等于 或小于第二电压值，而电流突然流过大于第二电压值的电压值。 由于电流 - 电压特性，在电路内提供的电感中积累的能量被半导体电路或半导体的差分电阻消耗，从而防止电磁噪声的发生和过大的电压。

    Semiconductor thyristor switching device and power converter using same
    5.
    发明授权
    Semiconductor thyristor switching device and power converter using same 失效
    半导体晶闸管开关器件和功率转换器使用相同

    公开(公告)号：US5831293A

    公开(公告)日：1998-11-03

    申请号：US709451

    申请日：1996-09-06

    申请人： Tetsuo Mizoguchi ,  Masahiro Nagasu ,  Hideo Kobayashi ,  Tsutomu Yatsuo

    发明人： Tetsuo Mizoguchi ,  Masahiro Nagasu ,  Hideo Kobayashi ,  Tsutomu Yatsuo

    IPC分类号： H01L29/744 ,  H01L29/74 ,  H01L31/111

    CPC分类号： H01L29/744

    摘要： There is provided a semiconductor substrate which includes a pair of main surfaces, a first semiconductor layer of a first conductivity type adjacent to one of the main surface, a second semiconductor layer of a second conducting type of which impurity concentration is lower than that of the first semiconductor layer and which is adjacent to the first semiconductivity, a third semiconductor layer of the first conductivity type adjacent to the second semiconductor, and a fourth semiconductor of the second conductivity type of which impurity concentration is higher than that of the third semiconductor and which is adjacent to the other of the main surfaces and the third semiconductor. The device further includes one main electrode in ohmic-contact with the first semiconductor layer on one of the main surfaces of said semiconductor substrate, the other main electrode in ohmic-contact with the first semiconductor layer on the other of the main surfaces of said semiconductor substrate, and a control electrode connected electrically to the third semiconductor layer. The total amount of impurities of said third semiconductor layer is less than 10.sup.14 cm.sup.-2.

    摘要翻译： 提供了一种半导体衬底，其包括一对主表面，与主表面之一相邻的第一导电类型的第一半导体层，杂质浓度低于第二导电类型的第二导电类型的第二半导体层 第一半导体层，其与第一半导体层相邻，第一导电类型与第二半导体相邻的第三半导体层以及杂质浓度高于第三半导体的第二导电类型的第四半导体， 与另一个主表面和第三半导体相邻。 所述器件还包括与所述半导体衬底的一个主表面上的第一半导体层欧姆接触的一个主电极，与所述半导体衬底的另一主表面上的第一半导体层欧姆接触的另一个主电极 基板和与第三半导体层电连接的控制电极。 所述第三半导体层的杂质总量小于1014cm-2。

    Semiconductor device having planar junction
    6.
    发明授权
    Semiconductor device having planar junction 失效
    具有平面结的半导体器件

    公开(公告)号：US5804868A

    公开(公告)日：1998-09-08

    申请号：US600459

    申请日：1996-02-13

    申请人： Hideo Kobayashi ,  Mutsuhiro Mori ,  Yasumichi Yasuda ,  Yasunori Nakano

    发明人： Hideo Kobayashi ,  Mutsuhiro Mori ,  Yasumichi Yasuda ,  Yasunori Nakano

    IPC分类号： H01L29/78 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/06 ,  H01L29/40 ,  H01L29/73 ,  H01L29/732 ,  H01L29/74 ,  H01L29/861 ,  H02P27/06 ,  H01L23/58

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/404 ,  H01L29/408 ,  H02P27/06 ,  H01L2924/0002

    摘要： A highly reliable semiconductor device having a planar junction, which comprises a main junction and a plurality of field limiting ring regions surrounding the main junction, and an electrically floating conductive layer to completely cover that part of the surface of an n.sup.- layer between the main junction and the nearest field limiting ring region thereto through an insulating layer to suppress influences by external factors such as charged particles, etc. In accordance with such a structured device, when a voltage for making the main junction into a reverse bias state is applied, the potential of the conductive layer becomes fixed to an intermediate potential between the main junction and the nearest field limiting ring region thereto and plays a role of shield effect. In fact, even if the device is incorporated into a resin-sealed package and subjected to reliability tests (high temperature DC reverse bias tests), the breakdown voltage is not changed at all. Also, rather than effecting a device in which the conductive layer is electrically floating, the conductive layer which covers an overlying area between the main junction and the nearest field limiting ring region thereto can be electrically connected to the nearest field limiting ring.

    摘要翻译： 具有平面结的高度可靠的半导体器件，其包括主结和围绕主结的多个场限制环区域，以及电浮动导电层，以完全覆盖主层之间的n层表面的那部分 并且通过绝缘层向其最近的限界环区域，以抑制外部因素如带电粒子等的影响。根据这种结构化器件，当施加用于使主结点成为反向偏置状态的电压时， 导电层的电位固定在主结点与其最近的限界环区之间的中间电位，起到屏蔽作用。 事实上，即使将该器件并入树脂密封封装并进行可靠性测试（高温直流反向偏压测试），也完全不会发生击穿电压的变化。 此外，不是实现其中导电层电浮置的器件，覆盖主结和其最近的限界环区之间的覆盖区域的导电层可以电连接到最近的场限制环。

    Substituted imidazo[1,5-A]quinoxalines as phosphodiesterase 9 inhibitors
    9.
    发明授权
    Substituted imidazo[1,5-A]quinoxalines as phosphodiesterase 9 inhibitors 有权
    取代的咪唑并[1,5-A]喹喔啉，为磷酸二酯酶9抑制剂

    公开(公告)号：US08829000B2

    公开(公告)日：2014-09-09

    申请号：US13617683

    申请日：2012-09-14

    申请人： Makoto Okada ,  Shuichiro Sato ,  Kenji Kawade ,  Kotaro Gotanda ,  Atsushi Shinbo ,  Youichi Nakano ,  Hideo Kobayashi

    发明人： Makoto Okada ,  Shuichiro Sato ,  Kenji Kawade ,  Kotaro Gotanda ,  Atsushi Shinbo ,  Youichi Nakano ,  Hideo Kobayashi

    IPC分类号： A61K31/4985 ,  C07D487/04 ,  C07D487/14

    CPC分类号： C07D487/04 ,  C07D487/14

    摘要： The invention discloses quinoxaline derivatives or salts thereof having PDE9-inhibiting activity and being useful as treating agent of dysuria and the like, which are represented by the formula (I) in the formula, R1 and R2 each independently stands for hydrogen, halogen, alkyl, alkoxy, acyl, amino and the like, R3 stands for alkyl, aryl, saturated carbocyclic group, saturated heterocyclic group, acyl and the like, R4 stands for hydrogen, hydroxy, alkyl or amino, R5 and R8 each independently stands for hydrogen, halogen, alkyl, alkenyl, alkoxy, cyano or nitro, R6 and R7 each independently stands for hydrogen, halogen, alkyl, alkenyl, alkynyl, alkoxy, cyano, amino, carbocyclic group, heterocyclic group, COR9 or SO2R9, R9 stands for hydrogen, hydroxy, alkyl, amino, pyrrolidin-1-yl, piperidin-1-yl, pyperazin-1-yl or the like, X stands for S or O, and A1, A2 and A3 each independently stands for N or C.

    摘要翻译： 本发明公开了具有PDE9抑制活性的喹喔啉衍生物或其盐，可用作式（I）所示的排尿困难等的治疗剂，R 1和R 2各自独立地表示氢，卤素，烷基 烷氧基，酰基，氨基等，R3代表烷基，芳基，饱和碳环基，饱和杂环基，酰基等，R4代表氢，羟基，烷基或氨基，R5和R8各自独立代表氢， 卤素，烷基，烯基，烷氧基，氰基或硝基，R6和R7各自独立地代表氢，卤素，烷基，烯基，炔基，烷氧基，氰基，氨基，碳环基，杂环基，COR9或SO2R9，R9代表氢， 羟基，烷基，氨基，吡咯烷-1-基，哌啶-1-基，哒嗪-1-基等，X表示S或O，并且，A1，A2和A3各自独立地表示N或C.

    Hydraulic control device for engine
    10.
    发明授权
    Hydraulic control device for engine 有权
    发动机液压控制装置

    公开(公告)号：US08683963B2

    公开(公告)日：2014-04-01

    申请号：US13376880

    申请日：2009-06-08

    申请人： Hideo Kobayashi ,  Toshihisa Sugiyama ,  Kenichi Yamada ,  Shusaku Sugamoto ,  Bunki Kawano

    发明人： Hideo Kobayashi ,  Toshihisa Sugiyama ,  Kenichi Yamada ,  Shusaku Sugamoto ,  Bunki Kawano

    IPC分类号： F01P1/04

    CPC分类号： F01M1/16 ,  F01M1/08 ,  F01P3/06

    摘要： A hydraulic control device is equipped with an oil jet that injects oil to a piston, an oil gallery through which oil injected by the oil jet and oil supplied to a lubrication part of an engine pass, an oil pump that pumps oil to the oil gallery, and a switching valve that is provided on an oil jet passage connecting the oil gallery and the oil jet together and leads oil supplied from the oil gallery to either the oil jet or an oil pan disposed at an upstream side of the oil pump. An ECU controls the switching valve on the basis of an engine speed and an engine cooling water temperature.

    摘要翻译： 液压控制装置配备有将油喷射到活塞的油喷射器，通过油喷射的油被供应到发动机通过的润滑部分的油的油库，将油泵送到油库的油泵 以及切换阀，其设置在将油路和油喷射连接在一起的油喷射通路上，并将从油路供给的油引导到设置在油泵的上游侧的油喷射或油盘。 ECU根据发动机转速和发动机冷却水温度控制切换阀。