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34 条记录 (耗时 0.025 秒)

    Semiconductor circuit preventing electromagnetic noise
    1.
    发明授权
    Semiconductor circuit preventing electromagnetic noise 失效
    半导体电路防止电磁噪声

    公开(公告)号：US06414370B1

    公开(公告)日：2002-07-02

    申请号：US09639801

    申请日：2000-08-17

    申请人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

    发明人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

    IPC分类号： H01L27082

    CPC分类号： H01L29/866 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7393 ,  H01L29/7395 ,  H03K17/08148 ,  H03K17/0828

    摘要： A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.

    摘要翻译： 半导体电路或半导体器件具有电流 - 电压特性，在半导体电路或半导体器件的阻挡状态下，电流缓慢地流过等于或大于第一电压值但等于或等于 或小于第二电压值，而电流突然流过大于第二电压值的电压值。 由于电流 - 电压特性，在电路内提供的电感中积累的能量被半导体电路或半导体的差分电阻消耗，从而防止电磁噪声的发生和过大的电压。

    Semiconductor thyristor switching device and power converter using same
    6.
    发明授权
    Semiconductor thyristor switching device and power converter using same 失效
    半导体晶闸管开关器件和功率转换器使用相同

    公开(公告)号：US5831293A

    公开(公告)日：1998-11-03

    申请号：US709451

    申请日：1996-09-06

    申请人： Tetsuo Mizoguchi ,  Masahiro Nagasu ,  Hideo Kobayashi ,  Tsutomu Yatsuo

    发明人： Tetsuo Mizoguchi ,  Masahiro Nagasu ,  Hideo Kobayashi ,  Tsutomu Yatsuo

    IPC分类号： H01L29/744 ,  H01L29/74 ,  H01L31/111

    CPC分类号： H01L29/744

    摘要： There is provided a semiconductor substrate which includes a pair of main surfaces, a first semiconductor layer of a first conductivity type adjacent to one of the main surface, a second semiconductor layer of a second conducting type of which impurity concentration is lower than that of the first semiconductor layer and which is adjacent to the first semiconductivity, a third semiconductor layer of the first conductivity type adjacent to the second semiconductor, and a fourth semiconductor of the second conductivity type of which impurity concentration is higher than that of the third semiconductor and which is adjacent to the other of the main surfaces and the third semiconductor. The device further includes one main electrode in ohmic-contact with the first semiconductor layer on one of the main surfaces of said semiconductor substrate, the other main electrode in ohmic-contact with the first semiconductor layer on the other of the main surfaces of said semiconductor substrate, and a control electrode connected electrically to the third semiconductor layer. The total amount of impurities of said third semiconductor layer is less than 10.sup.14 cm.sup.-2.

    摘要翻译： 提供了一种半导体衬底，其包括一对主表面，与主表面之一相邻的第一导电类型的第一半导体层，杂质浓度低于第二导电类型的第二导电类型的第二半导体层 第一半导体层，其与第一半导体层相邻，第一导电类型与第二半导体相邻的第三半导体层以及杂质浓度高于第三半导体的第二导电类型的第四半导体， 与另一个主表面和第三半导体相邻。 所述器件还包括与所述半导体衬底的一个主表面上的第一半导体层欧姆接触的一个主电极，与所述半导体衬底的另一主表面上的第一半导体层欧姆接触的另一个主电极 基板和与第三半导体层电连接的控制电极。 所述第三半导体层的杂质总量小于1014cm-2。

    Gate drive circuit with reduced switching loss and noise
    9.
    发明授权
    Gate drive circuit with reduced switching loss and noise 失效
    栅极驱动电路具有降低的开关损耗和噪声

    公开(公告)号：US07737761B2

    公开(公告)日：2010-06-15

    申请号：US12019032

    申请日：2008-01-24

    申请人： Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

    发明人： Katsumi Ishikawa ,  Masahiro Nagasu ,  Dai Tsugawa

    IPC分类号： H03K17/16 ,  H03K17/30

    CPC分类号： H03K17/567 ,  H03K17/163 ,  H03K17/168 ,  H03K2217/0036

    摘要： A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

    摘要翻译： 本发明的目的是减少振荡等引起的噪声，同时降低元件的导通功率损耗并且在具有小恢复的SiC二极管的功率半导体元件的开关电路中的二极管的反向恢复损耗 电流并联。 解决该问题的手段是基于检测值来检测功率半导体开关元件的栅极电压和/或集电极电压并且以几个阶段改变栅极驱动电压。