摘要:
A system and a method for determining a delay time interval of components are provided. The system includes a delay chain of components having a plurality of components wherein each component of the delay chain of components has a first delay time interval. The system utilizes a reference clock signal to stimulate the delay change of components and monitors a delay clock signal output by the delay chain of components to determine a delay time interval associated with each component in the delay chain of components.
摘要:
A device and method for self-testing an integrated circuit layer for a three-dimensional integrated circuit includes integrally forming a disposable self-test circuit on a common substrate with a first circuit to be tested. The first circuit forms a layer in a three-dimensional integrated circuit structure. The first circuit is tested using circuitry of the self-test circuit. The self-test circuit is removed by detaching the self-test circuit from the first circuit.
摘要:
A device and method for self-testing an integrated circuit layer for a three-dimensional integrated circuit includes integrally forming a disposable self-test circuit on a common substrate with a first circuit to be tested. The first circuit forms a layer in a three-dimensional integrated circuit structure. The first circuit is tested using circuitry of the self-test circuit. The self-test circuit is removed by detaching the self-test circuit from the first circuit.
摘要:
A system and a method for determining a delay time interval of components are provided. The system includes a delay chain of components having a plurality of components wherein each component of the delay chain of components has a first delay time interval. The system utilizes a reference clock signal to stimulate the delay change of components and monitors a delay clock signal output by the delay chain of components to determine a delay time interval associated with each component in the delay chain of components.
摘要:
A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.
摘要:
Mechanisms are provided for either power gating or bypassing a voltage regulator. Responsive to receiving an asserted power gate signal to power gate the output voltage of the voltage regulator, at least one of first control circuitry power gates the output voltage of a first circuit or second control circuitry power gates the output voltage of a second circuit such that substantially no voltage to is output by the first circuit to a primary output node. Responsive to receiving an asserted bypass signal to bypass the output voltage of the voltage regulator, at least one of the first control circuitry bypasses the output voltage of the first circuit or the second control circuitry bypasses the output voltage of a second circuit such that substantially the voltage of a voltage source is output by the first circuit to the primary output node.
摘要:
A high-density deep trench capacitor array with a plurality of leakage sensors and switch devices. Each capacitor array further comprises a plurality of sub-arrays, wherein the leakage in each sub-array is independently controlled by a sensor and switch unit. The leakage sensor comprises a current mirror, a transimpedance amplifier, a voltage comparator, and a timer. If excessive leakage current is detected, the switch unit will automatically disconnect the leaky capacitor module to reduce stand-by power and improve yield. An optional solid-state resistor can be formed on top of the deep trench capacitor array to increase the temperature and speed up the leakage screening process.
摘要:
A voltage regulator module (VRM) includes a first interface configured to couple to a first substrate interface at a first voltage. The VRM also includes a second interface configured to couple to a first processor interface at a second voltage. A first regulator module couples to the first interface and to the second interface. The first regulator module is configured to receive power at the first interface, to convert power to the second voltage, and to deliver power to the first processor interface at the second voltage. A method for providing power to a processor includes receiving power from a first substrate interface at a first voltage. The received power is regulated to generate power at a second voltage. The regulated power is provided to a processor at a first processor interface coupled to the processor. The processor interface delivers power to a logic group of a plurality of logic groups of the processor.
摘要:
A method for regulating a voltage using a linear voltage regulator is provided. The linear voltage regulator has a first circuit with a primary output node and a second circuit having first and second inverters electrically coupled to the primary output node. The method includes receiving a first voltage from a voltage source at the first circuit. The method further includes removing frequency components of the first voltage in a first frequency range to obtain an output voltage at the primary output node utilizing the first circuit. The method further includes removing frequency components of the output voltage in a second frequency range utilizing the first and second inverters of the second circuit, the second frequency range being greater than the first frequency range.
摘要:
Embodiments of the present invention provide a device comprising a plurality of phase change memory cells, a word line, and a plurality of bit lines. Each phase change memory cell is coupled to a corresponding transistor. Each transistor is coupled to the word line. Each bit line is coupled to a phase change memory cell of the device. The device further comprises a programming circuit configured to program at least one phase change memory cell to the SET state by selectively applying a two-stage waveform to the word line and the bit lines of the device. In a first stage, a first predetermined low voltage and a first predetermined high voltage are applied at the word line and the bit lines, respectively. In a second stage, a second predetermined high voltage and a predetermined voltage with decreasing amplitude are applied at the word line and the bit lines, respectively.