公开(公告)号：US5536950A

公开(公告)日：1996-07-16

申请号：US331315

申请日：1994-10-28

申请人： Michael S. Liu ,  Ka-Lun Lo ,  Kalluri R. Sarma

发明人： Michael S. Liu ,  Ka-Lun Lo ,  Kalluri R. Sarma

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： H01L29/78615 ,  H01L27/1214

摘要： A transistor panel used for active matrix display devices includes islands of single crystal silicon formed on a transparent quartz substrate and arranged in rows and columns, with an NMOS transistor formed in each island. Each transistor includes source, drain and channel regions and an isolated pixel reference voltage region. A silicon body tie connects the channel region to the pixel reference voltage region and acts as a current sink for unwanted carriers thereby greatly increasing the snapback voltage. A metallization extends to each transistor and is in contact with each reference voltage region to form a body tie buss. The portion of the body tie that overlaps the pixel electrode may be sized to provide a storage capacitor for improved display performance. The unique body tie design obviates the need for a separate light shield layer, provides a dramatically increased aperture ratio and is compatible with normal high temperature silicon processes.

摘要翻译： 用于有源矩阵显示装置的晶体管面板包括形成在透明石英衬底上的单晶硅岛，并以行和列排列，每个岛形成NMOS晶体管。 每个晶体管包括源极，漏极和沟道区域以及孤立的像素参考电压区域。 硅体接头将通道区域连接到像素参考电压区域，并且用作不需要的载流子的电流吸收器，从而大大增加了回跳电压。 金属化延伸到每个晶体管并且与每个参考电压区域接触以形成主体连接总线。 与像素电极重叠的身体束带的部分可以被设计成提供用于改善显示性能的存储电容器。 独特的身体搭配设计避免了单独的遮光层的需要，提供了显着增加的开口率，并且与普通的高温硅工艺兼容。

公开(公告)号：US5659192A

公开(公告)日：1997-08-19

申请号：US791354

申请日：1997-01-27

申请人： Kalluri R. Sarma ,  Michael S. Liu

发明人： Kalluri R. Sarma ,  Michael S. Liu

IPC分类号： H01L21/20 ,  H01L21/762 ,  H01L27/01 ,  H01L27/12 ,  H01L29/04 ,  H01L31/0392

CPC分类号： H01L21/76256 ,  H01L21/2007 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76289

摘要： A back-etch silicon-on-insulator SOI process that has a silicon handle wafer with an oxide layer bonded at room temperature to a silicon device wafer with an etch stop and silicon device layer. The surfaces that are bonded at room temperature are first conditioned to be hydrophilic. After bonding, the edges of the layers are sealed. The silicon device wafer, the etch-stop layer and the device layer are boron doped. Most of the silicon device wafer is ground away. Then, the remaining portion of the silicon device wafer and the etch stop layer are chemically etched away, thereby leaving a uniform layer of silicon device layer on the oxide layer of the silicon handle wafer. Because the bonding, grinding and selective etching are performed at room temperature, inter-diffusion of the boron between the various layers is prevented and thus permits the selective etching process to result in a nearly perfect silicon device layer in terms of an even-surfaced, defect-free and thin layer on the buried oxide layer of silicon handle wafer. The resulting SOI wafer is then annealed at a high temperature, prior to device processing.

摘要翻译： 背面蚀刻绝缘体上硅SOI工艺，其具有硅处理晶片，其氧化物层在室温下与蚀刻停止和硅器件层结合到硅器件晶片。 首先将在室温下结合的表面调节为亲水性。 粘合后，层的边缘被密封。 硅器件晶片，蚀刻停止层和器件层是硼掺杂的。 大多数硅器件晶片被磨掉。 然后，硅器件晶片和蚀刻停止层的剩余部分被化学蚀刻掉，从而在硅处理晶片的氧化物层上留下均匀的硅器件层层。 由于在室温下进行接合，研磨和选择性蚀刻，因此可以防止各层之间的硼的相互扩散，从而允许选择性蚀刻工艺在均匀表面， 在硅处理晶圆的掩埋氧化层上的无缺陷和薄层。 然后在器件处理之前，将所得的SOI晶片在高温下退火。

公开(公告)号：US20110242658A1

公开(公告)日：2011-10-06

申请号：US12753964

申请日：2010-04-05

申请人： Kalluri R. Sarma

发明人： Kalluri R. Sarma

IPC分类号： G02B5/00 ,  B05D5/06 ,  B29D11/00 ,  B32B3/10

CPC分类号： G06F3/041 ,  Y10T428/24802 ,  Y10T428/24926

摘要： Methods and apparatus are provided for forming a smudge-resistant film structure that comprises a plurality of transparent inorganic surface structures overlying a transparent substrate. A method for forming the film structure comprises providing a transparent substrate and forming a plurality of transparent surface structures overlying the transparent substrate, wherein each of the transparent surface structures comprises an inorganic material.

摘要翻译： 提供了用于形成防透光膜结构的方法和装置，其包括覆盖在透明基板上的多个透明无机表面结构。 一种形成薄膜结构的方法包括提供透明基底并形成覆盖透明基底的多个透明表面结构，其中每个透明表面结构都包括无机材料。

公开(公告)号：US20090179848A1

公开(公告)日：2009-07-16

申请号：US11972199

申请日：2008-01-10

申请人： John Schmidt ,  Kalluri R. Sarma ,  Dennis M. Davey

发明人： John Schmidt ,  Kalluri R. Sarma ,  Dennis M. Davey

IPC分类号： G09G3/36 ,  H04N5/66

CPC分类号： G09G3/3413 ,  G09G3/2081 ,  G09G3/3426 ,  G09G2310/0235 ,  G09G2320/041 ,  G09G2320/064

摘要： Methods and systems for displaying an image on a display device having first and second light sources are provided. A video signal is provided to the display device. The video signal includes first and second video frames. Each video frame includes first and second sub-frames corresponding to the respective first and second light sources. The first light source is operated for a first duration during the first sub-frame of the first video frame. The first light source is operated for a second duration during the first sub-frame of the second video frame. The second duration is different from the first duration.

摘要翻译： 提供了用于在具有第一和第二光源的显示装置上显示图像的方法和系统。 视频信号被提供给显示装置。 视频信号包括第一和第二视频帧。 每个视频帧包括对应于相应的第一和第二光源的第一和第二子帧。 第一光源在第一视频帧的第一子帧期间操作第一持续时间。 第一光源在第二视频帧的第一子帧期间操作第二持续时间。 第二个持续时间与第一个持续时间不同。

公开(公告)号：US07316942B2

公开(公告)日：2008-01-08

申请号：US11058062

申请日：2005-02-14

申请人： Kalluri R. Sarma ,  Charles Chanley

发明人： Kalluri R. Sarma ,  Charles Chanley

IPC分类号： H01L21/00

CPC分类号： H01L27/1218 ,  G02F1/133305 ,  G02F1/13439 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78603

摘要： An active matrix display backplane is formed by annealing a flexible dielectric substrate, and then forming one or more thin-film-transistors (TFTs), one or more pixel electrodes, and an interconnect on a surface of the annealed substrate. The interconnect includes individual, spaced apart electrodes that are electrically coupled to one another. One of the interconnect electrodes is electrically coupled to a TFT, and the other interconnect electrode is electrically coupled to the pixel electrode, to thereby electrically interconnect the TFT and the pixel electrode.

摘要翻译： 通过退火柔性电介质基板，然后在退火基板的表面上形成一个或多个薄膜晶体管（TFT），一个或多个像素电极和互连形成有源矩阵显示背板。 互连包括彼此电耦合的单独的间隔开的电极。 互连电极中的一个电耦合到TFT，并且另一个互连电极电耦合到像素电极，从而电连接TFT和像素电极。

公开(公告)号：US5258323A

公开(公告)日：1993-11-02

申请号：US998968

申请日：1992-12-29

申请人： Kalluri R. Sarma ,  Charles S. Chanley

发明人： Kalluri R. Sarma ,  Charles S. Chanley

IPC分类号： G02F1/1345 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/764 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/76264 ,  H01L21/2007 ,  H01L21/764 ,  H01L21/76275 ,  H01L21/76289 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/15 ,  Y10S438/977

摘要： A method for fabricating single crystal islands on a high temperature substrate, thereby allowing for the use of high temperature processes to further make devices incorporating the islands such as, for example, high mobility thin film transistor integrated drivers for active matrix displays. The method essentially includes depositing an etch stop layer on a single crystal silicon substrate, depositing a single crystal silicon device layer on the etch stop layer, bonding a quartz substrate to the single crystal silicon device layer at room temperature, sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate, grinding away a portion of the silicon substrate and a portion of the adhesive, etching away the remaining portion of the silicon substrate, removing the remaining portion of the adhesive, etching away the etch stop layer, applying a photoresist mask on the single crystal silicon device layer for defining the islands on the single crystal silicon device layer, etching single crystal silicon islands, and then the first non-room-temperature process of diffusion bonding the single crystal silicon islands to the quartz substrate.

摘要翻译： 一种用于在高温衬底上制造单晶岛的方法，从而允许使用高温工艺来进一步制造并入岛的器件，例如用于有源矩阵显示器的高迁移率薄膜晶体管集成驱动器。 该方法基本上包括在单晶硅衬底上沉积蚀刻停止层，在蚀刻停止层上沉积单晶硅器件层，在室温下将石英衬底结合到单晶硅器件层，用粘合剂密封和固定 单晶硅衬底，蚀刻停止层，单晶硅器件层和石英衬底的边缘，研磨硅衬底的一部分和粘合剂的一部分，蚀刻掉硅衬底的剩余部分， 去除粘合剂的剩余部分，蚀刻掉蚀刻停止层，在单晶硅器件层上施加光致抗蚀剂掩模以限定单晶硅器件层上的岛，蚀刻单晶硅岛， 将单晶硅岛扩散接合到石英衬底的室温过程。

公开(公告)号：US5168074A

公开(公告)日：1992-12-01

申请号：US696656

申请日：1991-05-07

申请人： Kalluri R. Sarma

发明人： Kalluri R. Sarma

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368

CPC分类号： G02F1/1362 ,  G02F1/136213 ,  G02F2001/134345 ,  G02F2001/134354 ,  Y10S148/014

摘要： A structure and method of fabricating a active matrix display with halftone grayscale and wide viewing angle, having an active matrix array and a control capacitor array fabricated on separate substrates.

摘要翻译： 制造具有半色调灰度和宽视角的有源矩阵显示器的结构和方法，其具有制造在分开的基板上的有源矩阵阵列和控制电容器阵列。

公开(公告)号：US5126865A

公开(公告)日：1992-06-30

申请号：US636534

申请日：1990-12-31

申请人： Kalluri R. Sarma

发明人： Kalluri R. Sarma

IPC分类号： G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30

CPC分类号： G02F1/136213 ,  G02F2001/134345 ,  G02F2203/30

摘要： A half-tone pixel having subpixels and control capacitor constituting a 100 percent optically active pixel. The subpixel design results in no reductions in the maximum pixel aperture ratio, brightness or contrast, as a pixel with no subpixels would have. Various subpixel layouts including differing numbers of subpixels and subpixel-turn-on sequences may be implemented and still result in the entire pixel being optically active.

公开(公告)号：US5110748A

公开(公告)日：1992-05-05

申请号：US733922

申请日：1991-07-22

申请人： Kalluri R. Sarma

发明人： Kalluri R. Sarma

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/306 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/30604 ,  H01L21/2007 ,  H01L21/76264 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78654 ,  G02F1/13454 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76289 ,  H01L2221/68368 ,  Y10S148/012 ,  Y10S148/15

摘要： High mobility thin film transistors for fabricating integrated drivers for active matrix displays and a special method of fabrication for obtaining the thin film transistors having mobility sufficiently high enough as drivers operable in the several megahertz frequency range needed for driving high resolution active matrix displays.

摘要翻译： 用于制造用于有源矩阵显示器的集成驱动器的高迁移率薄膜晶体管，以及用于获得具有足够高的移动性的薄膜晶体管的特殊制造方法，该驱动器可用于驱动高分辨率有源矩阵显示器所需的几兆赫兹频率范围内的驱动器。

公开(公告)号：US4427638A

公开(公告)日：1984-01-24

申请号：US301627

申请日：1981-09-14

申请人： Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

发明人： Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

IPC分类号： C30B13/00 ,  C30B13/24 ,  C30B13/06 ,  C30B13/32

CPC分类号： C30B13/24 ,  C30B13/00 ,  C30B29/60 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/1076 ,  Y10T117/1084

摘要： Apparatus is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.

摘要翻译： 提供了用于以刚性边缘模式进行半导体色带到色带转换的装置。 提供组合载体和掩模，通过该组合载体和掩模在转换过程中固定色带。 载体保持色带并同时从着色能量束的加热效应掩盖色带的边缘。 能量束（例如激光或电子束）撞击在带上并产生延伸穿过带的厚度的熔融区。 在生长过程中，使熔融区沿带的长度移动。 掩模防止带状物的最末端部分的熔化，从而允许快速生长速率和稳定的熔融区域，而不需要复杂的电子设备来在带状边缘处浇注能量束。