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    Releasing apparatus for separating a semiconductor substrate from a semiconductor template
    1.
    发明授权
    Releasing apparatus for separating a semiconductor substrate from a semiconductor template 有权
    用于从半导体模板分离半导体衬底的释放装置

    公开(公告)号：US09397250B2

    公开(公告)日：2016-07-19

    申请号：US13463757

    申请日：2012-05-03

    申请人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Sam Tone Tor ,  Karl-Josef Kramer

    发明人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Sam Tone Tor ,  Karl-Josef Kramer

    IPC分类号： H01L21/20 ,  H01L31/18 ,  H01L21/67 ,  H01L21/683 ,  H01L21/762

    CPC分类号： H01L31/18 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6838 ,  H01L21/76259 ,  H01L2924/19042 ,  Y10T29/53683 ,  Y10T279/11

    摘要： According to one embodiment, a releasing apparatus for separating a semiconductor substrate from a semiconductor template, the releasing apparatus having an enclosed pressure chamber having at least one gas inlet and at least one gas outlet. A top vacuum chuck for securing a released semiconductor substrate or semiconductor template in the enclosed pressure chamber. A bottom vacuum chuck for securing an attached semiconductor substrate and semiconductor template in the enclosed pressure chamber. A gap between the attached semiconductor substrate and semiconductor template and the top vacuum chuck allowing gas flowing through the gap to generate lifting forces on the attached semiconductor substrate and semiconductor template.

    摘要翻译： 根据一个实施例，一种用于从半导体模板分离半导体衬底的释放装置，所述释放装置具有封闭的压力室，其具有至少一个气体入口和至少一个气体出口。 用于将释放的半导体衬底或半导体模板固定在封闭的压力室中的顶部真空吸盘。 用于将附接的半导体衬底和半导体模板固定在封闭的压力室中的底部真空吸盘。 附着的半导体衬底和半导体模板和顶部真空吸盘之间的间隙允许气体流过间隙以在附着的半导体衬底和半导体模板上产生提升力。

    Method for releasing a thin semiconductor substrate from a reusable template
    3.
    发明授权
    Method for releasing a thin semiconductor substrate from a reusable template 有权
    从可重复利用的模板中释放薄的半导体衬底的方法

    公开(公告)号：US08193076B2

    公开(公告)日：2012-06-05

    申请号：US12826641

    申请日：2010-06-29

    申请人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Sam Tone Tor ,  Karl-Josef Kramer

    发明人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Sam Tone Tor ,  Karl-Josef Kramer

    IPC分类号： H01L21/20

    CPC分类号： H01L31/18 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6838 ,  H01L21/76259 ,  H01L2924/19042 ,  Y10T29/53683 ,  Y10T279/11

    摘要： The present disclosure relates to methods and apparatuses template. The method involves forming a mechanically weak layer conformally on a semiconductor template. Then forming a thin for releasing a thin semiconductor substrate from a reusable semiconductor substrate conformally on the mechanically weak layer. The thin semiconductor substrate, the mechanically weak layer and the template forming a wafer. Then defining the border of the thin-film semiconductor substrate to be released by exposing the peripheral of the mechanically weak layer. Then releasing the thin-film semiconductor substrate by applying a controlled air flow parallel to said mechanically weak layer wherein the controlled air flow separates the thin semiconductor substrate and template according to lifting forces.

    摘要翻译： 本公开涉及方法和装置模板。 该方法包括在半导体模板上共形形成机械弱层。 然后在机械弱层上共形成用于从可重复使用的半导体衬底释放薄半导体衬底的薄层。 薄半导体衬底，机械弱层和模板形成晶片。 然后通过暴露机械薄弱层的周边来限定待释放的薄膜半导体衬底的边界。 然后通过施加平行于所述机械弱层的受控空气流来释放薄膜半导体衬底，其中受控空气流根据提升力分离薄半导体衬底和模板。

    Rotatable device for holding a substrate
    5.
    发明授权
    Rotatable device for holding a substrate 有权
    用于保持基板的可旋转装置

    公开(公告)号：US07950347B2

    公开(公告)日：2011-05-31

    申请号：US11718572

    申请日：2005-11-03

    申请人： Katrin Weilermann ,  Karl-Josef Kramer

    发明人： Katrin Weilermann ,  Karl-Josef Kramer

    IPC分类号： B05C13/00 ,  B05C11/02 ,  B05B13/02

    CPC分类号： H01L21/6708 ,  B08B3/02 ,  B08B11/02 ,  H01L21/6838

    摘要： The invention provides a rotatable and optionally heatable device for holding a flat substrate. The device includes a supporting means for placing and holding the substrate on a supporting surface, optionally a heater, a means for rotating the supporting means and a means for applying a fluid, e.g. a solvent, onto the side of the substrate facing the supporting surface. The fluid is applied when the supporting device for supporting and holding the substrate is caused to rotate.

    摘要翻译： 本发明提供一种用于保持平坦基底的可旋转和任选可加热的装置。 该装置包括用于将基板放置并保持在支撑表面上的支撑装置，可选地是加热器，用于旋转支撑装置的装置和用于施加流体的装置， 溶剂，位于衬底的面向支撑表面的一侧。 当支撑和保持基板的支撑装置被旋转时，施加流体。

    Method for forming a silicide region on a silicon body
    6.
    发明授权
    Method for forming a silicide region on a silicon body 失效
    在硅体上形成硅化物区域的方法

    公开(公告)号：US5888888A

    公开(公告)日：1999-03-30

    申请号：US791775

    申请日：1997-01-29

    申请人： Somit Talwar ,  Guarav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

    发明人： Somit Talwar ,  Guarav Verma ,  Karl-Josef Kramer ,  Kurt Weiner

    IPC分类号： H01L21/225 ,  H01L21/265 ,  H01L21/268 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/22 ,  H01L21/24

    CPC分类号： H01L29/66507 ,  H01L21/268 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575 ,  H01L21/26506 ,  H01L21/26513

    摘要： The method of this invention produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes the steps of producing an amorphous region on the silicon body using ion implantation, for example, forming or positioning a metal such as titanium, cobalt or nickel in contact with the amorphous region, and irradiating the metal with intense light from a laser source, for example, to cause metal atoms to diffuse into the amorphous region. The amorphous region thus becomes an alloy region with the desired silicide composition. Upon cooling after irradiation, the alloy region becomes partially crystalline. To convert the alloy region into a more crystalline form, the invented method preferably includes a step of treating the alloy region using rapid thermal annealing, for example. An insulator layer and a conductive lead can subsequently be patterned to establish electrical contact to the silicide region. The low contact resistivity of the silicide region provides the capability to transmit relatively high-frequency electronic signals through the contact region. In a preferred application, the invented method is used to form self-aligned silicide contact regions for the gate, source and drain of a metal-insulator-semiconductor field-effect transistor (MISFET).

    摘要翻译： 本发明的方法在硅体上产生可用于各种目的的硅化物区域，包括降低与硅体或其上形成的集成电子器件的电接触电阻。 本发明的方法包括以下步骤：使用离子注入在硅体上产生非晶区域，例如形成或定位与非晶区域接触的诸如钛，钴或镍的金属，并用来自 例如，激光源使金属原子扩散到非晶区域。 因此，非晶区域成为具有所需硅化物组成的合金区域。 照射后冷却，合金区域变得部分结晶。 为了将合金区域转化为更结晶的形式，本发明的方法优选包括例如使用快速热退火处理合金区域的步骤。 随后可以对绝缘体层和导电引线进行构图以建立与硅化物区域的电接触。 硅化物区域的低接触电阻率提供了通过接触区域传输相对高频电子信号的能力。 在优选的应用中，本发明的方法用于形成用于金属 - 绝缘体 - 半导体场效应晶体管（MISFET）的栅极，源极和漏极的自对准硅化物接触区域。

    TOILET DEVICE WITH SUPPORT FUNCTIONS
    7.
    发明申请
    TOILET DEVICE WITH SUPPORT FUNCTIONS 有权

    公开(公告)号：US20210310227A1

    公开(公告)日：2021-10-07

    申请号：US17264273

    申请日：2019-07-31

    申请人： Karl-Josef KRAMER

    发明人： Werner Kramer ,  Karl-Josef Kramer

    IPC分类号： E03D9/08 ,  H04N5/232 ,  G06T7/00 ,  H04N5/225 ,  G03B17/56 ,  G02B27/00

    摘要： A toilet device with inspection functions, with highly controllable cleaning, drying and reporting functions is presented. Said device is geared towards users with impaired mobility and sensory functions, such as overweight people, people lacking strength or reach, as well as, and in particular, paraplegic and quadriplegic users with sensory impairments. This device allows the user to take full control of observing their bowel movement as well as controlling proper cleaning and drying afterwards, including optional post drying treatments such as using lotions in inflamed areas. Voice activation, push button, touch screen and joystick control allow for direct, flexible and reliable control of the implemented functions, despite a user's potential impairments. Logging and reporting to caretakers or doctors provides possibility for quick interaction and feedback, as well as tracking diet incompatibilities when coupled to or compared with a user's diet diary.

    PHOTOVOLTAIC MONOLITHIC SOLAR MODULE CONNECTION AND FABRICATION METHODS
    8.
    发明申请
    PHOTOVOLTAIC MONOLITHIC SOLAR MODULE CONNECTION AND FABRICATION METHODS 审中-公开
    光伏单片太阳能模块连接和制造方法

    公开(公告)号：US20150155398A1

    公开(公告)日：2015-06-04

    申请号：US14495883

    申请日：2014-09-24

    申请人： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Pawan Kapur ,  Thom Stalcup ,  Michael Wingert

    发明人： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Pawan Kapur ,  Thom Stalcup ,  Michael Wingert

    IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/02 ,  H02S40/36

    CPC分类号： H02S40/36 ,  H01L31/0201 ,  H01L31/022441 ,  H01L31/0516 ,  Y02E10/50

    摘要： Solar cell array solutions including monolithic solar cell arrays and fabrication methods. A first patterned cell metallization contacts base and emitter regions of each of a plurality of solar cells having a light receiving frontside and a backside. An electrically insulating continuous backplane layer is attached to the backside of the solar cells and covers the first cell metallization of each of the solar cells. Via holes through the continuous backplane layer provide access to the first cell metallization. A second cell metallization is connected to the first cell metallization of each of the solar cells and electrically interconnects the solar cells in the array.

    摘要翻译： 太阳能电池阵列解决方案，包括单片太阳能电池阵列和制造方法。 第一图案化电池金属化接触具有光接收前侧和后侧的多个太阳能电池中的每一个的基极和发射极区域。 电绝缘的连续背板层连接到太阳能电池的背面并且覆盖每个太阳能电池的第一电池金属化。 穿过连续背板层的通孔提供对第一电池金属化的访问。 第二电池金属化连接到每个太阳能电池的第一电池金属化，并将阵列中的太阳能电池电互连。

    ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS
    10.
    发明申请
    ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS 审中-公开
    薄硅太阳能电池的主动背板

    公开(公告)号：US20130000715A1

    公开(公告)日：2013-01-03

    申请号：US13433280

    申请日：2012-03-28

    申请人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Sam Tone Tor ,  Anthony Calcaterra

    发明人： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Sam Tone Tor ,  Anthony Calcaterra

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/022441 ,  H01L31/0516 ,  H01L31/1804 ,  Y02E10/50

    摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

    摘要翻译： 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，以及在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。