Constant velocity universal joint
    2.
    发明授权
    Constant velocity universal joint 失效
    恒速万向节

    公开(公告)号:US08162765B2

    公开(公告)日:2012-04-24

    申请号:US12518530

    申请日:2007-12-05

    IPC分类号: F16D3/224

    CPC分类号: F16D3/2245 Y10S464/906

    摘要: In a fixed type constant velocity universal joint, a center of each of guide grooves of an outer joint member is offset to a position of being spaced apart from a joint central plane to a joint opening side by an axial distance, and is spaced apart from a joint central axis line to an opposite side in a radial direction with respect to each of the guide grooves by a radial distance. Further, a center of each of guide grooves of an inner joint member is offset to a position of being spaced apart from the joint central plane to a joint innermost side by the axial distance, and is spaced apart from the joint central axis line to the opposite side in the radial direction with respect to each of the guide grooves by the radial distance.

    摘要翻译: 在固定式等速万向接头中,外接头构件的每个导向槽的中心偏移到与接头中心平面相对于接头开口侧间隔一定距离的位置,并且与其间隔开 相对于每个引导槽径向相对于径向的相对侧的接合中心轴线。 此外,内关节构件的每个导向槽的中心偏移到从接头中心平面到接头最内侧轴距离的位置,并且与接头中心轴线间隔开 相对于每个导向槽的径向方向的相反侧具有径向距离。

    Constant velocity joint
    3.
    发明授权
    Constant velocity joint 失效
    恒速接头

    公开(公告)号:US07942750B2

    公开(公告)日:2011-05-17

    申请号:US11991171

    申请日:2006-08-09

    IPC分类号: F16D3/223

    摘要: A joint outer ring of a constant-velocity joint has a stem portion protruding from of a cup portion and inserted to a through hole of a hub in a bearing device. The joint outer ring has an abutment face abutting against an end face of a bearing inner ring fitted to an outer periphery of the hub in an outer bottom face of the cup portion, and is composed of a forged product of a steel material. The joint outer ring has a base material portion composed of a standard structure and an outer surface layer partially formed as a non-standard structure portion. The non-standard structure may be a tempered martensite structure, or a mixed structure including the tempered martensite structure and at least one of an upper bainite structure and a lower bainite structure.

    摘要翻译: 恒速接头的接头外圈具有从杯部突出并插入到轴承装置中的轮毂的通孔的杆部。 所述接合外圈具有与所述杯部的外底面嵌合于所述轮毂的外周的轴承内圈的端面抵接的邻接面,并且由钢材的锻造品构成。 接头外圈具有由标准结构构成的基材部分和部分地形成为非标准结构部分的外表面层。 非标准结构可以是回火马氏体结构,或包括回火马氏体组织和上贝氏体组织和下贝氏体组织中的至少一种的混合结构。

    Examination System and Examination Method
    6.
    发明申请
    Examination System and Examination Method 审中-公开
    考试制度和考试方法

    公开(公告)号:US20090177098A1

    公开(公告)日:2009-07-09

    申请号:US12087930

    申请日:2006-12-08

    IPC分类号: A61B5/02

    摘要: The blood flow is examined by making multifractal analysis of a blood flow velocity distribution in a vascular network and detecting a deviation of the blood flow velocity distribution from the multifractal distribution. The blood flow velocity distribution is provided as an image by irradiating laser light to the vascular network, converging, by an imaging lens, scattered laser light rays by blood cells in the blood flowing through blood vessels, detecting, by a photodetector, a speckle pattern produced owing to random interference between the scattered laser light rays and calculating the rate of change with time lapse of each speckle in the speckle pattern.

    摘要翻译: 通过对血管网络中的血流速度分布进行多重分形分析并检测血流速度分布与多重分形分布的偏差来检查血流量。 血液流速分布通过向血管网照射激光,通过成像镜片会聚在血管内的血液中的血细胞分散的激光,由光电检测器检测出斑点图案 由于散射激光之间的随机干涉而产生,并且计算散斑图案中每个斑点随时间变化的变化率。

    Composite integrated semiconductor device
    7.
    发明申请
    Composite integrated semiconductor device 有权
    复合集成半导体器件

    公开(公告)号:US20080285188A1

    公开(公告)日:2008-11-20

    申请号:US12071604

    申请日:2008-02-22

    IPC分类号: H02H9/04

    摘要: A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating circuit attenuates the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.

    摘要翻译: 复合集成半导体器件。 在一个实施例中,输入浪涌/噪声吸收电路从输入信号吸收浪涌,衰减电路衰减输入信号,电信号转换电路将输入信号转换成输出信号。 输入浪涌/噪声吸收电路,衰减电路和电信号转换电路一起形成一个单元,并且多个这些单元并联在一个半导体衬底中以形成复合集成半导体器件,从而减少 安装在印刷电路板上的分立组件的数量。

    Bearing apparatus for a wheel of vehicle
    8.
    发明授权
    Bearing apparatus for a wheel of vehicle 有权
    用于车轮的轴承装置

    公开(公告)号:US07452136B2

    公开(公告)日:2008-11-18

    申请号:US10864948

    申请日:2004-06-10

    IPC分类号: F16C19/08

    摘要: A vehicle wheel bearing apparatus which can increase the strength and durability of the hub wheel under rotary bending conditions as well as lighten the apparatus without changing the configuration and dimension of the wheel mounting flange and without causing surface run-out has an outer member formed with double row outer raceway surfaces on its inner peripheral surface. An inner member is formed with double row inner raceway surfaces arranged opposite to the double row outer raceway surfaces. Double row rolling elements are freely rollably contained between the outer and inner raceway surfaces, respectively, of the outer and inner members. A wheel mounting flange is integrally formed with either one of the outer or inner members. At least one of the outer and inner members, on which the wheel mounting flange is formed, is heat treated and their raceway surfaces are hardened by quenching to a predetermined surface hardness.

    摘要翻译: 一种能够在旋转弯曲条件下增加轮毂轮的强度和耐用性的车轮轴承装置,并且在不改变车轮安装凸缘的构造和尺寸的同时减轻设备并且不引起表面跳动,具有形成有 双列外滚道表面在其内周面上。 内部构件形成有与双列外滚道表面相对布置的双列内滚道表面。 双列滚动元件可自由地滚动地容纳在外部和内部构件的外部和内部滚道表面之间。 轮安装凸缘与外部构件或内部构件中的任一个一体地形成。 在其中形成有轮安装凸缘的外部构件和内部构件中的至少一个被热处理,并且其轨道表面通过淬火硬化至预定的表面硬度。

    Composite integrated semiconductor device
    9.
    发明申请
    Composite integrated semiconductor device 有权
    复合集成半导体器件

    公开(公告)号:US20070285855A1

    公开(公告)日:2007-12-13

    申请号:US11723356

    申请日:2007-03-19

    IPC分类号: H02H9/04

    摘要: A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.

    摘要翻译: 复合集成半导体器件。 在一个实施例中,输入浪涌/噪声吸收电路从输入信号吸收浪涌,衰减/电平移位电路衰减或电平移位输入信号,电信号转换电路将输入信号转换为输出信号。 输入浪涌/噪声吸收电路,衰减或电平移位电路和电信号转换电路一起形成一个单元,并且多个这些单元并联在一个半导体衬底中以形成复合集成半导体器件,从而得到 减少安装在印刷电路板上的分立元件的数量。

    Semiconductor device having a lateral MOSFET and combined IC using the same
    10.
    发明授权
    Semiconductor device having a lateral MOSFET and combined IC using the same 有权
    具有横向MOSFET的半导体器件和使用其的组合IC

    公开(公告)号:US06977425B2

    公开(公告)日:2005-12-20

    申请号:US10442648

    申请日:2003-05-21

    摘要: A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.

    摘要翻译: 半导体器件在集成智能开关器件,双积分型信号输入和转换IC以及组合电源IC中使用的横向MOSFET的窄芯片区域内实现了高静电放电耐受能力和高耐冲击能力。 半导体器件包括其中基极电连接到发射极和集电极的垂直双极晶体管,以及包括连接到表面电极的漏电极的横向MOSFET。 当施加高静电放电电压或高浪涌电压时,垂直双极晶体管吸收静电放电或浪涌能量,并将静电放电电压或浪涌电压限制为低于横向MOSFET的击穿电压。