摘要:
A hydrogen sensor which may be employed in an overcharge/overdischarge detector for a battery and a hydrogen leakage detector for a fuel cell is provided. The hydrogen sensor includes a sensor element and a diffused resistor member. The gas to be measured passes through the diffused resistor member and reaches the sensor element. The sensor element outputs a signal indicative of the concentration of hydrogen contained in the gas as a function of a decrease in concentration of oxygen contained in the gas arising from reaction of the hydrogen on the oxygen. The diffused resistor member is so designed that speeds of diffusion of the hydrogen and the oxygen when passing through the diffused resistor member are different from each other for increasing the sensitivity of measurement of the concentration of hydrogen.
摘要:
In a fixed type constant velocity universal joint, a center of each of guide grooves of an outer joint member is offset to a position of being spaced apart from a joint central plane to a joint opening side by an axial distance, and is spaced apart from a joint central axis line to an opposite side in a radial direction with respect to each of the guide grooves by a radial distance. Further, a center of each of guide grooves of an inner joint member is offset to a position of being spaced apart from the joint central plane to a joint innermost side by the axial distance, and is spaced apart from the joint central axis line to the opposite side in the radial direction with respect to each of the guide grooves by the radial distance.
摘要:
A joint outer ring of a constant-velocity joint has a stem portion protruding from of a cup portion and inserted to a through hole of a hub in a bearing device. The joint outer ring has an abutment face abutting against an end face of a bearing inner ring fitted to an outer periphery of the hub in an outer bottom face of the cup portion, and is composed of a forged product of a steel material. The joint outer ring has a base material portion composed of a standard structure and an outer surface layer partially formed as a non-standard structure portion. The non-standard structure may be a tempered martensite structure, or a mixed structure including the tempered martensite structure and at least one of an upper bainite structure and a lower bainite structure.
摘要:
A bearing device for a wheel enabling the easy control of quality since there is no possibility of cracking even if caulking is applied thereto. The bearing device comprises an outer ring having double rows of raceway surfaces on the inner periphery thereof, an inner member having raceway surfaces opposed to the raceway surfaces, and balls interposed between the double rows of raceway surfaces opposed to each other. The inner member further comprises a HUB ring and an inner ring. Caulking is applied to the HUB ring to join it to the inner ring. The grain size number of the austenite grains of a caulked section is at least 6.
摘要:
A hub ring and/or an outer ring constituting a bearing device for a wheel, which is formed of a steel which contains 0.45 to 0.70 mass % of C and at least one of V, Nb and Ti in a total amount of 0.3 mass % or less, wherein a micro structure of a part being not surface-hardening-treated contains a ferrite in 15 to 30 area % and contains a particulate ferrite.
摘要:
The blood flow is examined by making multifractal analysis of a blood flow velocity distribution in a vascular network and detecting a deviation of the blood flow velocity distribution from the multifractal distribution. The blood flow velocity distribution is provided as an image by irradiating laser light to the vascular network, converging, by an imaging lens, scattered laser light rays by blood cells in the blood flowing through blood vessels, detecting, by a photodetector, a speckle pattern produced owing to random interference between the scattered laser light rays and calculating the rate of change with time lapse of each speckle in the speckle pattern.
摘要:
A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating circuit attenuates the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.
摘要:
A vehicle wheel bearing apparatus which can increase the strength and durability of the hub wheel under rotary bending conditions as well as lighten the apparatus without changing the configuration and dimension of the wheel mounting flange and without causing surface run-out has an outer member formed with double row outer raceway surfaces on its inner peripheral surface. An inner member is formed with double row inner raceway surfaces arranged opposite to the double row outer raceway surfaces. Double row rolling elements are freely rollably contained between the outer and inner raceway surfaces, respectively, of the outer and inner members. A wheel mounting flange is integrally formed with either one of the outer or inner members. At least one of the outer and inner members, on which the wheel mounting flange is formed, is heat treated and their raceway surfaces are hardened by quenching to a predetermined surface hardness.
摘要:
A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.
摘要:
A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.