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1.发明申请CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS 有权用于EB或EUV光刻和图案处理的化学放大正电阻组合物公开(公告)号：US20110200941A1
公开(公告)日：2011-08-18
申请号：US13027356
申请日：2011-02-15
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).
摘要翻译： 提供了用于EB或EUV光刻的化学放大型正性抗蚀剂组合物，其包含（A）聚合物或聚合物共混物，其中聚合物或聚合物共混物的膜不溶于碱性显影剂，但在酸的作用下变得可溶，（B ）酸产生剂，（C）碱性化合物和（D）溶剂。 碱性化合物（C）是包含具有作为碱性活性位点的具有仲胺结构或叔胺结构的侧链的重复单元并且构成作为组分（A）的聚合物或聚合物的一部分或全部的聚合物。
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公开(公告)号：US20100304302A1
公开(公告)日：2010-12-02
申请号：US12789747
申请日：2010-05-28
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397
摘要： A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or CF2CF3, A is a divalent hydrocarbon group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. Recurring units containing an aromatic ring structure are present in an amount ≧60 mol % and the recurring units having formula (1) are present in an amount
摘要翻译： 化学放大抗蚀剂组合物包含含有极性赋予粘合性的单元的聚合物和适于在酸的作用下使碱溶性变成酸性不稳定单元。 聚合物包含具有式（1）的重复单元，其中R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或CF 2 CF 3，A是二价烃基，R 2，R 3和R 4是烷基，烯基， 芳基，芳烷基或芳氧基烷基。 含有芳环结构的重复单元的存在量为≥60mol％，并且具有式（1）的重复单元以<5mol％的量存在。
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3.发明申请公开(公告)号：US20110200919A1
公开(公告)日：2011-08-18
申请号：US13027362
申请日：2011-02-15
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified positive resist composition is provided comprising a polymer PB having an amine structure bound thereto and a polymer PA comprising recurring units having an acidic side chain protected with an acid labile protective group and recurring units having an acid generating moiety on a side chain.
摘要翻译： 提供化学放大的正性抗蚀剂组合物，其包含具有结合于其上的胺结构的聚合物PB和包含具有由酸不稳定保护基保护的酸性侧链的重复单元的聚合物PA和在侧链上具有产酸部分的重复单元。
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公开(公告)号：US20110129765A1
公开(公告)日：2011-06-02
申请号：US12902868
申请日：2010-10-12
CPC分类号： G03F7/0382 , G03F7/0045
摘要： There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.
摘要翻译： 公开了一种负型抗蚀剂组合物，其中基础树脂至少含有由以下通式（1）和通式（2）表示的重复单元，其重均分子量为1,000至10,000，并且含有氮原子的化合物 碱性组分含有一种或多种具有羧基并且不具有与碱中心氮原子共价键合的氢原子的胺化合物。 可以存在几乎不发生桥的负的抗蚀剂组合物，衬底依赖性低，并且可以形成具有高灵敏度和高分辨率的图案，以及使用其的图案化处理。
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公开(公告)号：US20110003251A1
公开(公告)日：2011-01-06
申请号：US12786013
申请日：2010-05-24
CPC分类号： G03F7/0395 , G03F7/0397
摘要： The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.
摘要翻译： 本发明涉及正性抗蚀剂组合物和使用其的图案形成方法。 本发明提供：具有增强的抗蚀刻性和优异分辨率的正型抗蚀剂组合物，并且即使在抗蚀剂的基板侧边界面，也能够在光刻中进行精细加工，并且特别是在光刻中， 作为曝光源，KrF激光，极紫外线，电子束，X射线等; 以及利用正性抗蚀剂组合物的图案形成工艺。
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公开(公告)号：US20120219888A1
公开(公告)日：2012-08-30
申请号：US13407325
申请日：2012-02-28
IPC分类号： G03F1/76 , G03F7/004 , G03F7/20 , C08F228/02
CPC分类号： G03F7/0388 , C08F220/24 , G03F1/54 , G03F1/76 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/20 , G03F7/2041
摘要： A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.
摘要翻译： 使用包含0.5-10摩尔％具有产酸能力的重复单元和50-99.5摩尔％的在碱性显影剂中溶解的重复单元的聚合物来配制化学放大的负性抗蚀剂组合物。 当用于光刻工艺时，组合物显示出高分辨率，并形成具有最小LER和底切的轮廓的负抗蚀剂图案。
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7.发明申请SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS 有权磺酸钠，聚合物，使用固体聚合物的化学稳定化学组合物和耐药性方法公开(公告)号：US20120308920A1
公开(公告)日：2012-12-06
申请号：US13476629
申请日：2012-05-21
IPC分类号： G03F7/20 , G03F1/76 , C07D487/08 , C08F228/04
CPC分类号： G03F7/0392 , C07C309/12 , C07C309/19 , C07C309/22 , C08F20/28 , C08F2220/382 , G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition.
摘要翻译： 公开了由以下通式（1）表示的锍盐。 可以是能够引入酸产生单元的锍盐，其产生具有适当的酸强度并且不损害与基材的粘合性的酸成为基础聚合物; 使用所述锍盐的聚合物; 使用所述聚合物作为基础聚合物的化学放大抗蚀剂组合物; 以及使用所述化学放大抗蚀剂组合物的图案化工艺。
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8.发明申请公开(公告)号：US20080241751A1
公开(公告)日：2008-10-02
申请号：US12058967
申请日：2008-03-31
申请人： Takanobu TAKEDA , Tamotsu WATANABE , Ryuji KOITABASHI , Keiichi MASUNAGA , Akinobu TANAKA , Osamu WATANABE
发明人： Takanobu TAKEDA , Tamotsu WATANABE , Ryuji KOITABASHI , Keiichi MASUNAGA , Akinobu TANAKA , Osamu WATANABE
CPC分类号： G03F7/0382 , G03F7/20
摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
摘要翻译： 化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。 在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥接形成最小化。
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9.发明申请公开(公告)号：US20130209922A1
公开(公告)日：2013-08-15
申请号：US13371999
申请日：2012-02-13
CPC分类号： G03F7/0382
摘要： A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.
摘要翻译： 使用包含在侧链上具有可酸消除基团的重复单元和含芳环的环烯烃单元的聚合物来配制化学放大的负性抗蚀剂组合物。 降低了在形成包括隔离特征和隔离空间部分的图案中可能出现的照射图案和形成的抗蚀剂之间的任何尺寸偏移，并且获得高分辨率。
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10.发明申请NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 有权新型磺酸盐，聚合物，聚合物的生产方法，耐腐蚀组合物和方法公开(公告)号：US20110189607A1
公开(公告)日：2011-08-04
申请号：US13013506
申请日：2011-01-25
IPC分类号： G03F7/004 , G03F7/20 , C07C69/54 , C08F220/38
CPC分类号： C07C69/54 , C08F220/38 , G03F7/004 , G03F7/20
摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
摘要翻译： 公开了由以下通式（1）表示的锍盐。 在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者，R 2和R 3可以相互结合，与式中的硫原子一起形成环。 可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从 锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。
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