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公开(公告)号：US20120219888A1
公开(公告)日：2012-08-30
申请号：US13407325
申请日：2012-02-28
IPC分类号： G03F1/76 , G03F7/004 , G03F7/20 , C08F228/02
CPC分类号： G03F7/0388 , C08F220/24 , G03F1/54 , G03F1/76 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/20 , G03F7/2041
摘要： A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.
摘要翻译： 使用包含0.5-10摩尔％具有产酸能力的重复单元和50-99.5摩尔％的在碱性显影剂中溶解的重复单元的聚合物来配制化学放大的负性抗蚀剂组合物。 当用于光刻工艺时，组合物显示出高分辨率，并形成具有最小LER和底切的轮廓的负抗蚀剂图案。
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公开(公告)号：US20110003251A1
公开(公告)日：2011-01-06
申请号：US12786013
申请日：2010-05-24
CPC分类号： G03F7/0395 , G03F7/0397
摘要： The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.
摘要翻译： 本发明涉及正性抗蚀剂组合物和使用其的图案形成方法。 本发明提供：具有增强的抗蚀刻性和优异分辨率的正型抗蚀剂组合物，并且即使在抗蚀剂的基板侧边界面，也能够在光刻中进行精细加工，并且特别是在光刻中， 作为曝光源，KrF激光，极紫外线，电子束，X射线等; 以及利用正性抗蚀剂组合物的图案形成工艺。
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3.发明申请SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS 有权磺酸钠，聚合物，使用固体聚合物的化学稳定化学组合物和耐药性方法公开(公告)号：US20120308920A1
公开(公告)日：2012-12-06
申请号：US13476629
申请日：2012-05-21
IPC分类号： G03F7/20 , G03F1/76 , C07D487/08 , C08F228/04
CPC分类号： G03F7/0392 , C07C309/12 , C07C309/19 , C07C309/22 , C08F20/28 , C08F2220/382 , G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition.
摘要翻译： 公开了由以下通式（1）表示的锍盐。 可以是能够引入酸产生单元的锍盐，其产生具有适当的酸强度并且不损害与基材的粘合性的酸成为基础聚合物; 使用所述锍盐的聚合物; 使用所述聚合物作为基础聚合物的化学放大抗蚀剂组合物; 以及使用所述化学放大抗蚀剂组合物的图案化工艺。
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4.发明申请公开(公告)号：US20110200919A1
公开(公告)日：2011-08-18
申请号：US13027362
申请日：2011-02-15
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified positive resist composition is provided comprising a polymer PB having an amine structure bound thereto and a polymer PA comprising recurring units having an acidic side chain protected with an acid labile protective group and recurring units having an acid generating moiety on a side chain.
摘要翻译： 提供化学放大的正性抗蚀剂组合物，其包含具有结合于其上的胺结构的聚合物PB和包含具有由酸不稳定保护基保护的酸性侧链的重复单元的聚合物PA和在侧链上具有产酸部分的重复单元。
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公开(公告)号：US20110129765A1
公开(公告)日：2011-06-02
申请号：US12902868
申请日：2010-10-12
CPC分类号： G03F7/0382 , G03F7/0045
摘要： There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.
摘要翻译： 公开了一种负型抗蚀剂组合物，其中基础树脂至少含有由以下通式（1）和通式（2）表示的重复单元，其重均分子量为1,000至10,000，并且含有氮原子的化合物 碱性组分含有一种或多种具有羧基并且不具有与碱中心氮原子共价键合的氢原子的胺化合物。 可以存在几乎不发生桥的负的抗蚀剂组合物，衬底依赖性低，并且可以形成具有高灵敏度和高分辨率的图案，以及使用其的图案化处理。
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6.发明申请公开(公告)号：US20130209922A1
公开(公告)日：2013-08-15
申请号：US13371999
申请日：2012-02-13
CPC分类号： G03F7/0382
摘要： A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.
摘要翻译： 使用包含在侧链上具有可酸消除基团的重复单元和含芳环的环烯烃单元的聚合物来配制化学放大的负性抗蚀剂组合物。 降低了在形成包括隔离特征和隔离空间部分的图案中可能出现的照射图案和形成的抗蚀剂之间的任何尺寸偏移，并且获得高分辨率。
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7.发明申请NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS 有权新型磺酸盐，聚合物，聚合物的生产方法，耐腐蚀组合物和方法公开(公告)号：US20110189607A1
公开(公告)日：2011-08-04
申请号：US13013506
申请日：2011-01-25
IPC分类号： G03F7/004 , G03F7/20 , C07C69/54 , C08F220/38
CPC分类号： C07C69/54 , C08F220/38 , G03F7/004 , G03F7/20
摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
摘要翻译： 公开了由以下通式（1）表示的锍盐。 在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者，R 2和R 3可以相互结合，与式中的硫原子一起形成环。 可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从 锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。
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8.发明申请PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS 审中-公开光电隔离膜，电阻图案形成工艺和光刻胶制备工艺公开(公告)号：US20080305411A1
公开(公告)日：2008-12-11
申请号：US12129975
申请日：2008-05-30
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
摘要翻译： 光掩模坯料具有抗蚀剂膜，其包含（A）基础树脂，（B）酸产生剂和（C）碱性化合物。 抗蚀剂膜还包含（D）包含具有侧链的聚合物的聚合物，所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链，所述连续碳原子总共至少 两个氟原子键合到其上。 聚合物（D）的添加确保了整个抗蚀剂膜的均匀显影，能够形成具有高CD均匀性的抗蚀剂图案。
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公开(公告)号：US20130192879A1
公开(公告)日：2013-08-01
申请号：US13560239
申请日：2012-07-27
CPC分类号： H05K1/115 , H05K3/10 , H05K3/4602 , H05K3/4655 , Y10T29/49155
摘要： A multilayer printed wiring board has a core substrate including first insulation layers, first conductive patterns formed on the first insulation layers, and first via conductors formed through the first insulation layers and connecting the first conductive patterns, and a buildup layer formed on the core substrate and including second insulation layers, second conductive patterns formed on the second insulation layers, and second via conductors formed through the second insulation layers and connecting the second conductive patterns. Each of the first insulation layers includes an inorganic reinforcing fiber material, each of the second insulation layers does not include an inorganic reinforcing fiber material, and the core substrate includes an inductor having the first conductive patterns and the first via conductors.
摘要翻译： 多层印刷电路板具有芯基板，其包括第一绝缘层，形成在第一绝缘层上的第一导电图案和通过第一绝缘层形成并连接第一导电图案的第一通孔导体以及形成在芯基板上的积层 并且包括第二绝缘层，形成在第二绝缘层上的第二导电图案，以及通过第二绝缘层形成并连接第二导电图案的第二通孔导体。 每个第一绝缘层包括无机增强纤维材料，每个第二绝缘层不包括无机增强纤维材料，并且芯基板包括具有第一导电图案和第一通孔导体的电感器。
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公开(公告)号：US20130022025A1
公开(公告)日：2013-01-24
申请号：US13471655
申请日：2012-05-15
CPC分类号： H04W36/30 , H04B7/2606 , H04W36/0055 , H04W84/047
摘要： A base station, to which a cell belongs and which communicates with a relay node to which a relay node cell belongs, including a control unit configured, at a time of handing over the relay node from another cell belonging to a first base station to the cell belonging to the base station, to request the relay node to measure wireless quality of neighbour cells of the cell belonging to the base station and report a measurement result of the wireless quality, and to update by adding or deleting, if the measurement result of the wireless quality of a first neighbour cell among the neighbour cells is higher or lower than a predetermined threshold for the cell existing at the handover destination of the relay node, the relay node cell to or from a first neighbour cell list of the first neighbour cell, respectively.
摘要翻译： 基站，小区属于哪个基站，并与中继节点小区所属的中继节点进行通信，该基站包括在将属于第一基站的另一小区的中继节点从第一基站转交给第二基站时配置的控制单元 请求中继节点测量属于基站的小区的相邻小区的无线质量，并报告无线质量的测量结果，并通过添加或删除更新，如果测量结果为 相邻小区中的第一相邻小区的无线质量高于或低于存在于中继节点的切换目的地处的小区的预定阈值，中继节点到第一相邻小区的第一相邻小区列表或来自第一相邻小区的第一相邻小区列表 ， 分别。
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