公开(公告)号：US20120178241A1

公开(公告)日：2012-07-12

申请号：US12986266

申请日：2011-01-07

申请人： Kelly Malone ,  Habib Hichri

发明人： Kelly Malone ,  Habib Hichri

IPC分类号： H01L21/20 ,  B05D5/00 ,  H01B1/02

CPC分类号： H01B5/14 ,  H01B1/02 ,  H01B13/0026 ,  H01L21/283 ,  H01L21/76843 ,  H01L21/76871 ,  Y10T428/24999 ,  Y10T428/2982 ,  Y10T428/2989 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A metal seed composition useful in seeding a metal diffusion barrier or conductive metal layer on a semiconductor or dielectric substrate, the composition comprising: a nanoscopic metal component that includes a metal useful as a metal diffusion barrier or conductive metal; an adhesive component for attaching said nanoscopic metal component on said semiconductor or dielectric substrate; and a linker component that links said nanoscopic metal component with said adhesive component. Semiconductor and dielectric substrates coated with the seed compositions, as well as methods for depositing the seed compositions, are also described.

摘要翻译： 一种金属种子组合物，其可用于在半导体或电介质基底上接种金属扩散阻挡层或导电金属层，所述组合物包括：纳米金属组分，其包含可用作金属扩散阻挡层或导电金属的金属; 用于将所述纳米金属部件附着在所述半导体或电介质基板上的粘合部件; 以及将所述纳米金属组分与所述粘合剂组分连接的连接剂组分。 还描述了涂覆有种子组合物的半导体和电介质基质以及沉积种子组合物的方法。

公开(公告)号：US20050087490A1

公开(公告)日：2005-04-28

申请号：US10695374

申请日：2003-10-28

申请人： Mark Chace ,  Jeffrey Hedrick ,  Habib Hichri ,  Keith Pope ,  Jia Lee ,  Kelly Malone ,  Kenneth McCullough ,  Wayne Moreau ,  Darryl Restaino ,  Shahab Siddiqui

发明人： Mark Chace ,  Jeffrey Hedrick ,  Habib Hichri ,  Keith Pope ,  Jia Lee ,  Kelly Malone ,  Kenneth McCullough ,  Wayne Moreau ,  Darryl Restaino ,  Shahab Siddiqui

IPC分类号： B01D11/04 ,  B01D11/00

CPC分类号： B01D11/0407

摘要： A process of removing impurities from a cured low dielectric constant organic polymeric film disposed on a semiconductor device. The process involves disposing a low dielectric constant curable organic polymeric film on an electrically conductive surface of a semiconductor device. The organic polymeric film is cured on the semiconductor device and thereupon contacted with supercritical carbon dioxide, optionally in the presence of at least one cosolvent.

摘要翻译： 从设置在半导体器件上的固化的低介电常数有机聚合物膜去除杂质的方法。 该方法包括将低介电常数可固化有机聚合物膜设置在半导体器件的导电表面上。 有机聚合物膜在半导体器件上固化，随后与超临界二氧化碳接触，任选地在至少一种助溶剂的存在下。

公开(公告)号：US06831363B2

公开(公告)日：2004-12-14

申请号：US10319032

申请日：2002-12-12

申请人： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

发明人： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

IPC分类号： H01L2348

CPC分类号： H01L21/76808 ,  H01L21/76801 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

摘要翻译： 用于半导体器件的互连结构包括在较低金属化水平上形成的有机低介电常数（低k）电介质层。 形成的通孔在低k电介质层内，通孔连接在下金属化层形成的下金属化线与上金属化层形成的上金属化线。 通孔被选自具有热膨胀系数（CTE）的材料的结构轴环包围，以便在低k电介质层的热膨胀之后保护通孔不受剪切力的影响。

公开(公告)号：US08647535B2

公开(公告)日：2014-02-11

申请号：US12986266

申请日：2011-01-07

申请人： Kelly Malone ,  Habib Hichri

发明人： Kelly Malone ,  Habib Hichri

IPC分类号： H01B1/02

CPC分类号： H01B5/14 ,  H01B1/02 ,  H01B13/0026 ,  H01L21/283 ,  H01L21/76843 ,  H01L21/76871 ,  Y10T428/24999 ,  Y10T428/2982 ,  Y10T428/2989 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A metal seed composition useful in seeding a metal diffusion barrier or conductive metal layer on a semiconductor or dielectric substrate, the composition comprising: a nanoscopic metal component that includes a metal useful as a metal diffusion barrier or conductive metal; an adhesive component for attaching said nanoscopic metal component on said semiconductor or dielectric substrate; and a linker component that links said nanoscopic metal component with said adhesive component. Semiconductor and dielectric substrates coated with the seed compositions, as well as methods for depositing the seed compositions, are also described.

公开(公告)号：US06764873B2

公开(公告)日：2004-07-20

申请号：US10199287

申请日：2002-07-18

申请人： Habib Hichri ,  Kelly Malone ,  Arthur Martin

发明人： Habib Hichri ,  Kelly Malone ,  Arthur Martin

IPC分类号： H01L5140

CPC分类号： H01L21/02203 ,  C08L71/00 ,  C09J179/08 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312 ,  Y02P20/544 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31721

摘要： A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.

摘要翻译： 提供有热固性多孔绝缘膜的半导体晶片，其中绝缘膜被制成多孔的，在晶片上固化和聚合。 该膜的特征在于基于其选区和孔隙率的非常低的介电常数，后者的特性是由于在聚合反应混合物中包含液体或超临界二氧化碳引起的。

公开(公告)号：US08642475B2

公开(公告)日：2014-02-04

申请号：US12975327

申请日：2010-12-21

申请人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

发明人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

IPC分类号： H01L21/311

CPC分类号： H01L21/31138 ,  H01L21/32139

摘要： A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.

摘要翻译： 集成电路系统的制造方法包括：提供基板; 在衬底上形成多晶硅层; 在所述多晶硅层上形成抗反射涂层; 将抗反射涂层图案蚀刻到抗反射涂层中，在多晶硅层上留下抗反射涂层残留物; 以及用包括溴化氢，氯和氧的蚀刻剂气体混合物蚀刻抗反射涂层残余物以除去抗反射涂层残余物以减轻多晶硅突起的形成。

公开(公告)号：US08030157B1

公开(公告)日：2011-10-04

申请号：US12782050

申请日：2010-05-18

申请人： Habib Hichri ,  Ahmad D. Katnani ,  Kaushik A. Kumar ,  Narender Rana ,  Richard S. Wise ,  Hakeem B. S. Akinmade-Yusuff

发明人： Habib Hichri ,  Ahmad D. Katnani ,  Kaushik A. Kumar ,  Narender Rana ,  Richard S. Wise ,  Hakeem B. S. Akinmade-Yusuff

IPC分类号： H01L21/8242

CPC分类号： H01L21/76232

摘要： A method of forming a trench in a semiconductor device formed of a substrate and a first layer formed over the substrate includes forming an initial trench that passes through the first layer to the substrate, the initial trench having a diameter that decreases from a first diameter to a second diameter, the second diameter being measured at a distance closer to the substrate than the first diameter; exposing the trench to a dopant via an orthogonal ion implant to form doped regions sidewalls of the trench; and etching the trench to remove at least some of the doped regions.

摘要翻译： 在由衬底和形成在衬底上的第一层形成的半导体器件中形成沟槽的方法包括形成通过第一层到衬底的初始沟槽，初始沟槽的直径从第一直径减小到 第二直径，第二直径在比第一直径更靠近基板的距离处被测量; 通过正交离子注入将沟槽暴露于掺杂剂以形成沟槽的掺杂区域侧壁; 并蚀刻沟槽以去除至少一些掺杂区域。

公开(公告)号：US20070111466A1

公开(公告)日：2007-05-17

申请号：US11164290

申请日：2005-11-17

申请人： Ronald DellaGuardia ,  Daniel Edelstein ,  Habib Hichri ,  Vincent McGahay

发明人： Ronald DellaGuardia ,  Daniel Edelstein ,  Habib Hichri ,  Vincent McGahay

IPC分类号： H01L21/76

CPC分类号： H01L21/31144 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/76808

摘要： Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the at most lightly crosslinked polymer and planarizing layer are removed, the at most lightly crosslinked polymer removal is easier than removal of the planarizing layer, i.e., crosslinked polymer, and does not damage the surrounding dielectric compared to removal chemistries used for the crosslinked polymer.

摘要翻译： 公开了减少在去除平坦化层例如交联聚合物期间对超低介电常数（ULK）电介质的损伤的方法。 该方法至少部分地用至少轻度交联的聚合物填充开口，随后是平坦化层。 当除去至多轻度交联的聚合物和平坦化层时，与用于交联聚合物的去除化学物质相比，去除至多轻度交联的聚合物去除比去除平坦化层即交联聚合物更容易，并且不损坏周围的电介质 。

公开(公告)号：US08822342B2

公开(公告)日：2014-09-02

申请号：US12981519

申请日：2010-12-30

申请人： Ravi Prakash Srivastava ,  Oluwafemi. O. Ogunsola ,  Craig Child ,  Muhammed Shafi Kurikka Valappil Pallachalil ,  Habib Hichri ,  Matthew Angyal ,  Hideshi Miyajima

发明人： Ravi Prakash Srivastava ,  Oluwafemi. O. Ogunsola ,  Craig Child ,  Muhammed Shafi Kurikka Valappil Pallachalil ,  Habib Hichri ,  Matthew Angyal ,  Hideshi Miyajima

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76813 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1036 ,  H01L2221/1063

摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供用具有第一和第二区域的电介质层制备的衬底。 第一区域包括宽的特征，第二区域包括狭窄的特征。 在宽和窄特征的底部之间存在深度增量。 在基板上形成非保形层，并且在第一和第二区域中对宽且窄的沟槽进行排列。 去除非保形层。 去除非保形层减少了第一和第二区域中宽和窄特征的底部之间的深度增量。

公开(公告)号：US20120153474A1

公开(公告)日：2012-06-21

申请号：US12975327

申请日：2010-12-21

申请人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

发明人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

IPC分类号： H01L21/283 ,  H01L29/49

CPC分类号： H01L21/31138 ,  H01L21/32139

摘要： A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.

摘要翻译： 集成电路系统的制造方法包括：提供基板; 在衬底上形成多晶硅层; 在所述多晶硅层上形成抗反射涂层; 将抗反射涂层图案蚀刻到抗反射涂层中，在多晶硅层上留下抗反射涂层残留物; 以及用包括溴化氢，氯和氧的蚀刻剂气体混合物蚀刻抗反射涂层残余物以除去抗反射涂层残余物以减轻多晶硅突起的形成。