公开(公告)号：US5574330A

公开(公告)日：1996-11-12

申请号：US398807

申请日：1995-03-06

申请人： Kenichi Matsuda ,  Takeshi Mera ,  Satoru Endo

发明人： Kenichi Matsuda ,  Takeshi Mera ,  Satoru Endo

IPC分类号： H01J9/18 ,  H01J29/48 ,  H01J29/70 ,  H01J29/46

CPC分类号： H01J29/485 ,  H01J2229/502

摘要： There is provided an electron gun which has an assembly precision improved by the reduction of deformation of an electrode during assembly as well as good focusing performance due to the elimination of positional deviation of electron beams. There is also provided a method of assembling such an electron gun. The electron gun comprises a composite electrode including at least two electrode elements united together and a plurality of electrodes sequentially arrayed along a single axis at predetermined intervals. In the electron gun, opposed faces of the electrode elements of the composite electrode are perpendicular to the axis and the opposed faces are provided with projections 1a and 1b which serve to constitute the composite electrode when the projections are united together in opposed relationship to each other.

摘要翻译： 提供了一种电子枪，其具有通过组装期间电极的变形减小以及由于消除电子束的位置偏差而导致良好的聚焦性能而提高的组装精度。 还提供了组装这种电子枪的方法。 电子枪包括复合电极，其包括至少两个电极元件结合在一起，并且多个电极以预定间隔沿着单个轴顺序排列。 在电子枪中，复合电极的电极元件的相对面垂直于轴线，并且相对面设有突起1a和1b，当突起彼此相对关联时，它们用于构成复合电极 。

公开(公告)号：US5677590A

公开(公告)日：1997-10-14

申请号：US707529

申请日：1996-09-04

申请人： Kenichi Matsuda ,  Takeshi Mera ,  Satoru Endo

发明人： Kenichi Matsuda ,  Takeshi Mera ,  Satoru Endo

IPC分类号： H01J9/18 ,  H01J29/48 ,  H01J29/70 ,  H01J29/46

CPC分类号： H01J29/485 ,  H01J2229/502

摘要： An electron gun which has an assembly precision improved by the reduction of deformation of an electrode during assembly as well as good focusing performance due to the elimination of positional deviation of electron beams. The electron gun comprises a composite electrode including at least two electrode elements united together and a plurality of electrodes sequentially arrayed along a single axis at predetermined intervals. In the electron gun, opposed faces of the electrode elements of the composite electrode are perpendicular to the axis and the opposed faces are provided with projections which serve to constitute the composite electrode when the projections are united together in opposed relationship to each other.

摘要翻译： 由于消除电子束的位置偏差，电子枪具有通过组装时电极的变形减小以及良好的聚焦性能而具有改善的组装精度。 电子枪包括复合电极，其包括至少两个电极元件结合在一起，并且多个电极以预定间隔沿着单个轴顺序排列。 在电子枪中，复合电极的电极元件的相对面垂直于轴线，并且相对的面设置有突起，当突起彼此相对关联时，用于构成复合电极的突起。

公开(公告)号：US07773646B2

公开(公告)日：2010-08-10

申请号：US12280603

申请日：2007-03-14

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

IPC分类号： H01S3/00

CPC分类号： H01S5/042

摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

摘要翻译： 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流 被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

公开(公告)号：US07738525B2

公开(公告)日：2010-06-15

申请号：US12065991

申请日：2007-07-09

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/162 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3404

摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

摘要翻译： 半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。 在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。 窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。 布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

公开(公告)号：US07719588B2

公开(公告)日：2010-05-18

申请号：US11836265

申请日：2007-08-09

申请人： Kazutoshi Onozawa ,  Kenichi Matsuda

发明人： Kazutoshi Onozawa ,  Kenichi Matsuda

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L21/44

CPC分类号： H01L27/14627 ,  G02B5/1885 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14683 ,  H01L27/14685 ,  H01L41/0533 ,  H01L2924/0002 ,  H04N5/2254 ,  H04N5/2257 ,  H04N5/33 ,  H01L2924/00

摘要： Provided is a solid-state imaging device which is able to achieve reductions in size and in thickness of the device, while being also able to have an auxiliary function of imaging lenses, an infrared cut filter, an antireflection function, a dust preventing function for downsizing of packaging, and an infrared light imaging function for capturing images at night. The solid-state imaging device includes: a light-collecting element which collects incident light; and a transparent thin film formed above the light-collecting element, and an air gap is formed between the light-collecting element and the transparent thin film. On the transparent thin film, the auxiliary function of imaging lenses, the infrared cut filter, the antireflection function, the dust preventing function for downsizing of packaging, and the infrared light imaging function for capturing images at night are integrated.

摘要翻译： 提供一种能够实现装置的尺寸和厚度的减小的固态成像装置，同时还能够具有成像透镜，红外截止滤光器，抗反射功能，防尘功能， 包装尺寸缩小，夜间拍摄图像的红外光成像功能。 固体摄像装置包括：收集入射光的光收集元件; 以及形成在集光元件上方的透明薄膜，并且在聚光元件和透明薄膜之间形成气隙。 在透明薄膜上，集成了成像透镜的辅助功能，红外截止滤光片，防反射功能，用于小型化封装的防尘功能以及用于在夜间拍摄图像的红外光成像功能。

公开(公告)号：US06458620B1

公开(公告)日：2002-10-01

申请号：US09982717

申请日：2001-10-18

申请人： Kenichi Matsuda

发明人： Kenichi Matsuda

IPC分类号： H01L2100

CPC分类号： H01L31/103 ,  H01L31/02164 ,  H01L31/022416 ,  H01L31/105 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photo-detecting device includes: a semiconductor substrate; a multilayer structure formed on the semiconductor substrate; an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting region having a central portion; and a light-shielding mask formed on the semiconductor substrate so as to shield from light a portion of the island-like photo-detecting region at least excluding the central portion. The light-shielding mask comprises an upper metal film and a lower metal film, and the upper metal film and the lower metal film are at least partially isolated by an insulative film, the upper metal film and the lower metal film having different patterns.

公开(公告)号：US06392283B1

公开(公告)日：2002-05-21

申请号：US09449538

申请日：1999-11-29

申请人： Kenichi Matsuda

发明人： Kenichi Matsuda

IPC分类号： H01L3106

CPC分类号： H01L31/02327 ,  G02B6/4214 ,  Y10S438/928 ,  Y10S438/978

摘要： A light absorbing layer composed of intentionally undoped n-type InGaAs and a window layer composed of intentionally undoped n-type InP are formed sequentially on a first principal surface of a semiconductor substrate composed of n-type InP. A cathode is provided on a p-type diffused region forming an island pattern in the window layer, while an anode is provided on a second principal surface of the semiconductor substrate. A side edge portion of the second principal surface of the semiconductor substrate is formed with a gradient portion having an exposed surface with a (112) plane orientation and forming an angle of 35.3° with respect to the second principal surface. The gradient portion is formed to have a mirrored surface by using an etching solution containing hydrochloric acid and nitric acid at a volume ratio of approximately 5:1 to 3:1.

公开(公告)号：US5796714A

公开(公告)日：1998-08-18

申请号：US533364

申请日：1995-09-25

申请人： Toyoji Chino ,  Kenichi Matsuda ,  Takayuki Yoshida ,  Kenzo Hatada

发明人： Toyoji Chino ,  Kenichi Matsuda ,  Takayuki Yoshida ,  Kenzo Hatada

IPC分类号： H01S5/02 ,  H01S5/026 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/18305 ,  H01S5/423 ,  H01L2224/73204 ,  H01L2224/81 ,  H01S5/0207 ,  H01S5/0216 ,  H01S5/02228 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/0261 ,  H01S5/0425

摘要： The optical module of the invention includes: a first substrate; a vertical-cavity surface-emitting laser including an upper surface, a bottom surface and a semiconductor multi-layered structure including at least a light-emitting layer, the vertical-cavity surface-emitting laser being supported on the first substrate; an electrode structure electrically connected with the bottom surface of the vertical-cavity surface-emitting laser, the electrode structure being supported on the first substrate; and a second substrate including a first bump and a second bump. In the optical module, an upper surface of the electrode structure and the upper surface of the vertical-cavity surface-emitting laser jut out from the first substrate. The second substrate is positioned with respect to the first substrate so that the first bump and the second bump come into contact with an upper surface of the electrode structure and the upper surface of the vertical-cavity surface-emitting laser, respectively.

摘要翻译： 本发明的光模块包括：第一基板; 垂直腔表面发射激光器，其包括上表面，底表面和至少包括发光层的半导体多层结构，所述垂直腔表面发射激光器被支撑在所述第一基板上; 与所述垂直腔表面发射激光器的底面电连接的电极结构，所述电极结构被支撑在所述第一基板上; 以及包括第一凸块和第二凸块的第二基板。 在光学模块中，电极结构的上表面和垂直腔表面发射激光器的上表面从第一基板突出。 第二基板相对于第一基板定位，使得第一凸块和第二凸块分别与电极结构的上表面和垂直腔表面发射激光器的上表面接触。

公开(公告)号：US5679964A

公开(公告)日：1997-10-21

申请号：US498096

申请日：1995-07-05

申请人： Yasuhiro Kobayashi ,  Kenichi Matsuda

发明人： Yasuhiro Kobayashi ,  Kenichi Matsuda

IPC分类号： H01L31/153 ,  H01S5/026 ,  H01S5/183 ,  H01L27/15

CPC分类号： B82Y20/00 ,  H01L31/153 ,  H01S5/18305 ,  H01S5/0261 ,  H01S5/0609 ,  H01S5/347 ,  H01S5/423 ,  H01S5/5072

摘要： The optoelectronic integrated device includes a semiconductor substrate, a vertical-cavity surface-emitting semiconductor laser formed on the semiconductor substrate, a phototransistor stacked over the vertical-cavity surface emitting semiconductor laser, for driving the vertical-cavity surface-emitting semiconductor laser, and a semiconductor buffer structure interposed between the vertical-cavity surface-emitting semiconductor laser and the phototransistor. The vertical-cavity surface-emitting semiconductor laser includes: a bottom semiconductor mirror; a top semiconductor mirror; and an active region interposed between the bottom semiconductor mirror and the top semiconductor mirror and having a strained quantum well structure for emitting light having a wavelength of .lambda.. The phototransistor includes: a collector layer; an emitter layer; and a base layer interposed between the collector layer and the emitter layer and absorbing light having a wavelength of .lambda.. The semiconductor buffer structure includes: a first surface facing the phototransistor and having a lattice constant substantially lattice-matching with the base layer, and a second surface facing the vertical-cavity surface-emitting semiconductor laser.

摘要翻译： 光电子集成器件包括半导体衬底，形成在半导体衬底上的垂直腔表面发射半导体激光器，堆叠在垂直腔表面发射半导体激光器上的光电晶体管，用于驱动垂直腔表面发射半导体激光器;以及 插入在垂直腔表面发射半导体激光器和光电晶体管之间的半导体缓冲结构。 垂直腔表面发射半导体激光器包括：底部半导体反射镜; 顶部半导体镜; 以及插入在底部半导体反射镜和顶部半导体反射镜之间并且具有用于发射波长为λ的光的应变量子阱结构的有源区。 光电晶体管包括：集电极层; 发射极层; 以及插入在集电极层和发射极层之间并吸收波长为λ的光的基极层。 半导体缓冲结构包括：面对光电晶体管的第一表面，具有与基底层基本上晶格匹配的晶格常数，以及面对垂直腔表面发射半导体激光器的第二表面。

公开(公告)号：US5315105A

公开(公告)日：1994-05-24

申请号：US100076

申请日：1993-07-29

申请人： Kenichi Matsuda ,  Jun Shibata

发明人： Kenichi Matsuda ,  Jun Shibata

IPC分类号： G02F3/02 ,  G06C3/00 ,  H01L27/144 ,  H01L27/15 ,  H01L31/10 ,  H03K19/14 ,  H01J40/14

CPC分类号： H01L27/1443 ,  H01L27/15

摘要： An optical operational memory device comprises a light-emitting device, a first and second phototransistors, and a load resistor. The light-emitting device and the first phototransistor are connected electrically in series to form an optical bistable switch based on optical positive feedback. The second phototransistor is connected in parallel to the optical bistable switch, and the load resistor is connected in series to the optical bistable switch. The time constant given by the product of the current gain of the second phototransistor, the base-collector capacitance of the second phototransistor, and the resistance of the load resistor is larger than the period required for recombination of the excess majority carriers in the base of the first phototransistor. A single optical beam modulated with pulse signals is input to the first and the second phototransistors simultaneously. The optical pulse with a peak power in a predetermined range turns the optical bistable switch on, and the pulse with higher peak power turns the optical bistable switch off.

摘要翻译： 光学操作存储器件包括发光器件，第一和第二光电晶体管和负载电阻器。 发光器件和第一光电晶体管串联电连接以形成基于光学正反馈的光学双稳态开关。 第二光电晶体管与光双稳态开关并联连接，负载电阻与光双稳态开关串联。 由第二光电晶体管的电流增益，第二光电晶体管的基极集电极电容和负载电阻的电阻的乘积给出的时间常数大于基极中的多余载流子的复合所需的时间 第一个光电晶体管。 用脉冲信号调制的单个光束同时输入到第一和第二光电晶体管。 具有预定范围内的峰值功率的光脉冲使光学双稳态开关导通，并且具有较高峰值功率的脉冲使光学双稳态开关断开。