公开(公告)号：US09382611B2

公开(公告)日：2016-07-05

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： B28B1/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US09064853B2

公开(公告)日：2015-06-23

申请号：US13572847

申请日：2012-08-13

申请人： Masafumi Nomura ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Takashi Hamochi ,  Shunpei Yamazaki

发明人： Masafumi Nomura ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Takashi Hamochi ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.

摘要翻译： 提供了包括氧化物半导体并且包括更优异的栅极绝缘膜的半导体器件。 本发明提供了一种从投入实际使用的大规模生产技术的膜结构，工艺条件，制造装置等的变化少的高可靠性和电稳定性的半导体装置。 提供一种半导体器件的制造方法。 半导体器件包括形成在栅电极上的栅电极，栅绝缘膜和形成在栅极绝缘膜上的氧化物半导体膜。 栅极绝缘膜包括在氮氧化硅膜上形成的氮氧化硅膜，氧氮化硅膜和在氧氮化硅膜上形成的金属氧化物膜。 氧化物半导体膜形成在金属氧化物膜上并与其接触。

公开(公告)号：US08654272B2

公开(公告)日：2014-02-18

申请号：US12848404

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama ,  Masashi Tsubuku

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama ,  Masashi Tsubuku

IPC分类号： G02F1/136 ,  G02F1/1343

CPC分类号： H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层。 在驱动电路部分的薄膜晶体管中，半导体层夹在栅电极层和导电层之间。 第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。

公开(公告)号：US07835735B2

公开(公告)日：2010-11-16

申请号：US10853506

申请日：2004-05-26

申请人： Kenichi Okazaki

发明人： Kenichi Okazaki

IPC分类号： H04W4/00

CPC分类号： H04L65/605 ,  H04L12/2856 ,  H04L29/06027 ,  H04L51/066 ,  H04L51/38 ,  H04L67/28 ,  H04L67/2823 ,  H04L67/303 ,  H04L69/08 ,  H04W4/00 ,  H04W8/02 ,  H04W8/18 ,  H04W40/02 ,  H04W88/14

摘要： A roaming-service-enabling system is provided which enables a user to gain access to desired contents and/or to be provided with desired service from any kind of internet connecting device. An SRF (Service Roaming Framework) server has a network controlling unit, subscriber profile storing unit, and subscriber authenticating unit. The subscriber profile storing unit stores information about a type of an access terminal that a user is able to use and subscriber profile information used to identify an access unit corresponding to the access terminal. The network controlling unit transmits data fed from a service providing server to the access terminal by making the data be matched to the type of the access terminal and access unit according to subscriber profile information being stored by the subscriber profile storing unit.

摘要翻译： 提供漫游服务使能系统，其使得用户能够从任何种类的互联网连接设备获得对期望内容的访问和/或提供期望的服务。 SRF（服务漫游框架）服务器具有网络控制单元，用户简档存储单元和用户认证单元。 订户简档存储单元存储关于用户能够使用的接入终端的类型的信息和用于标识对应于接入终端的接入单元的用户简档信息。 网络控制单元根据由用户简档存储单元存储的用户简档信息，通过使数据与接入终端和接入单元的类型匹配，将从服务提供服务器馈送的数据发送到接入终端。

公开(公告)号：US20100215970A1

公开(公告)日：2010-08-26

申请号：US12678509

申请日：2008-09-18

申请人： Toru Imori ,  Yoshiyuki Hisumi ,  Junichi Ito ,  Tsukasa Torimoto ,  Kenichi Okazaki ,  Susumu Kuwabata

发明人： Toru Imori ,  Yoshiyuki Hisumi ,  Junichi Ito ,  Tsukasa Torimoto ,  Kenichi Okazaki ,  Susumu Kuwabata

IPC分类号： B32B15/02 ,  B05D1/36 ,  B05D5/00

CPC分类号： B22F1/0018 ,  B82Y30/00 ,  H01L21/288 ,  Y10T428/24917 ,  Y10T428/31663 ,  Y10T428/31667

摘要： A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method.

摘要翻译： 金属纳米颗粒可以均匀地负载并固定在基材上。 因此，公开了一种支撑纳米金属粒子的方法，其包括：将具有至少一个能够捕获金属的官能团的硅烷偶联剂（例如，咪唑基，氨基，二氨基，巯基， 和乙烯基），然后使硅烷偶联剂与金属（例如金，铂，银，铜，钯，镍，钴）的纳米颗粒接触，其中硅烷偶联剂可以 可以通过唑类化合物与环氧硅烷化合物的反应来制造，其中与硅烷偶联剂接触的金属纳米颗粒优选用离子液体包覆。 还公开了通过该方法制造的具有负载在其上的金属纳米粒子的基板。

公开(公告)号：US09660092B2

公开(公告)日：2017-05-23

申请号：US13592942

申请日：2012-08-23

申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78696

摘要： Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

公开(公告)号：US08889477B2

公开(公告)日：2014-11-18

申请号：US13603484

申请日：2012-09-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： H01L21/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 制造包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US08502220B2

公开(公告)日：2013-08-06

申请号：US12848406

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/36

CPC分类号： H01L27/1225 ,  H01L21/385 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层，每个源电极层和漏极电极层的端部位于比半导体层的端部更靠内侧的形状。 在驱动电路部分的薄膜晶体管中，半导体层设置在栅电极层和导电层之间。 第一布线和第二布线通过氧化物导电层在设置在栅极绝缘层中的开口中电连接。

公开(公告)号：US20120312681A1

公开(公告)日：2012-12-13

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/34 ,  B28B1/00

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US08324699B2

公开(公告)日：2012-12-04

申请号：US12969789

申请日：2010-12-16

申请人： Mitsuhiro Ichijo ,  Kenichi Okazaki ,  Tetsuhiro Tanaka ,  Takashi Ohtsuki ,  Seiji Yasumoto ,  Shunpei Yamazaki

发明人： Mitsuhiro Ichijo ,  Kenichi Okazaki ,  Tetsuhiro Tanaka ,  Takashi Ohtsuki ,  Seiji Yasumoto ,  Shunpei Yamazaki

IPC分类号： H01L27/14

CPC分类号： H01L27/1266 ,  C23C16/02 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/31155 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13

摘要： A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.

摘要翻译： 提供了用作半导体集成电路的绝缘膜的绝缘膜的制造方法，其即使厚度小也能够确保其可靠性。 特别地，提供了一种在低基板温度下在具有绝缘表面的基板上制造高品质绝缘膜的方法，该绝缘表面可以被扩大。 将甲硅烷气体（SiH 4），一氧化二氮（N 2 O）和稀有气体引入室中以在高于或等于10Pa且低于或等于30Pa的压力下产生高密度等离子体，使得绝缘 膜形成在具有绝缘表面的基板上。 之后，停止供给单硅烷气体，一边不暴露于空气中一氧化二氮（N2O）和稀有气体被引入到绝缘膜的表面进行等离子体处理。