Grid for lead storage battery and method for its production
    1.
    发明授权
    Grid for lead storage battery and method for its production 失效
    铅蓄电池电网及其生产方法

    公开(公告)号:US4782585A

    公开(公告)日:1988-11-08

    申请号:US425256

    申请日:1982-09-28

    IPC分类号: H01M4/73 H01M4/82 H01M4/72

    摘要: A grid has a grid structure (11) made of acid proof synthetic resin. A grid rib structure constitutes the grid structure and part of the grid rib structure inclusive of at least a connector lug (12) and a portion contiguous thereto is immersed in molten lead or lead alloy to form a lead or lead alloy film (16) coated on the grid structure. The portion to be coated with the lead or lead alloy film includes part of a frame rib (13) and an active material support rib (14, 15) which constitute the grid rib structure, and the active material support rib constituting the grid mesh is partly cut off (18) to enhance the coating of the lead or lead alloy film, the reduction in weight of the grid and ease of working for the coating of the lead or lead alloy film on the grid structure.

    摘要翻译: 栅格具有由耐酸合成树脂制成的栅格结构(11)。 网格肋结构构成网格结构,并且网格肋结构的一部分包括至少一个连接器凸耳(12),并且与其相邻的部分浸入熔融的铅或铅合金中以形成涂覆的铅或铅合金膜(16) 在网格结构上。 用铅或铅合金膜涂覆的部分包括构成网格肋结构的框架肋(13)和活性材料支撑肋(14,15)的一部分,构成网格的活性材料支撑肋是 部分切断(18)以增强铅或铅合金膜的涂层,减小栅格重量,并且易于在栅格结构上涂覆铅或铅合金膜。

    Lead battery and lead battery storage method
    2.
    发明申请
    Lead battery and lead battery storage method 失效
    铅电池和铅蓄电池存储方式

    公开(公告)号:US20070184349A1

    公开(公告)日:2007-08-09

    申请号:US10588849

    申请日:2005-03-17

    摘要: This invention provides a lead battery that becomes usable by injecting an electrolyte thereinto. The battery includes: positive and negative electrode plates each having a grid comprising a Pb—Ca based alloy; separators that separate the positive electrode plates from the negative electrode plates; the electrolyte comprising sulfuric acid; and a battery container accommodating the positive and negative electrode plates, the separators, and the electrolyte. The battery container is sealed, and part of the positive and negative electrode plates is immersed in the electrolyte. The height Y0 of the positive and negative electrode plates and the distance Y1 from the bottom of the positive and negative electrode plates to the level of the electrolyte satisfy the relation: 15≦Y1/Y0×100≦60.

    摘要翻译: 本发明提供一种通过向其中注入电解质而可用的铅电池。 电池包括:正极板和负极板,每个板具有包含Pb-Ca基合金的栅格; 将正极板与负极板分离的分离器; 所述电解质包含硫酸; 以及容纳正极板和负极板,隔板和电解质的电池容器。 将电池容器密封,将正极板和负极板的一部分浸入电解液中。 正极板和负极板的高度Y 0 <0>和从正极板和负极板的底部到电解液层的距离Y 1 <1>满足以下关系: <?in-line-formula description =“In-line Formulas”end =“lead”?> 15 <= Y / Y x100 <= 60。 ?in-line-formula description =“In-line Formulas”end =“tail”?>

    Lead battery and lead battery storage method
    3.
    发明授权
    Lead battery and lead battery storage method 失效
    铅电池和铅蓄电池存储方式

    公开(公告)号:US07879490B2

    公开(公告)日:2011-02-01

    申请号:US10588849

    申请日:2005-03-17

    摘要: This invention provides a lead battery that becomes usable by injecting an electrolyte thereinto. The battery includes: positive and negative electrode plates each having a grid comprising a Pb—Ca based alloy; separators that separate the positive electrode plates from the negative electrode plates; the electrolyte comprising sulfuric acid; and a battery container accommodating the positive and negative electrode plates, the separators, and the electrolyte. The battery container is sealed, and part of the positive and negative electrode plates is immersed in the electrolyte. The height Y0 of the positive and negative electrode plates and the distance Y1 from the bottom of the positive and negative electrode plates to the level of the electrolyte satisfy the relation: 15≦Y1/Y0×100≦60.

    摘要翻译: 本发明提供一种通过向其中注入电解质而可用的铅电池。 电池包括:正极板和负极板,每个板具有包含Pb-Ca基合金的栅格; 将正极板与负极板分离的分离器; 所述电解质包含硫酸; 以及容纳正极板和负极板,隔板和电解质的电池容器。 将电池容器密封,将正极板和负极板的一部分浸入电解液中。 正极板和负极板的高度Y0以及从正极板和底板的底部到电解液层的距离Y1满足关系式:15&nlE; Y1 / Y0×100&nlE; 60。

    Lead-Acid Rechargeable Battery
    4.
    发明申请
    Lead-Acid Rechargeable Battery 审中-公开
    铅酸充电电池

    公开(公告)号:US20090061290A1

    公开(公告)日:2009-03-05

    申请号:US11887921

    申请日:2006-03-27

    IPC分类号: H01M2/12 H01M10/06

    摘要: A liquid-inlet cap (13) is installed in a liquid inlet (11) provided in a battery casing, the liquid-inlet cap (13) having a ventilating hole (12) for expelling a gas from the inside of a battery to the outside of the battery. A control valve section (21) is installed inside a cylindrical body (20) of the liquid-inlet cap (13) separately from the cylindrical body (20) and responds to the internal pressure of the battery to form a ventilating passage from a vent hole (22) provided on one end to a ventilating opening (28) provided on the other end.

    摘要翻译: 液体入口盖(13)安装在设置在电池壳体内的液体入口(11)中,液体入口盖(13)具有通气孔(12),用于将气体从电池内部排出到通风孔 在电池外面。 控制阀部分(21)与圆筒体(20)分开地安装在液体入口盖(13)的圆柱体(20)的内部,并响应于电池的内部压力,以形成通气孔 一端设置在设置在另一端的通风口(28)上的孔(22)。

    Process for producing a grid for use in lead acid batteries
    5.
    发明授权
    Process for producing a grid for use in lead acid batteries 失效
    生产用于铅酸蓄电池的电网的工艺

    公开(公告)号:US4805277A

    公开(公告)日:1989-02-21

    申请号:US671354

    申请日:1987-12-21

    IPC分类号: H01M4/68 H01M4/74 H01M4/84

    摘要: The present invention provides a process for producing a grid for use in lead acid batteries which comprises superposing a sheet or a foil of a lead alloy on a sheet bar composed of a lead-calcium alloy, said sheet or foil of lead alloy having a composition different from that of the sheet bar and having a thickness smaller than that of the sheet bar, followed by integrating the two materials by cold rolling process to form an elementary sheet and then subjecting the elementary sheet to an expanding or punching processing.The grid obtained according to this process is improved in the charging recovery characteristics after standing in a superdischarged state and in the corrosion resistance of grid at high temperatures without deteriorating the maintenance-free characteristics of the lead-calcium alloy itself.

    摘要翻译: 本发明提供了一种用于铅酸电池的栅格的制造方法,其特征在于,在由铅 - 钙合金构成的片材棒上叠加铅合金的片或箔,所述铅合金的所述片或箔具有组成 不同于片材的厚度,其厚度小于片材的厚度,然后通过冷轧过程对两种材料进行一体化以形成基本片材,然后对基材片材进行扩张或冲压加工。 根据该方法获得的栅格在超级放电状态下放置后的充电恢复特性以及栅极在高温下的耐腐蚀性得到改善,而不会降低铅 - 钙合金本身的免维护特性。

    Grid for use in lead acid batteries and process for producing same
    6.
    发明授权
    Grid for use in lead acid batteries and process for producing same 失效
    用于铅酸电池的电网及其制造方法

    公开(公告)号:US4939051A

    公开(公告)日:1990-07-03

    申请号:US282733

    申请日:1988-12-12

    IPC分类号: H01M4/68 H01M4/74 H01M4/84

    摘要: The present invention provides a process for producing a grid for use in lead acid batteries which comprises superposing, on a sheet bar of a lead-calcium alloy, a sheet or a foil of a lead-silver-tin alloy consisting of 0.01-1.0% by weight of tin and a residual quantity of lead and having a thickness smaller than that of the sheet bar, pressure-bonding both the materials by cold rolling to prepare an elementary sheet, and subjecting the elementary sheet to an expanding process or a punching process.The grid obtained according to the process of the invention is improved in the charge-discovery characteristics after overdischarging and standing and does not deteriorate the maintenance-free characteristic of lead-calcium-tin alloy.

    摘要翻译: 本发明提供了一种用于铅酸电池的栅格的制造方法,其包括在铅 - 钙合金的片材条上叠加由0.01〜1.0%的铅 - 银 - 锡合金构成的铅 - 银 - 锡合金的片或箔, 的锡和剩余量的铅,其厚度小于片材的厚度,通过冷轧压制两种材料以制备基本片材,并对基本片材进行膨胀过程或冲压加工 。 根据本发明的方法获得的栅格在过放电和放置后的电荷发现特性得到改善,并且不劣化铅 - 钙 - 锡合金的免维护特性。

    Bipolar transistor in bipolar-CMOS technology
    7.
    发明授权
    Bipolar transistor in bipolar-CMOS technology 有权
    双极晶体管在双极CMOS技术

    公开(公告)号:US08536002B2

    公开(公告)日:2013-09-17

    申请号:US13567552

    申请日:2012-08-06

    IPC分类号: H01L21/8238

    摘要: A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.

    摘要翻译: 通过使用非选择性外延工艺形成双极型晶体管的基极层,使得基极层在集电极有源区域上具有单一结晶区域和多晶硅层,形成包含双极晶体管和MOS晶体管的集成电路的工艺 区域,并且同时注入基极层的MOS栅极层和多晶区域,使得基极 - 集电极结延伸到小于场氧化物深度的三分之一的衬底中,并且垂直累积掺杂 基极层的多晶区域的密度在MOS栅极的垂直累积掺杂密度的80%至125%之间。 包含双极晶体管和通过所描述的工艺形成的MOS晶体管的集成电路。

    Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication
    8.
    发明授权
    Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication 有权
    具有第一双极器件和第二双极器件的半导体器件及其制造方法

    公开(公告)号:US08450179B2

    公开(公告)日:2013-05-28

    申请号:US11670729

    申请日:2007-02-02

    IPC分类号: H01L21/331

    摘要: A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.

    摘要翻译: 一种用于制造具有相同掺杂剂类型的第一和第二双极器件的半导体器件的方法包括:在半导体层上沉积介电层,在电介质层上沉积栅极导体层,限定两个双极器件的基极区域, 栅极导体层和电介质层,在栅极导体层和基极区域的暴露的半导体层上沉积基底层,在基底层上沉积绝缘层,形成光致抗蚀剂层并限定两者的发射极区域 去除发射极区域中的光致抗蚀剂层,从而形成两个发射器窗口,掩蔽第一双极器件的发射极窗口,并将第二双极器件的基极区域中的基极层通过相关的发射极窗口暴露于另外的发射体注入 。

    Multi-column electron beam exposure apparatus and multi-column electron beam exposure method
    9.
    发明授权
    Multi-column electron beam exposure apparatus and multi-column electron beam exposure method 有权
    多列电子束曝光装置和多列电子束曝光方法

    公开(公告)号:US08222619B2

    公开(公告)日:2012-07-17

    申请号:US12586717

    申请日:2009-09-25

    IPC分类号: A61N5/00 G21G5/00

    摘要: A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

    摘要翻译: 多列电子束曝光装置包括:多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器,并且用于调节各列电池的电子束,使得在列中使用的电子束的性质 细胞可以大致相同。 电子束特性可以是要发射的电子束的光束位置,光束强度和光束形状中的任何一个。 电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

    Electron beam lithography apparatus and electron beam lithography method
    10.
    发明申请
    Electron beam lithography apparatus and electron beam lithography method 有权
    电子束光刻设备和电子束光刻法

    公开(公告)号:US20110226967A1

    公开(公告)日:2011-09-22

    申请号:US13068995

    申请日:2011-05-25

    IPC分类号: G21K5/00

    摘要: An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.

    摘要翻译: 一种电子束光刻设备,包括:存储器,用于根据设备图案所要求的准确度,对分配了等级的绘图图形进行数据存储;绘图模式调整单元,基于该等级生成分割图形的数据;结算等待时间调整 基于等级确定结算等待时间的单元,以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。 绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限,并且基于上限划分绘图图案。