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36 条记录 (耗时 0.025 秒)

    Exposure method and apparatus
    1.
    发明授权
    Exposure method and apparatus 失效

    公开(公告)号：US5448332A

    公开(公告)日：1995-09-05

    申请号：US345325

    申请日：1994-11-21

    申请人： Yasuyuki Sakakibara ,  Yasuaki Tanaka ,  Seiro Murakami ,  Kenji Nishi

    发明人： Yasuyuki Sakakibara ,  Yasuaki Tanaka ,  Seiro Murakami ,  Kenji Nishi

    IPC分类号： G03F7/207 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  G03B27/42 ,  H01J1/20

    CPC分类号： G03F7/70358 ,  G03F9/7026

    摘要： An apparatus for exposing a pattern, formed on a mask, on each of a plurality of partitioned areas on a photosensitive substrate by a step-and-repeat scheme includes a projection optical system for projecting the pattern of the mask on the photosensitive substrate, a substrate stage for holding the photosensitive substrate and two-dimensionally moving the photosensitive substrate within a plane perpendicular to the optical axis of the projection optical system, a detection unit for projecting a pattern image having a predetermined shape on the photosensitive substrate and photoelectrically detecting light reflected by the photosensitive substrate to detect a position at each of a plurality of points on the photosensitive substrate along the optical axis of the projection optical system, and a measurement unit for, when each of a plurality of measurement points in a partitioned area on which a pattern of the mask is to be exposed next coincides with or approaches the pattern image, detecting an offset amount between an imaging plane of the projection optical system and the next partitioned area along the optical axis during a stepping operation of the substrate stage, wherein the imaging plane and the next partitioned area are relatively moved along the optical axis in accordance with the measured offset amount before the pattern of the mask is exposed on the next partitioned area.

    Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system
    2.
    发明授权
    Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system 失效
    通过控制投影光学系统的透镜元件的温度来改变设备的聚焦的投射曝光设备

    公开(公告)号：US5883704A

    公开(公告)日：1999-03-16

    申请号：US689233

    申请日：1996-08-06

    申请人： Kenji Nishi ,  Kazuo Ushida ,  Seiro Murakami ,  Tohru Kiuchi ,  Yasuaki Tanaka

    发明人： Kenji Nishi ,  Kazuo Ushida ,  Seiro Murakami ,  Tohru Kiuchi ,  Yasuaki Tanaka

    IPC分类号： H01L21/027 ,  G03B27/26 ,  G03B27/54 ,  G03F7/20 ,  G03B27/42 ,  G03B27/52

    CPC分类号： G03F7/70891 ,  G03B27/26 ,  G03B27/54 ,  G03F7/70883

    摘要： A projection optical system of a projection exposure apparatus according to the present invention has a plurality of optical members made of glass materials at least one of which has a temperature characteristic of index of refraction different from that of the other glass material. Further, a temperature control device for controlling a temperature of at least one of the optical members is provided. An imaging characteristic of the projection optical system is controlled. The imaging characteristic to be controlled is a non-linear magnification or curvature of field. The temperature control device sets the temperature to be controlled to a variable target temperature determined in accordance with the imaging characteristic of the projection optical system. An exposing operation for transferring a mask pattern to a photosensitive substrate is started after the temperature of the optical member to be controlled reaches a predetermined allowable range of the target temperature.

    摘要翻译： 根据本发明的投影曝光装置的投影光学系统具有多个由玻璃材料制成的光学构件，其中至少一个具有不同于另一玻璃材料的折射率的温度特性。 此外，提供了一种用于控制至少一个光学构件的温度的温度控制装置。 控制投影光学系统的成像特性。 要控制的成像特性是非线性放大或曲率。 温度控制装置将要控制的温度设定为根据投影光学系统的成像特性确定的可变目标温度。 在要控制的光学部件的温度达到目标温度的预定容许范围之后，开始将掩模图案转印到感光基板上的曝光操作。

    Exposure method and apparatus
    4.
    发明授权
    Exposure method and apparatus 失效

    公开(公告)号：US06433872B1

    公开(公告)日：2002-08-13

    申请号：US09276441

    申请日：1999-03-25

    申请人： Kenji Nishi ,  Yasuaki Tanaka ,  Seiro Murakami

    发明人： Kenji Nishi ,  Yasuaki Tanaka ,  Seiro Murakami

    IPC分类号： G01B1100

    CPC分类号： G03F7/70358 ,  G03F9/7026

    摘要： An apparatus for exposing a pattern, formed on a mask, on each of a plurality of partitioned areas on a photosensitive substrate by a step-and-repeat scheme includes a projection optical system for projecting the pattern of the mask on the photosensitive substrate, a substrate stage for holding the photosensitive substrate and two-dimensionally moving the photosensitive substrate within a plane perpendicular to the optical axis of the projection optical system, a detection unit for projecting a pattern image having a predetermined shape on the photosensitive substrate and photoelectrically detecting light reflected by the photosensitive substrate to detect a position at each of a plurality of points on the photosensitive substrate along the optical axis of the projection optical system, and a measurement unit for, when each of a plurality of measurement points in a partitioned area on which a pattern of the mask is to be exposed next coincides with or approaches the pattern image, detecting an offset amount between an imaging plane of the projection optical system and the next partitioned area along the optical axis during a stepping operation of the substrate stage, wherein the imaging plane and the next partitioned area are relatively moved along the optical axis in accordance with the measured offset amount before the pattern of the mask is exposed on the next partitioned area.

    Exposure method and apparatus
    5.
    发明授权
    Exposure method and apparatus 失效

    公开(公告)号：US06608681B2

    公开(公告)日：2003-08-19

    申请号：US10186687

    申请日：2002-07-02

    申请人： Yasuaki Tanaka ,  Seiro Murakami ,  Kenji Nishi

    发明人： Yasuaki Tanaka ,  Seiro Murakami ,  Kenji Nishi

    IPC分类号： G01B1100

    CPC分类号： G03F7/70358 ,  G03F9/7026

    摘要： An apparatus for exposing a pattern, formed on a mask, on each of a plurality of partitioned areas on a photosensitive substrate by a step-and-repeat scheme includes a projection optical system for projecting the pattern of the mask on the photosensitive substrate, a substrate stage for holding the photosensitive substrate and two-dimensionally moving the photosensitive substrate within a plane perpendicular to the optical axis of the projection optical system, a detection unit for projecting a pattern image having a predetermined shape on the photosensitive substrate and photoelectrically detecting light reflected by the photosensitive substrate to detect a position at each of a plurality of points on the photosensitive substrate along the optical axis of the projection optical system, and a measurement unit for, when each of a plurality of measurement points in a partitioned area on which a pattern of the mask is to be exposed next coincides with or approaches the pattern image, detecting an offset amount between an imaging plane of the projection optical system and the next partitioned area along the optical axis during a stepping operation of the substrate stage, wherein the imaging plane and the next partitioned area are relatively moved along the optical axis in accordance with the measured offset amount before the pattern of the mask is exposed on the next partitioned area.

    Exposure method and apparatus
    6.
    发明授权
    Exposure method and apparatus 失效
    曝光方法和装置

    公开(公告)号：US5693439A

    公开(公告)日：1997-12-02

    申请号：US482555

    申请日：1995-06-07

    申请人： Yasuaki Tanaka ,  Seiro Murakami ,  Kenji Nishi

    发明人： Yasuaki Tanaka ,  Seiro Murakami ,  Kenji Nishi

    IPC分类号： G03F7/207 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  G03F7/22

    CPC分类号： G03F7/70358 ,  G03F9/7026

    摘要： An apparatus for exposing a pattern, formed on a mask, on each of a plurality of partitioned areas on a photosensitive substrate by a step-and-repeat scheme includes a projection optical system for projecting the pattern of the mask on the photosensitive substrate, a substrate stage for holding the photosensitive substrate and two-dimensionally moving the photosensitive substrate within a plane perpendicular to the optical axis of the projection optical system, a detection unit for projecting a pattern image having a predetermined shape on the photosensitive substrate and photoelectrically detecting light reflected by the photosensitive substrate to detect a position at each of a plurality of points on the photosensitive substrate along the optical axis of the projection optical system, and a measurement unit for, when each of a plurality of measurement points in a partitioned area on which a pattern of the mask is to be exposed next coincides with or approaches the pattern image, detecting an offset amount between an imaging plane of the projection optical system and the next partitioned area along the optical axis during a stepping operation of the substrate stage, wherein the imaging plane and the next partitioned area are relatively moved along the optical axis in accordance with the measured offset amount before the pattern of the mask is exposed on the next partitioned area.

    摘要翻译： 用于通过步进重复方案将形成在掩模上的图案曝光在感光基板上的多个分隔区域中的图案的装置包括投影光学系统，用于将掩模的图案投影在感光基板上， 用于保持感光基板并在与投影光学系统的光轴垂直的平面内二维移动感光基板的检测单元，用于将具有预定形状的图案图像投影到感光基板上并将光反射的光电检测 通过所述感光基板沿着所述投影光学系统的光轴检测所述感光性基板上的多个点的位置，以及测量单元，其用于当分割区域中的多个测量点中的每一个 掩模的图案下一个曝光与图案图像重合或接近图案图像 在基板载台的步进操作期间，将投影光学系统的成像面与沿着光轴的下一个分割区域之间的偏移量切除，其中成像平面和下一个分割区域沿着光轴相对移动 在掩模的图案之前测量的偏移量暴露在下一个分割区域上。

    Method of depositing titanium nitride thin film and CVD deposition apparatus
    9.
    发明授权
    Method of depositing titanium nitride thin film and CVD deposition apparatus 有权

    公开(公告)号：US06471781B1

    公开(公告)日：2002-10-29

    申请号：US09343702

    申请日：1999-06-30

    申请人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

    发明人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

    IPC分类号： C23C1600

    CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/45561 ,  C23C16/45576 ,  H01L21/28568

    摘要： A CVD apparatus for fabricating a titanium nitride thin film is provided. The apparatus comprises an evacuatable reaction vessel having an interior, a pumping apparatus capable of exhausting the reaction vessel and maintaining the interior of the reaction vessel at a prescribed pressure, a gas feeder for introducing a mixed gas into the reaction vessel, a substrate holder in the reaction vessel for holding a substrate to be coated with a titanium nitride thin film, and a heater for heating the substrate. The gas feeder is equipped with the following components: (a) a vaporizer for vaporizing tetrakis(dialkylamino)titanium (TDAAT) from a liquid source material, (b) a first flow controller capable of setting a flow rate of the vaporized TDAAT to any level within a range of 0.004-02 g/min, (c) a second flow controller capable of setting a flow rate of a first carrier gas mixed with the TDAAT to any level within a range of 100-1000 sccm, (d) a third flow controller capable of setting a flow rate of an added gas reactable with the TDAAT to any level within a range of 10-100 sccm, (e) a fourth flow controller capable of setting a flow rate of a second carrier gas being mixed with the added gas to any level within a range of 10-500 sccm, (f) a first supply conduit for mixing the TDAAT and the first carrier gas to create a first mixed gas and guiding the resulting first mixed gas into the reaction vessel, (g) a second supply conduit for mixing the added gas and the second carrier gas to create a second mixed gas and guiding the resulting second mixed gas into the reaction vessel, and (h) a shower head which is provided with a plurality of first nozzles connected to the first supply conduit, and a plurality of second nozzles connected to the second supply conduit, and which is configured such that the first and second mixed gases are fed into the reaction vessel through the nozzles.

    Surface-position setting apparatus
    10.
    发明授权
    Surface-position setting apparatus 失效
    表面位置设定装置

    公开(公告)号：US5461237A

    公开(公告)日：1995-10-24

    申请号：US280535

    申请日：1994-07-26

    申请人： Shinji Wakamoto ,  Yuji Imai ,  Yasuaki Tanaka

    发明人： Shinji Wakamoto ,  Yuji Imai ,  Yasuaki Tanaka

    IPC分类号： G03F7/20 ,  G03F7/207 ,  G03F9/00 ,  G01N21/86

    CPC分类号： G03F9/7026 ,  G03F7/707 ,  G03F7/70716 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7034

    摘要： In an apparatus which positions an average plane thereof parallel to a best focus plane of a projection optical system even if there is unevenness on a wafer, a leveling stage is tilted on the basis of detection signal from an auto-leveling system and a surface of a shot area on a wafer is positioned in a predetermined tilt position relative to a focus plane of the projection optical system. While such a position being kept unchanged, a deviation between the focus plane of the projection optical system and the surface of the shot area is detected at each of multi-points. Within the shot area, by the use of auto-focus system, an amount of relative tilt between an average plane of the shot area obtained from plural deviations and the focus plane of the projection optical system is calculated, and by the use of thus calculated amount of tilt and the detection signal of auto-leveling system, the focus plane of the projection optical system is positioned in parallel with the average plane of the shot area.

    摘要翻译： 即使在晶片上存在不均匀性的情况下，平均平面平行于投影光学系统的最佳聚焦平面的装置中，也可以根据来自自动调平系统的检测信号和 晶片上的照射区域相对于投影光学系统的聚焦平面定位在预定的倾斜位置。 当这样的位置保持不变时，在多点处检测出投影光学系统的聚焦平面与拍摄区域的表面之间的偏差。 在拍摄区域内，通过使用自动对焦系统，计算从多个偏差获得的拍摄区域的平均平面与投影光学系统的对焦面之间的相对倾斜量，并且通过使用这样计算 自动调平系统的倾斜量和检测信号，投影光学系统的聚焦平面与拍摄区域的平均平面平行。