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    INTEGRATED METHOD FOR REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES IN A PROCESSING SYSTEM
    1.
    发明申请
    INTEGRATED METHOD FOR REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES IN A PROCESSING SYSTEM 有权
    用于从加工系统中的蚀刻基板去除卤素残留物的综合方法

    公开(公告)号：US20080099040A1

    公开(公告)日：2008-05-01

    申请号：US11676161

    申请日：2007-02-16

    申请人： Kenneth J. Bahng ,  Matthew Fenton Davis ,  Thorsten Lill ,  Steven H. Kim

    发明人： Kenneth J. Bahng ,  Matthew Fenton Davis ,  Thorsten Lill ,  Steven H. Kim

    IPC分类号： C25F3/00 ,  B08B7/00

    CPC分类号： H01L21/02071 ,  H01L21/02057 ,  H01L21/67115 ,  Y10S414/135 ,  Y10S438/906 ,  Y10S438/963

    摘要： A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.

    摘要翻译： 提供了用于从基板去除挥发性残留物的方法和系统。 在一个实施方案中，挥发性残余物去除过程在系统中进行，同时在衬底上进行卤素处理过程。 在除卤素处理室和FOUP以外的系统中进行挥发性残渣去除处理。 在一个实施方案中，用于来自基材的挥发性残余物的方法包括提供具有真空密封平台的处理系统，在平台的处理室中处理基材，其中包含卤素的化学物质，以及处理所述平台中的经处理的基材以释放挥发性 来自处理过的底物的残留物。

    Integrated method for removal of halogen residues from etched substrates in a processing system
    2.
    发明授权
    Integrated method for removal of halogen residues from etched substrates in a processing system 有权
    用于在处理系统中从蚀刻的基底去除卤素残留的综合方法

    公开(公告)号：US07846845B2

    公开(公告)日：2010-12-07

    申请号：US11676161

    申请日：2007-02-16

    申请人： Kenneth J. Bahng ,  Matthew Fenton Davis ,  Thorsten Lill ,  Steven H. Kim

    发明人： Kenneth J. Bahng ,  Matthew Fenton Davis ,  Thorsten Lill ,  Steven H. Kim

    IPC分类号： H01L21/302 ,  H01L21/461 ,  B08B6/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00 ,  H01L21/306

    CPC分类号： H01L21/02071 ,  H01L21/02057 ,  H01L21/67115 ,  Y10S414/135 ,  Y10S438/906 ,  Y10S438/963

    摘要： A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.

    摘要翻译： 提供了用于从基板去除挥发性残留物的方法和系统。 在一个实施方案中，挥发性残余物去除过程在系统中进行，同时在衬底上进行卤素处理过程。 在除卤素处理室和FOUP以外的系统中进行挥发性残渣去除处理。 在一个实施方案中，用于来自基材的挥发性残余物的方法包括提供具有真空密封平台的处理系统，在平台的处理室中处理基材，其中包含卤素的化学物质，以及处理所述平台中的经处理的基材以释放挥发性 来自处理过的底物的残留物。

    Two-piece dome with separate RF coils for inductively coupled plasma reactors
    4.
    发明授权
    Two-piece dome with separate RF coils for inductively coupled plasma reactors 失效
    具有用于电感耦合等离子体反应器的单独RF线圈的两片式圆顶

    公开(公告)号：US07651587B2

    公开(公告)日：2010-01-26

    申请号：US11202043

    申请日：2005-08-11

    申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

    发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

    摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

    摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

    In-situ chamber treatment and deposition process
    5.
    发明授权
    In-situ chamber treatment and deposition process 有权
    原位室处理和沉积过程

    公开(公告)号：US08491967B2

    公开(公告)日：2013-07-23

    申请号：US12206705

    申请日：2008-09-08

    申请人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

    发明人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

    IPC分类号： B05D5/12

    CPC分类号： C23C16/34 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/45531 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843

    摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).

    摘要翻译： 本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。 在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。 氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。 游离配体通常在沉积过程中通过氢化或热解形成。 在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属有机化学前体，例如五（二甲基氨基）钽 （PDMAT）。

    IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS
    6.
    发明申请
    IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS 有权
    现场室处理和沉积过程

    公开(公告)号：US20100062614A1

    公开(公告)日：2010-03-11

    申请号：US12206705

    申请日：2008-09-08

    申请人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

    发明人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

    IPC分类号： H01L21/314

    CPC分类号： C23C16/34 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/45531 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843

    摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).

    摘要翻译： 本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。 在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。 氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。 游离配体通常在沉积过程中通过氢化或热解形成。 在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属 - 有机化学前体，例如五（二甲基氨基）钽 （PDMAT）。

    Vortex chamber lids for atomic layer deposition
    9.
    发明授权
    Vortex chamber lids for atomic layer deposition 有权
    涡流室盖用于原子层沉积

    公开(公告)号：US07780789B2

    公开(公告)日：2010-08-24

    申请号：US11923589

    申请日：2007-10-24

    申请人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven H. Kim ,  Schubert S. Chu ,  Paul F. Ma ,  Joseph F. Aubuchon

    发明人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven H. Kim ,  Schubert S. Chu ,  Paul F. Ma ,  Joseph F. Aubuchon

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： C23C16/4404 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

    摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.

    摘要翻译： 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的腔室，其包括腔室盖组件，该室盖组件包含沿腔室盖组件的中心部分处的中心轴线延伸的扩张通道，以及从膨胀通道延伸到周边部分的锥形底面 室盖组件。 锥形底表面的形状和尺寸可以基本上覆盖基板接收表面。 腔室盖组件还包括连接到气体通道的导管，另一导管与另一个气体通道连接，两个气体通道绕过扩张通道。 每个通道具有延伸到扩张通道中的多个入口，并且入口被定位成提供通过膨胀通道的圆形气流。