公开(公告)号：US20050136684A1

公开(公告)日：2005-06-23

申请号：US10746695

申请日：2003-12-23

申请人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

发明人： Kevin Mukai ,  Kimberly Branshaw ,  Zheng Yuan ,  Xinyun Xia ,  Xiaolin Chen ,  Dongqing Li ,  M. Karim ,  Van Ton ,  Cary Ching ,  Steve Ghanayeim ,  Nitin Ingle

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76224 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76837

摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

摘要翻译： 可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。 在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层， 。 在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。 在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

公开(公告)号：US07431967B2

公开(公告)日：2008-10-07

申请号：US10757770

申请日：2004-01-14

申请人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

发明人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

IPC分类号： C23C16/00 ,  C23C14/00 ,  C23C16/22 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76837

摘要： A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.

摘要翻译： 在衬底上填充间隙的方法包括提供含硅处理气体氧化处理气体和含磷处理气体的流向容纳衬底的腔室，并将P掺杂氧化硅膜的第一部分基本上 通过引起处理气体之间的反应并随时间改变气体的比例，间隙中的保形层。 在保形层的沉积过程中，基板的温度保持在约500℃以下。 该方法还包括通过在本体层的整个沉积期间保持气体的比率基本恒定来沉积P掺杂氧化硅膜的第二部分作为本体层。 在本体层的整个沉积过程中，衬底的温度保持在约500℃以下。

公开(公告)号：US6060397A

公开(公告)日：2000-05-09

申请号：US502688

申请日：1995-07-14

申请人： Martin Seamons ,  Cary Ching ,  Kou Imaoka ,  Tatsuya Sato ,  Tirunelveli S. Ravi ,  Michael C. Triplett

发明人： Martin Seamons ,  Cary Ching ,  Kou Imaoka ,  Tatsuya Sato ,  Tirunelveli S. Ravi ,  Michael C. Triplett

IPC分类号： C23C16/44 ,  C23C16/56 ,  H01L21/203 ,  H01L21/205 ,  H01L21/304 ,  H01L21/31 ,  H01L21/00

CPC分类号： C23C16/4405 ,  Y10S438/905

摘要： A method (100) of cleaning residues from a chemical vapor deposition apparatus (10) is provided. The present method (100) includes introducing into a chamber (12) cleaning gases such as N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from the cleaning gases. The present method also includes removing residues from interior surfaces of the chamber 12 by forming a volatile product from the residues and at least one of the cleaning gases.

摘要翻译： 提供了从化学气相沉积装置（10）清洗残留物的方法（100）。 本方法（100）包括将清洁气体如N 2，C 2 F 6和O 2的腔室（12）引入并从清洗气体形成等离子体。 本方法还包括通过从残余物和至少一种清洁气体形成挥发性产物来从室12的内表面去除残留物。

公开(公告)号：US6153540A

公开(公告)日：2000-11-28

申请号：US34850

申请日：1998-03-04

申请人： Ishing Lou ,  Cary Ching ,  Peter W. Lee ,  Rong Pan ,  Paul Gee ,  Francimar Campana

发明人： Ishing Lou ,  Cary Ching ,  Peter W. Lee ,  Rong Pan ,  Paul Gee ,  Francimar Campana

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02129 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/31625

摘要： A method and apparatus for controlling the wet-etch rate and thickness uniformity of a dielectric layer, such as a phosphosilicate glass layer (PSG) layer. The method is based upon the discovery that the atmospheric pressure at which a PSG layer is deposited affects the wet-etch rate of the same, during a subsequent processing step, as well as the layer's thickness uniformity. As a result, the method of the present invention includes the step of pressurizing the atmospheric pressure of a semiconductor process chamber within a predetermined range after the substrate is deposited therein. Flowed into the deposition zone is a process gas comprising a silicon source, all oxygen source, and a phosphorous source; and maintaining the deposition zone at process conditions suitable for depositing a phosphosilicate glass layer on the substrate.

摘要翻译： 一种用于控制诸如磷硅酸盐玻璃层（PSG）层的介电层的湿蚀刻速率和厚度均匀性的方法和装置。 该方法基于以下发现：沉积PSG层的大气压力在随后的处理步骤期间影响其湿蚀刻速率以及层的厚度均匀性。 结果，本发明的方法包括在衬底沉积之后在预定范围内对半导体处理室的大气压进行加压的步骤。 流入沉积区的是包括硅源，全氧源和磷源的工艺气体; 以及将沉积区保持在适合于在基底上沉积磷硅酸盐玻璃层的工艺条件。