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1.发明申请Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material 有权用于形成半导体结构的方法以及相对于导电材料选择性地蚀刻氮化硅的方法公开(公告)号：US20080045034A1
公开(公告)日：2008-02-21
申请号：US11506347
申请日：2006-08-17
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译： 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将氮化硅和容器中的至少一些暴露于Cl 2以除去暴露的氮化硅，同时不从容器中去除至少大部分金属氮化物。 在随后的处理中，容器可以并入电容器中。
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2.发明申请Methods For Forming Semiconductor Constructions, And Methods For Selectively Etching Silicon Nitride Relative To Conductive Material 有权用于形成半导体结构的方法以及相对于导电材料选择性蚀刻氮化硅的方法公开(公告)号：US20100105186A1
公开(公告)日：2010-04-29
申请号：US12652955
申请日：2010-01-06
IPC分类号： H01L21/02
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译： 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。
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3.发明授权Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material 有权用于形成半导体结构的方法以及相对于导电材料选择性地蚀刻氮化硅的方法公开(公告)号：US07666797B2
公开(公告)日：2010-02-23
申请号：US11506347
申请日：2006-08-17
IPC分类号： H01L21/302 , H01L21/318
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译： 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。
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4.发明申请Methods for Forming Semiconductor Constructions, and Methods for Selectively Etching Silicon Nitride Relative to Conductive Material 有权形成半导体结构的方法以及相对于导电材料选择性蚀刻氮化硅的方法公开(公告)号：US20120052650A1
公开(公告)日：2012-03-01
申请号：US13288715
申请日：2011-11-03
IPC分类号： H01L21/02 , H01L21/3205
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译： 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。
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5.发明授权Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material 有权用于形成半导体结构的方法以及相对于导电材料选择性地蚀刻氮化硅的方法公开(公告)号：US08470716B2
公开(公告)日：2013-06-25
申请号：US13288715
申请日：2011-11-03
IPC分类号： H01L21/302 , H01L21/311 , H01L21/318
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译： 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。
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6.发明授权Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material 有权用于形成半导体结构的方法以及相对于导电材料选择性地蚀刻氮化硅的方法公开(公告)号：US08076248B2
公开(公告)日：2011-12-13
申请号：US12652955
申请日：2010-01-06
IPC分类号： H01L21/302 , H01L21/318 , H01L21/316
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译： 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。
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公开(公告)号：US07687844B2
公开(公告)日：2010-03-30
申请号：US12052124
申请日：2008-03-20
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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公开(公告)号：US07226845B2
公开(公告)日：2007-06-05
申请号：US11215243
申请日：2005-08-30
IPC分类号： H01L21/331
CPC分类号： H01L27/10894 , H01L27/10817 , H01L27/10852 , H01L28/91 , H01L29/945 , Y10S257/906
摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.
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公开(公告)号：US06881642B2
公开(公告)日：2005-04-19
申请号：US10419191
申请日：2003-04-21
申请人： Cem Basceri , Thomas M. Graettinger
发明人： Cem Basceri , Thomas M. Graettinger
IPC分类号： H01L21/02 , H01L21/285 , H01L21/316 , H01L21/20
CPC分类号： H01L28/84 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02194 , H01L21/0228 , H01L21/28568 , H01L21/3162 , H01L28/75 , H01L28/90
摘要： A method of forming an MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric formation, the first layer may be optionally subjected to a nitridization or oxidation process. A dielectric layer of, for example, aluminum oxide (Al2O3) formed by atomic layer deposition (ALD) is fabricated over the first layer and after the optional nitridization or oxidation process. An upper electrode of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) is formed over the dielectric layer.
摘要翻译： 公开了一种形成具有低泄漏和高电容的MIM电容器的方法。 在半球状晶粒多晶硅（HSG）的可选电容层上形成氮化钛（TiN）或硼掺杂氮化钛（TiBN）材料层作为下电极。 在电介质形成之前，第一层可以任选地进行氮化或氧化过程。 通过原子层沉积（ALD）形成的例如氧化铝（Al 2 O 3 N）的电介质层在第一层上和在任选的氮化之后制造，或 氧化过程。 在电介质层上形成氮化钛（TiN）或硼掺杂氮化钛（TiBN）的上电极。
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公开(公告)号：US06858894B2
公开(公告)日：2005-02-22
申请号：US10773780
申请日：2004-02-09
IPC分类号： H01L21/02 , H01L21/334 , H01L21/4763 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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