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公开(公告)号：US5019187A
公开(公告)日：1991-05-28
申请号：US489532
申请日：1990-03-07
CPC分类号： B23K35/3006 , B23K35/025 , B23K35/302 , C04B37/026 , H01L21/4853 , C04B2237/123 , C04B2237/124 , C04B2237/125 , C04B2237/127 , C04B2237/366 , C04B2237/40 , C04B2237/568 , C04B2237/62 , C04B2237/72 , C04B2237/76 , C04B2237/80 , Y10T29/49149
摘要： According to the present invention, there is provided an electronic component part comprising (i) a high thermal conductivity ceramic circuit board, (ii) terminal pins located over said circuit board, and (iii) a metal brazing material having metal brazing powder, at least one element selected from the Group IVa elements and a metal having a melting point higher than that of the metal brazing powder, the metal brazing material bonding said board and said pins. According to the present invention, metal, such as input/output terminal pins can very firmly be bonded to ceramic, such as a circuit board, within an atmosphere of, for example, N.sub.2 gas without the scattering of any brazing material in which case, unlike the prior art method, any vacuum furnace is not employed.
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公开(公告)号：US4924033A
公开(公告)日：1990-05-08
申请号：US318331
申请日：1989-03-03
CPC分类号： B23K35/3006 , B23K35/025 , B23K35/302 , C04B37/026 , H01L21/4853 , C04B2237/123 , C04B2237/124 , C04B2237/125 , C04B2237/127 , C04B2237/366 , C04B2237/40 , C04B2237/568 , C04B2237/62 , C04B2237/72 , C04B2237/76 , C04B2237/80 , Y10T29/49149
摘要： According to the present invention, there is provided an electronic component part comprising (i) a high thermal conductivity ceramic circuit board, (ii) terminal pins located over said circuit board, and (iii) a metal brazing material having metal brazing powder, at least one element selected from the Group IVa elements and a metal having a melting point higher than that of the metal brazing powder, the metal brazing material bonding said board and said pins. According to the present invention, metal, such as input/output terminal pins can very firmly be bonded to ceramic, such as a circuit board, within an atmosphere of, for example, N.sub.2 gas without the scattering of any brazing material in which case, unlike the prior art method, vacuum furnace is not employed.
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公开(公告)号：US4917642A
公开(公告)日：1990-04-17
申请号：US176752
申请日：1988-04-01
申请人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma
发明人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma
IPC分类号： C04B37/02 , H01H33/662
CPC分类号： H01H33/66207 , C04B37/026 , C04B2235/6581 , C04B2237/125 , C04B2237/127 , C04B2237/343 , C04B2237/406 , C04B2237/407 , C04B2237/708 , C04B2237/765 , C04B2237/80 , C04B2237/84 , H01H2033/66215 , H01H2033/66276 , H01L2224/48463 , Y10T29/49146
摘要： A method of manufacturing an air-tight ceramic container is disclosed. This method includes the steps of coating an active metal consisting of Ti and/or Zr on an opening end face of a ceramic tubular member in an amount of 0.1 to 10 mg/cm.sup.2, thereby forming an active metal layer, placing a brazing filler metal on the active metal layer, placing a metal cover member for shielding an opening portion of the ceramic tubular member so that a peripheral portion end face of the metal cover member is in contact with the brazing filler metal, and melting the brazing filler metal by heating, thereby brazing the metal cover member to the opening end face of the ceramic tubular member.
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公开(公告)号：US4919731A
公开(公告)日：1990-04-24
申请号：US308450
申请日：1989-02-10
申请人： Kiyoshi Iyogi , Takaaki Yasumoto , Toshirou Yanazawa , Nobuo Iwase , Masako Nakahashi , Hiromitsu Takeda
发明人： Kiyoshi Iyogi , Takaaki Yasumoto , Toshirou Yanazawa , Nobuo Iwase , Masako Nakahashi , Hiromitsu Takeda
IPC分类号： H01R43/02 , B23K35/363 , H01L21/48 , H01L23/498 , H01L23/538 , H05K3/46
CPC分类号： H01L23/49827 , H01L21/4853 , H01L2924/00013 , H01L2924/0002 , Y10T29/49149
摘要： The present invention provides an electronic component part with terminal pins very closely and very strongly bonded to a high thermal conductivity ceramics circuit board and a method for simply and continuously manufacturing electronic component parts, with a high operability, each with terminal pins bonded to a high thermal conductivity ceramics circuit board. According to the present invention, an electronic component part is provided in which terminal pins are bonded to a high thermal conductivity ceramics circuit board by a brazing metal, containing at least one kind of Group IVa elements. In another aspect of the present invention a method is provided for manufacturing electronic component parts, which comprises the step of attaching terminal pins to a high thermal conductivity ceramics circuit board by a brazing paste layer comprised of brazing metal powder containing at least one kind of Group IVa elements, an acrylic binder with a carboxylic group as a substituent group and organic solvent, and heating the resultant structure in an atmosphere containing nitrogen as a principal element so that terminal pins are firmly bonded to a circuit board.
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公开(公告)号：US4876119A
公开(公告)日：1989-10-24
申请号：US167237
申请日：1988-03-11
IPC分类号： C04B41/50 , C04B41/51 , C04B41/52 , C04B41/87 , C04B41/88 , C04B41/89 , H01L21/48 , H05K1/03 , H05K3/14 , H05K3/38
CPC分类号： C04B41/009 , C04B41/5062 , C04B41/5127 , C04B41/5144 , C04B41/52 , C04B41/87 , C04B41/88 , C04B41/89 , H01L21/4846 , H05K1/0306 , H05K3/146 , H05K3/388
摘要： A nitride ceramic member is maintained at a vacuum of 1.times.10.sup.-4 Torr or less at a temperature of 1,000.degree. C. or more, and a metal vapor is brought into contact with the surface of the nitride ceramic member. A nitride is reacted with the metal in the surface portion of the ceramic member, and a metallized layer is formed on the surface of the member. If AlN is used as a nitride ceramic material, the AlN member is maintained at the vacuum at the high temperature and a Ti vapor is brought into contact wit the surface of the AlN member to form a TiN coating layer on the surface of the AlN member. A BN or graphite mask is formed on the surface of the nitride ceramic member and the above method is practiced to selectively form a metallized layer on the non-masked member surface. By selectively forming a metallized layer by using AlN, a highly thermal-conductivity substrate having a conductive layer formed on the AlN base can be prepared.
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公开(公告)号：US4835344A
公开(公告)日：1989-05-30
申请号：US154273
申请日：1988-02-10
申请人： Kiyoshi Iyogi , Takaaki Yasumoto , Toshirou Yanazawa , Nobuo Iwase , Masako Nakahashi , Hiromitsu Takeda
发明人： Kiyoshi Iyogi , Takaaki Yasumoto , Toshirou Yanazawa , Nobuo Iwase , Masako Nakahashi , Hiromitsu Takeda
IPC分类号： H01R43/02 , B23K35/363 , H01L21/48 , H01L23/498 , H01L23/538 , H05K3/46
CPC分类号： H01L23/49827 , H01L21/4853 , H01L2924/00013 , H01L2924/0002 , Y10T29/49149
摘要： The present invention provides an electronic component part with terminal pins very closely and very strongly bonded to a high thermal conductivity ceramics circuit board and a method for simply and continuously manufacturing electronic component parts, with a high operability, each with terminal pins bonded to a high thermal conductivity ceramics circuit board. According to the present invention, an electronic component part is provided in which terminal pins are bonded to a high thermal conductivity ceramics circuit board by a brazing metal, containing at least one kind of Group IVa elements. In another aspect of the present invention a method is provided for manufacturing electronic component parts, which comprises the step of attaching terminal pins to a high thermal conductivity ceramics circuit board by a brazing paste layer comprised of brazing metal powder containing at least one kind of Group IVa elements, an acrylic binder with a carboxylic group as a substituent group and organic solvent, and heating the resultant structure in an atmosphere containing nitrogen as a principal element so that terminal pins are firmly bonded to a circuit board.
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7.发明授权Method for preparing highly heat-conductive substrate and copper wiring sheet usable in the same 失效制备高导热性基板的方法及可用于其的铜布线片
公开(公告)号：US4611745A
公开(公告)日：1986-09-16
申请号：US696181
申请日：1985-01-29
申请人： Masako Nakahashi , Makoto Shirokane , Tatsuo Yamazaki , Hisashi Yoshino , Akio Hori , Hiromitsu Takeda
发明人： Masako Nakahashi , Makoto Shirokane , Tatsuo Yamazaki , Hisashi Yoshino , Akio Hori , Hiromitsu Takeda
IPC分类号： B32B15/04 , C04B37/02 , H01L21/48 , H01L21/52 , H01L21/58 , H01L23/14 , H05K3/38 , B23K31/02
CPC分类号： C04B35/645 , C04B37/026 , H01L21/4882 , H01L23/142 , H01L24/32 , H05K1/0306 , H05K3/38 , C04B2235/6581 , C04B2237/12 , C04B2237/122 , C04B2237/125 , C04B2237/127 , C04B2237/366 , C04B2237/407 , C04B2237/62 , C04B2237/708 , C04B2237/72 , C04B2237/76 , C04B2237/86 , H01L2924/01322 , H01L2924/15787
摘要： A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 .mu.m comprising silver (Ag) and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper (Cu) optionally, between an aluminium nitride (AlN) substrate and a copper member; and joining said aluminium nitride (AlN) substrate and said copper (Cu) member with each other by heating. A copper wiring sheet comprising the above active layer is also usable in the method.
摘要翻译： 一种高导热性基材的制造方法，其特征在于，在所述活性层中含有银（Ag）和选自钛，锆和铪的活性金属以及铜（Cu ）可选地，在氮化铝（AlN）衬底和铜构件之间; 并通过加热将所述氮化铝（AlN）衬底和所述铜（Cu）构件彼此接合。 在该方法中也可以使用包含上述有源层的铜布线片。
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公开(公告)号：US5056702A
公开(公告)日：1991-10-15
申请号：US419029
申请日：1989-10-10
申请人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma , Seiichi Suenaga , Shigeru Miyakawa
发明人： Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma , Seiichi Suenaga , Shigeru Miyakawa
IPC分类号： C04B37/02 , H01H33/662
CPC分类号： H01H33/66207 , C04B37/026 , C04B2235/6581 , C04B2237/125 , C04B2237/127 , C04B2237/343 , C04B2237/406 , C04B2237/407 , C04B2237/708 , C04B2237/765 , C04B2237/80 , C04B2237/84 , H01H2033/66215 , H01H2033/66276 , H01L2224/48463 , Y10T29/49146
摘要： A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm.sup.2 to 10 mg/cm.sup.2, mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.
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9.发明授权
公开(公告)号：US4685607A
公开(公告)日：1987-08-11
申请号：US735106
申请日：1985-05-17
CPC分类号： C04B35/645 , C04B37/006 , C04B37/021 , C04B37/026 , C04B41/009 , C04B41/5144 , C04B41/88 , C04B2235/6562 , C04B2235/6581 , C04B2237/123 , C04B2237/126 , C04B2237/368 , C04B2237/406 , C04B2237/58 , C04B2237/60 , C04B2237/708 , C04B2237/76
摘要： A method of forming a nitride ceramic-metal complex material without using a special bonding material. This method comprises bringing a metallic material into contact with the surface of a nitride ceramic material, heating under vacuum the nitride ceramic material so as to dissociate the surface of the nitride ceramic material into nitrogen and a precursor of the ceramic material, thereby allowing the dissociated precursor to react with the metallic material and to achieve bonding between the nitride ceramic material and the metallic material. A nitride ceramic-metal complex material produced by the above method is also proposed.
摘要翻译： 一种在不使用特殊粘合材料的情况下形成氮化物陶瓷 - 金属复合材料的方法。 该方法包括使金属材料与氮化物陶瓷材料的表面接触，在真空下加热氮化物陶瓷材料，以将氮化物陶瓷材料的表面解离成氮气和陶瓷材料的前体，从而使解离的 前体与金属材料反应并实现氮化物陶瓷材料和金属材料之间的结合。 还提出了通过上述方法制备的氮化物陶瓷 - 金属络合物。
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公开(公告)号：US4681251A
公开(公告)日：1987-07-21
申请号：US782163
申请日：1985-10-02
CPC分类号： B23K35/004 , B23K35/286
摘要： There is disclosed a method of joining Ni-base heat-resisting alloys which comprises forming, under an inert atmosphere, an aluminum layer on at least surfaces to be joined of a constructional member which has been divided into a plural number of parts composed of a Ni-base heat-resisting alloy reinforced by a .gamma.' phase in Ni.sub.3 Al system, followed by heating the parts so that said aluminum is dispersed in said Ni-base heat-resisting alloys, the joining portion (joint) contains substantially no .beta.-NiAl phase and a .gamma.'-Ni.sub.3 Al phase is dispersed therein to join the parts. The joint provided by the method according to the present invention has been improved in its strength and corrosion resistance at a high temperature. Further, the method according to the present invention can be carried out with a high degree of freedom in supplying a joining filler metal.
摘要翻译： 公开了一种接合Ni基耐热合金的方法，其包括在惰性气氛下在至少被划分成多个部分的结构部件的表面上形成铝层的铝层 Ni3Al体系中由γ'相增强的Ni基耐热合金，然后加热部件使得所述铝分散在所述Ni基耐热合金中，所述接合部分（接头）基本上不含β-NiAl 相和γ'-Ni3Al相分散在其中以连接部件。 通过根据本发明的方法提供的接头在高温下的强度和耐腐蚀性得到改善。 此外，根据本发明的方法可以在供给接合填充金属时具有高自由度地进行。
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