摘要:
A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element (106) for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin (111) provided to embed the light emitting element; and a fluorescent element (110) contained in the silicone resin to absorb the primary light and release visible light.
摘要:
A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element (106) for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin (111) provided to embed the light emitting element; and a fluorescent element (110) contained in the silicone resin to absorb the primary light and release visible light.
摘要:
A light emitting device includes a plurality of chips efficiently disposed in a limited space of an opening that has an approximately elliptical or elongate-circular opening shape. The device includes a lead having a slit formed between a portion for bonding a wire to and a portion for mounting chips on, thereby to prevent extrusion of an adhesive and eliminate defective bonding.
摘要:
A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.
摘要:
An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
摘要:
For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.
摘要:
An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
摘要:
There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.
摘要:
In a light emitting element using nitride compound semiconductors, an active layer made of a mixed crystal containing In additionally contains at least Al or B as a component of the mixed crystal to improve the thermal resistance of the crystal and the reliability of the element characteristics. Thus, the semiconductor light emitting element has a sufficient lifetime and permits the emission wavelength to be freely selected from a wider wavelength range including blue, green and orange.