利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

53 条记录 (耗时 0.026 秒)

    Semiconductor laser device and method of fabricating the same
    2.
    发明授权
    Semiconductor laser device and method of fabricating the same 有权
    半导体激光器件及其制造方法

    公开(公告)号：US06771676B2

    公开(公告)日：2004-08-03

    申请号：US10234250

    申请日：2002-09-05

    申请人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

    发明人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

    IPC分类号： H01S304

    CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333

    摘要： A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

    摘要翻译： 通过将半导体激光元件安装在下降系统中的底座（基座）上形成的结构，可以获得能够提高可靠性的半导体激光器件。 该半导体激光器件包括形成在包括发光层的半导体元件的表面上的第一电极层，该发光层具有包括凹部和突出部的形状，安装有半导体元件的基底和设置有多个低熔点金属层 在形成在半导体元件的表面上的第一电极层和用于将形成在半导体元件的表面上的第一电极层与基底接合的基底之间。 因此，多个低熔点金属层与使用单个低熔点金属层的情况相比，容易地嵌入由包含凹部的形状和半导体元件的表面的突出部分形成的间隙。

    AlGaInP-based high-output red semiconductor laser device
    5.
    发明授权
    AlGaInP-based high-output red semiconductor laser device 有权
    基于AlGaInP的高输出红色半导体激光器件

    公开(公告)号：US06778575B2

    公开(公告)日：2004-08-17

    申请号：US10100920

    申请日：2002-03-20

    申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

    发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

    IPC分类号： G01R2302

    CPC分类号： B82Y20/00 ,  H01S5/0218 ,  H01S5/162 ,  H01S5/34326 ,  H01S2301/18

    摘要： A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

    摘要翻译： 提供具有实际折射率引导结构的半导体激光器件，当垂直光束发散角处于至少12.5°且不大于20.0°的较小水平时，也可以获得高扭结光输出和高最大光输出 。 该半导体激光器件包括在n型GaAs衬底上形成的AlGaInP的n型包覆层，在n型覆层上形成有AlGaInP层的有源层，形成在活性层上的AlGaInP的p型包覆层 层和形成为部分地覆盖p型包层的光限制层，垂直光束发散角为至少12.5°且不大于20.0°。 因此，与具有超过20.0°的垂直光束发散角的常规半导体激光器件相比，可以获得更高的扭结光输出和更高的最大光输出。

    Semiconductor laser device
    6.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US06768755B2

    公开(公告)日：2004-07-27

    申请号：US09746065

    申请日：2000-12-26

    申请人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

    发明人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

    IPC分类号： H01S500

    CPC分类号： H01S5/2231 ,  H01S5/06226 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227

    摘要： A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

    摘要翻译： 在具有脊部的p型包覆层上依次形成具有在脊部上表面上的条纹开口的耗尽增强层，低载流子浓度层和n型电流阻挡层。 低载流子浓度层的载流子浓度比n型电流阻挡层低。 耗尽增强层的带隙被设定为p型覆层和低载流子浓度层的带隙之间的中间电平。 或者，在n型耗尽增强层上形成具有低载流子浓度的第一电流阻挡层和相反导电型的第二电流阻挡层，并且在第二电流阻挡层上形成p型接触层 相反的导电类型和另一个p型接触层。

    Nitride-based semiconductor light-emitting device
    9.
    发明授权
    Nitride-based semiconductor light-emitting device 有权

    公开(公告)号：US06649942B2

    公开(公告)日：2003-11-18

    申请号：US10150930

    申请日：2002-05-21

    申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Kunio Takeuchi ,  Tsutomu Yamaguchi ,  Takashi Kano

    发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Kunio Takeuchi ,  Tsutomu Yamaguchi ,  Takashi Kano

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/06 ,  H01L33/14 ,  H01L33/38

    摘要： A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an emission layer, consisting of a nitride-based semiconductor, formed on the first nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the emission layer, a second conductivity type intermediate layer, consisting of a nitride-based semiconductor, formed on the second nitride-based semiconductor layer, a second conductivity type contact layer, including a nitride-based semiconductor layer having a smaller band gap than gallium nitride, formed on the intermediate layer, and a light-transmitting electrode formed on the contact layer. Thus, a carrier concentration and electric conductivity higher than those of a contact layer (nitride-based semiconductor layer) consisting of gallium nitride is obtained.