公开(公告)号：US6130446A

公开(公告)日：2000-10-10

申请号：US113301

申请日：1998-07-10

申请人： Kunio Takeuchi ,  Nobuhiko Hayashi ,  Yasuhiko Nomura ,  Kouji Tominaga

发明人： Kunio Takeuchi ,  Nobuhiko Hayashi ,  Yasuhiko Nomura ,  Kouji Tominaga

IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/43

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/32

摘要： The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.

摘要翻译： 本发明提供一种与n型氮化物半导体进行良好的欧姆接触的电极，而不需要在高温下进行热处理，其中铝层，硅层，镍层和金层依次层叠在n- 型氮化镓系半导体，形成n型电极。

公开(公告)号：US06654397B2

公开(公告)日：2003-11-25

申请号：US09941663

申请日：2001-08-30

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Shigeyuki Okamoto ,  Koji Tominaga ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Shigeyuki Okamoto ,  Koji Tominaga ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S500

CPC分类号： H01S5/16 ,  H01S5/0425 ,  H01S5/168

摘要： An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

公开(公告)号：US06778575B2

公开(公告)日：2004-08-17

申请号：US10100920

申请日：2002-03-20

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

IPC分类号： G01R2302

CPC分类号： B82Y20/00 ,  H01S5/0218 ,  H01S5/162 ,  H01S5/34326 ,  H01S2301/18

摘要： A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

摘要翻译： 提供具有实际折射率引导结构的半导体激光器件，当垂直光束发散角处于至少12.5°且不大于20.0°的较小水平时，也可以获得高扭结光输出和高最大光输出 。 该半导体激光器件包括在n型GaAs衬底上形成的AlGaInP的n型包覆层，在n型覆层上形成有AlGaInP层的有源层，形成在活性层上的AlGaInP的p型包覆层 层和形成为部分地覆盖p型包层的光限制层，垂直光束发散角为至少12.5°且不大于20.0°。 因此，与具有超过20.0°的垂直光束发散角的常规半导体激光器件相比，可以获得更高的扭结光输出和更高的最大光输出。

公开(公告)号：US06891872B1

公开(公告)日：2005-05-10

申请号：US09669448

申请日：2000-09-25

申请人： Ryouji Hiroyama ,  Yasuhiko Nomura ,  Koutarou Furusawa ,  Kunio Takeuchi ,  Shigeyuki Okamoto

发明人： Ryouji Hiroyama ,  Yasuhiko Nomura ,  Koutarou Furusawa ,  Kunio Takeuchi ,  Shigeyuki Okamoto

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/2205 ,  H01S5/221 ,  H01S5/222 ,  H01S5/2227 ,  H01S2301/18

摘要： A semiconductor laser device is characterized in that an angle θ of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70° and not more than 117°, a p-type cladding layer is made of AlX1Ga1-X1As, a first current blocking layer is made of AlX2Ga1-X2As, the distance between an emission layer and the first current blocking layer satisfies the relation of t≦0.275/(1−(X2−X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 μm and not more than 5 μm.

摘要翻译： 半导体激光器件的特征在于，由脊部的脊侧部分的侧表面和脊部的下部形成的倾斜角度θ至少为70°并且不大于117°，制成p型包覆层 的Al X1 Ga 1-X1 As，第一电流阻挡层由Al X2 Ga 1-X2 As，假设t表示距离，发光层与第一电流阻挡层之间的距离满足t <= 0.275 /（1-（X2-X1））的关系，并且脊部的下宽度W为 至少2个妈妈，不超过5个妈妈。

公开(公告)号：US06771676B2

公开(公告)日：2004-08-03

申请号：US10234250

申请日：2002-09-05

申请人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S304

CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333

摘要： A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

摘要翻译： 通过将半导体激光元件安装在下降系统中的底座（基座）上形成的结构，可以获得能够提高可靠性的半导体激光器件。 该半导体激光器件包括形成在包括发光层的半导体元件的表面上的第一电极层，该发光层具有包括凹部和突出部的形状，安装有半导体元件的基底和设置有多个低熔点金属层 在形成在半导体元件的表面上的第一电极层和用于将形成在半导体元件的表面上的第一电极层与基底接合的基底之间。 因此，多个低熔点金属层与使用单个低熔点金属层的情况相比，容易地嵌入由包含凹部的形状和半导体元件的表面的突出部分形成的间隙。

公开(公告)号：US06768755B2

公开(公告)日：2004-07-27

申请号：US09746065

申请日：2000-12-26

申请人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

发明人： Daijiro Inoue ,  Ryoji Hiroyama ,  Kunio Takeuchi ,  Yasuhiko Nomura ,  Masayuki Hata

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/06226 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227

摘要： A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

摘要翻译： 在具有脊部的p型包覆层上依次形成具有在脊部上表面上的条纹开口的耗尽增强层，低载流子浓度层和n型电流阻挡层。 低载流子浓度层的载流子浓度比n型电流阻挡层低。 耗尽增强层的带隙被设定为p型覆层和低载流子浓度层的带隙之间的中间电平。 或者，在n型耗尽增强层上形成具有低载流子浓度的第一电流阻挡层和相反导电型的第二电流阻挡层，并且在第二电流阻挡层上形成p型接触层 相反的导电类型和另一个p型接触层。

公开(公告)号：US06649942B2

公开(公告)日：2003-11-18

申请号：US10150930

申请日：2002-05-21

申请人： Masayuki Hata ,  Yasuhiko Nomura ,  Kunio Takeuchi ,  Tsutomu Yamaguchi ,  Takashi Kano

发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Kunio Takeuchi ,  Tsutomu Yamaguchi ,  Takashi Kano

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/06 ,  H01L33/14 ,  H01L33/38

摘要： A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an emission layer, consisting of a nitride-based semiconductor, formed on the first nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the emission layer, a second conductivity type intermediate layer, consisting of a nitride-based semiconductor, formed on the second nitride-based semiconductor layer, a second conductivity type contact layer, including a nitride-based semiconductor layer having a smaller band gap than gallium nitride, formed on the intermediate layer, and a light-transmitting electrode formed on the contact layer. Thus, a carrier concentration and electric conductivity higher than those of a contact layer (nitride-based semiconductor layer) consisting of gallium nitride is obtained.

公开(公告)号：US07822087B2

公开(公告)日：2010-10-26

申请号：US12058729

申请日：2008-03-30

申请人： Masayuki Hata ,  Kunio Takeuchi ,  Seiichi Tokunaga

发明人： Masayuki Hata ,  Kunio Takeuchi ,  Seiichi Tokunaga

IPC分类号： H01S3/04

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3063 ,  H01S2304/04 ,  H01S2304/12

摘要： A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.

摘要翻译： 可以获得能够提高其光波导的解理面平坦度的半导体激光器件。 该半导体激光装置包括：支撑基板，具有设置在第一方向上延伸的光波导的端部的一对腔面的半导体激光元件部和将支撑基板和半导体激光元件部彼此接合的接合层， 而接合层在空腔面附近形成在靠近光波导端的至少端部的区域上的空隙部分。

公开(公告)号：US07260130B2

公开(公告)日：2007-08-21

申请号：US10811137

申请日：2004-03-29

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L24/83 ,  H01L2224/83192 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34326

摘要： A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

摘要翻译： 得到能够提高散热性，简化制造工序，提高制造成品率的半导体激光装置。 该半导体激光器件包括形成在发射层上同时构成凸脊部分的半导体层，由形成为至少覆盖脊部的侧表面的半导体构成的电流阻挡层，形成为接触的第一金属电极 脊部的上表面和从脊部以规定间隔配置在脊部两侧的凸状支撑部。

公开(公告)号：US20060194360A1

公开(公告)日：2006-08-31

申请号：US11356964

申请日：2006-02-21

申请人： Kunio Takeuchi ,  Yasumitsu Kunoh

发明人： Kunio Takeuchi ,  Yasumitsu Kunoh

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/76251 ,  H01S5/0215 ,  H01S5/34333

摘要： A principal surface at one side of a support substrate has thereon an adjustment layer made of material having a higher thermal expansion coefficient than that of the support substrate. Then, a nitride-base semiconductor element layer and the support substrate on a growth substrate are joined via an adhesion layer. Next, the support substrate is joined to the nitride-base semiconductor element layer via the adhesion layer. Next, the growth substrate is separated from the joined nitride-base semiconductor element layer and the support substrate.