公开(公告)号：US06743678B2

公开(公告)日：2004-06-01

申请号：US10424959

申请日：2003-04-28

申请人： Kwang-hee Lee ,  Sung-tae Kim ,  Cha-young Yoo ,  Han-jin Lim ,  Wan-don Kim ,  Se-hoon Oh

发明人： Kwang-hee Lee ,  Sung-tae Kim ,  Cha-young Yoo ,  Han-jin Lim ,  Wan-don Kim ,  Se-hoon Oh

IPC分类号： H01L21336

CPC分类号： H01L28/75 ,  H01L28/65

摘要： A lower electrode is formed from a first metal on a semiconductor substrate. Atoms of a second metal, that is different than the first metal, are diffused into the lower electrode. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the dielectric layer. Diffusion of second metal atoms into the lower electrode may reduce or prevent crystal grain growth and agglomeration on a surface of the lower electrode during a subsequent high temperature process.

摘要翻译： 下电极由半导体衬底上的第一金属形成。 与第一金属不同的第二金属的原子被扩散到下电极中。 在下电极上形成介电层，在电介质层上形成上电极。 在随后的高温过程中，第二金属原子向下电极的扩散可以减少或防止下电极表面上的晶粒生长和结块。

公开(公告)号：US20060148193A1

公开(公告)日：2006-07-06

申请号：US11374349

申请日：2006-03-13

申请人： Kwang-hee Lee ,  Cha-young Yoo ,  Han-Jin Lim ,  Sung-tae Kim ,  Suk-jin Chung ,  Wan-don Kim ,  Jung-hee Chung ,  Jin-il Lee

发明人： Kwang-hee Lee ,  Cha-young Yoo ,  Han-Jin Lim ,  Sung-tae Kim ,  Suk-jin Chung ,  Wan-don Kim ,  Jung-hee Chung ,  Jin-il Lee

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  H01L21/28556 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2-1 ccm and oxygen at a flow rate of 20-60 sccm, and depositing the ruthenium film at a temperature of 330-430° C. under a pressure of 0.5-5 Torr using chemical vapor deposition (CVD).

摘要翻译： 提供1）一种在单一工艺条件下形成钌膜的方法，由此保持钌膜对下层的高附着性，以及2）使用这种方法制造金属 - 绝缘体 - 金属（MIM）电容器的方法 钌膜成型方法。 形成钌膜的方法包括以0.2-1ccm的流速和20-60sccm的流量的氧供给双（异庚烷-2,4-二酮）降冰片二烯钌，并将钌膜以 在0.5-5乇的压力下使用化学气相沉积（CVD）来制备330-430℃。

公开(公告)号：US07049232B2

公开(公告)日：2006-05-23

申请号：US10657596

申请日：2003-09-08

申请人： Kwang-hee Lee ,  Cha-young Yoo ,  Han-jin Lim ,  Sung-tae Kim ,  Suk-jin Chung ,  Wan-don Kim ,  Jung-hee Chung ,  Jin-il Lee

发明人： Kwang-hee Lee ,  Cha-young Yoo ,  Han-jin Lim ,  Sung-tae Kim ,  Suk-jin Chung ,  Wan-don Kim ,  Jung-hee Chung ,  Jin-il Lee

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  H01L21/28556 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).

公开(公告)号：US07034350B2

公开(公告)日：2006-04-25

申请号：US10795020

申请日：2004-03-05

申请人： Suk-jin Chung ,  Wan-don Kim ,  Cha-young Yoo ,  Kwang-hee Lee ,  Han-jin Lim ,  Jin-il Lee

发明人： Suk-jin Chung ,  Wan-don Kim ,  Cha-young Yoo ,  Kwang-hee Lee ,  Han-jin Lim ,  Jin-il Lee

IPC分类号： H01L27/108

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/91

摘要： Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O2) when initially formed.

摘要翻译： 电容器包括集成电路（半导体）基板和布置在集成电路基板上并且在其中包括金属插塞的层间电介质。 下部电极设置在层间电介质上并接触金属插塞。 下电极在其中包括空腔，并且在腔中包括掩埋层。 掩埋层是吸氧材料。 设置在下电极上的电介质层和上电极设置在电介质层上。 下电极可以是贵金属层。 当初始形成时，掩埋层可以填充空腔并且可以不含有氧（O 2 2 N）。

公开(公告)号：US07091102B2

公开(公告)日：2006-08-15

申请号：US10742727

申请日：2003-12-19

申请人： Han-jin Lim ,  Kwang-hee Lee ,  Suk-jin Chung ,  Cha-young Yoo ,  Wan-don Kim ,  Jin-il Lee

发明人： Han-jin Lim ,  Kwang-hee Lee ,  Suk-jin Chung ,  Cha-young Yoo ,  Wan-don Kim ,  Jin-il Lee

IPC分类号： H01L21/20 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65 ,  H01L28/91 ,  H01L28/92

摘要： An integrated circuit device is formed by providing a substrate and forming a capacitor on the substrate. The capacitor includes a lower electrode disposed on the substrate, a dielectric layer on the lower electrode, and an upper electrode on the dielectric. A hydrogen barrier insulation layer is formed on the upper electrode and a hydrogen barrier spacer is formed on a sidewall of the capacitor.

摘要翻译： 通过提供衬底并在衬底上形成电容器形成集成电路器件。 电容器包括设置在基板上的下电极，下电极上的电介质层和电介质上的上电极。 在上电极上形成氢阻隔绝缘层，在电容器的侧壁上形成氢阻挡隔离层。

公开(公告)号：US20060138511A1

公开(公告)日：2006-06-29

申请号：US11360070

申请日：2006-02-23

申请人： Suk-jin Chung ,  Wan-don Kim ,  Cha-young Yoo ,  Kwang-hee Lee ,  Han-jin Lim ,  Jin-il Lee

发明人： Suk-jin Chung ,  Wan-don Kim ,  Cha-young Yoo ,  Kwang-hee Lee ,  Han-jin Lim ,  Jin-il Lee

IPC分类号： H01L29/94

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/91

摘要： Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O2) when initially formed.

摘要翻译： 电容器包括集成电路（半导体）基板和布置在集成电路基板上并且在其中包括金属插塞的层间电介质。 下部电极设置在层间电介质上并接触金属插塞。 下电极在其中包括空腔，并且在腔中包括掩埋层。 掩埋层是吸氧材料。 设置在下电极上的电介质层和上电极设置在电介质层上。 下电极可以是贵金属层。 当初始形成时，掩埋层可以填充空腔并且可以不含有氧（O 2 2 N）。

公开(公告)号：US06649502B2

公开(公告)日：2003-11-18

申请号：US09859168

申请日：2001-05-16

申请人： Cha-young Yoo ,  Han-jin Lim ,  Wan-don Kim ,  Se-jin Lee ,  Soon-yeon Park ,  Yong-kuk Jeong ,  Han-mei Choi ,  Gyung-hoon Hong ,  Seok-jun Won

发明人： Cha-young Yoo ,  Han-jin Lim ,  Wan-don Kim ,  Se-jin Lee ,  Soon-yeon Park ,  Yong-kuk Jeong ,  Han-mei Choi ,  Gyung-hoon Hong ,  Seok-jun Won

IPC分类号： H01L213205

CPC分类号： H01L21/02183 ,  C23C16/405 ,  C23C16/45557 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/40 ,  H01L28/56

摘要： A dielectric region for a device such as a memory cell capacitor is formed by depositing a metal oxide, such as tantalum oxide, on a substrate at a first deposition rate in a first atmosphere maintained within a first temperature range and a first pressure range that produce a first tantalum oxide layer with a desirable step coverage. Metal oxide is subsequently deposited on the first metal oxide layer in a second atmosphere maintained within a second temperature range and a second pressure range that produce a second deposition rate greater than the first deposition rate to form a second tantalum oxide layer on the first tantalum oxide layer. For example, the first atmosphere may be maintained at a temperature in a range from about 350° C. to about 460° C. and a pressure in a range from about 0.01 Torr to about 2.0 Torr during formation of a first tantalum oxide layer, and the second atmosphere may be maintained at a temperature in a range from about 400° C. to about 500° C. and a pressure in a range from about 0.1 Torr to about 10.0 Torr during formation of a second tantalum oxide layer.

公开(公告)号：US06995071B2

公开(公告)日：2006-02-07

申请号：US10830214

申请日：2004-04-22

申请人： Se-hoon Oh ,  Jung-hee Chung ,  Jae-hyoung Choi ,  Jeong-sik Choi ,  Sung-tae Kim ,  Cha-young Yoo

发明人： Se-hoon Oh ,  Jung-hee Chung ,  Jae-hyoung Choi ,  Jeong-sik Choi ,  Sung-tae Kim ,  Cha-young Yoo

IPC分类号： H10L21/8242

CPC分类号： H01L27/10852 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02356 ,  H01L21/31645 ,  H01L27/10817 ,  H01L27/10855 ,  H01L28/91 ,  Y10S438/957

摘要： Methods of forming metal-insulator-metal type capacitors in integrated circuit memory devices can include crystallizing an HfO2 dielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in range between about 250 degrees Centigrade and about 450 degrees Centigrade. An upper electrode can be formed on the HfO2 dielectric layer.

摘要翻译： 在集成电路存储器件中形成金属 - 绝缘体 - 金属型电容器的方法可以包括在低温等离子体处理中在电容器结构的下部电极上结晶HfO 2/2电介质层，温度范围为 约250摄氏度和约450摄氏度。 上电极可以形成在HfO 2 2电介质层上。

公开(公告)号：US20050227432A1

公开(公告)日：2005-10-13

申请号：US11097404

申请日：2005-04-01

申请人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

发明人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

IPC分类号： H01L27/108 ,  H01L21/311 ,  H01L21/8242

CPC分类号： H01L21/31122

摘要： A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a meta-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.

摘要翻译： 可以在间绝缘子金属（MIM）型电容器的金属氮化物下电极上形成金属 - 氮氧化物种子电介质层。 金属 - 氮化物种子电介质层可以用作阻挡层，以在例如用于在包括MIM型的集成电路中形成上层金属化/结构的后端处理中减少与金属氮化物下电极的反应 电容器。 包含在金属 - 氮氧化物种子电介质层中的氮可以减少在常规型MIM电容器中可能发生的反应类型。 可以在金属 - 氮化物种子介电层上形成金属氧化物主介电层，并且可以与MIM型电容器中的金属 - 氮化物种子电介质层保持分离。 金属氧化物主电介质层可以被稳定（使用例如热或等离子体处理）以从其中去除缺陷（例如碳）并调整金属氧化物主介电层的化学计量。

公开(公告)号：US07314806B2

公开(公告)日：2008-01-01

申请号：US11097404

申请日：2005-04-01

申请人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

发明人： Jae-hyoung Choi ,  Sung-tae Kim ,  Ki-chul Kim ,  Cha-young Yoo ,  Jeong-hee Chung ,  Se-hoon Oh ,  Jeong-sik Choi

IPC分类号： H01L21/20

CPC分类号： H01L21/31122

摘要： A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.

摘要翻译： 可以在金属 - 绝缘体 - 金属（MIM）型电容器的金属氮化物下电极上形成金属 - 氮化物种子电介质层。 金属 - 氮化物种子电介质层可以用作阻挡层，以在例如用于在包括MIM型的集成电路中形成上层金属化/结构的后端处理中减少与金属氮化物下电极的反应 电容器。 包含在金属 - 氮氧化物种子电介质层中的氮可以减少在常规型MIM电容器中可能发生的反应类型。 可以在金属 - 氮化物种子介电层上形成金属氧化物主介电层，并且可以与MIM型电容器中的金属 - 氮化物种子电介质层保持分离。 金属氧化物主电介质层可以被稳定（使用例如热或等离子体处理）以从其中去除缺陷（例如碳）并调整金属氧化物主介电层的化学计量。