公开(公告)号：US20190177846A1

公开(公告)日：2019-06-13

申请号：US16213386

申请日：2018-12-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Rachel BATZER ,  Zhe GUI ,  Galbokka Hewage Layan SAVITHRA

IPC: C23C16/455 ,  H01J37/32

Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.

公开(公告)号：US20210269918A1

公开(公告)日：2021-09-02

申请号：US17322324

申请日：2021-05-17

Applicant: Lam Research Corporation

Inventor： Rachel BATZER ,  Zhe GUI ,  Galbokka Hewage Layan SAVITHRA

IPC: C23C16/455 ,  H01J37/32

Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.

公开(公告)号：US20230304156A1

公开(公告)日：2023-09-28

申请号：US18327558

申请日：2023-06-01

Applicant: Lam Research Corporation

Inventor： Geoffrey HOHN ,  Huatan QIU ,  Rachel E. BATZER ,  Guangbi YUAN ,  Zhe GUI

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/505

CPC classification number: C23C16/4585 ,  H01L21/68785 ,  H01L21/68742 ,  H01L21/68757 ,  C23C16/4586 ,  C23C16/4581 ,  C23C16/505

Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

公开(公告)号：US20250003074A1

公开(公告)日：2025-01-02

申请号：US18884565

申请日：2024-09-13

Applicant: Lam Research Corporation

Inventor： Rachel E. BATZER ,  Zhe GUI ,  Galbokka Hewage Layan SAVITHRA

IPC: C23C16/455 ,  H01J37/32

Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.

公开(公告)号：US20230203646A1

公开(公告)日：2023-06-29

申请号：US18175513

申请日：2023-02-27

Applicant: Lam Research Corporation

Inventor： Matthew Scott WEIMER ,  Bhadri N. VARADARAJAN ,  Bo GONG ,  Zhe GUI

IPC: C23C16/32 ,  C23C16/452 ,  C23C16/505 ,  H01L21/02 ,  H01L21/768 ,  C23C16/04 ,  H01L29/49 ,  H01L21/3105

CPC classification number: C23C16/325 ,  C23C16/452 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02222 ,  H01L21/76831 ,  H01L21/02211 ,  C23C16/045 ,  H01L29/4983 ,  H01L21/02216 ,  H01L21/76834 ,  H01L29/4991 ,  H01L21/3105 ,  H01L21/7682 ,  H01L2221/1047

Abstract: A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

公开(公告)号：US20230175134A1

公开(公告)日：2023-06-08

申请号：US18163828

申请日：2023-02-02

Applicant: Lam Research Corporation

Inventor： Rachel E. BATZER ,  Huatan QIU ,  Bhadri N. VARADARAJAN ,  Patrick Girard BREILING ,  Bo GONG ,  Will SCHLOSSER ,  Zhe GUI ,  Taide TAN ,  Geoffrey HOHN

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32422 ,  C23C16/505 ,  H01J37/32522 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.