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公开(公告)号:US09659914B2
公开(公告)日:2017-05-23
申请号:US14819355
申请日:2015-08-05
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor: Yi-Jyun Chen , Chih-Hao Lin , Hsin-Lun Su , Fang-Chang Hsueh
IPC: H01L29/18 , H01L33/00 , H01L25/075 , H01L23/498 , H01L27/15 , H01L33/50 , H01L33/62 , H01L33/44
CPC classification number: H01L25/0753 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L25/075 , H01L27/15 , H01L27/153 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2924/00014
Abstract: A light-emitting diode chip package is provided. The light-emitting diode chip package includes a substrate; a light-emitting diode chip set (LED chip set) disposed over the substrate, wherein the LED chip set is formed by a plurality of light-emitting diode chips (LED chips) in one piece; and at least two electrodes disposed over the substrate and electrically connected to the LED chip set.
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公开(公告)号:US20160247787A1
公开(公告)日:2016-08-25
申请号:US14819355
申请日:2015-08-05
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor: Yi-Jyun Chen , Chih-Hao Lin , Hsin-Lun Su , Fang-Chang Hsueh
IPC: H01L25/075 , H01L27/15 , H01L23/498
CPC classification number: H01L25/0753 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L25/075 , H01L27/15 , H01L27/153 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2924/00014
Abstract: A light-emitting diode chip package is provided. The light-emitting diode chip package includes a substrate; a light-emitting diode chip set (LED chip set) disposed over the substrate, wherein the LED chip set is formed by a plurality of light-emitting diode chips (LED chips) in one piece; and at least two electrodes disposed over the substrate and electrically connected to the LED chip set.
Abstract translation: 提供了一种发光二极管芯片封装。 发光二极管芯片封装包括基板; 设置在基板上的发光二极管芯片组(LED芯片组),其中LED芯片组由多个发光二极管芯片(LED芯片)形成为一体; 以及至少两个设置在所述基板上并电连接到所述LED芯片组的电极。
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公开(公告)号:US09214443B2
公开(公告)日:2015-12-15
申请号:US14272468
申请日:2014-05-07
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor: Yi-Jyun Chen
IPC: H01L23/00
CPC classification number: H01L24/32 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/2745 , H01L2224/276 , H01L2224/2783 , H01L2224/29005 , H01L2224/29012 , H01L2224/29013 , H01L2224/29016 , H01L2224/29023 , H01L2224/29076 , H01L2224/2908 , H01L2224/291 , H01L2224/29111 , H01L2224/29113 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32054 , H01L2224/32056 , H01L2224/32113 , H01L2224/32225 , H01L2224/32245 , H01L2224/32502 , H01L2224/32506 , H01L2224/83805 , H01L2224/83815 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01083 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/00014
Abstract: The present invention provides a eutectic solder structure for a chip including a substrate and a solder structure on the substrate. The solder structure includes an alternate lamination of a plurality of first metal layers and a plurality of second metal layers, wherein each second metal layer has a continuous region and a plurality of openings and the melting point of the plurality of second metal layers is higher than that of the plurality of first metal layers. The eutectic solder structure for a chip also includes a chip on the solder structure, wherein the chip is bonded to the substrate by a eutectic reaction of the solder structure.
Abstract translation: 本发明提供了一种用于芯片的共晶焊料结构,其包括在基板上的基板和焊料结构。 焊料结构包括多个第一金属层和多个第二金属层的交替叠层,其中每个第二金属层具有连续区域和多个开口,并且多个第二金属层的熔点高于 多个第一金属层中的第一金属层。 用于芯片的共晶焊料结构还包括焊料结构上的芯片,其中芯片通过焊料结构的共晶反应结合到衬底。
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公开(公告)号:US11018182B2
公开(公告)日:2021-05-25
申请号:US16171334
申请日:2018-10-25
Applicant: Lextar Electronics Corporation
Inventor: Yi-Jyun Chen , Li-Cheng Yang , Yu-Chun Lee , Shiou-Yi Kuo , Chih-Hao Lin
Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.
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公开(公告)号:US09812432B2
公开(公告)日:2017-11-07
申请号:US15162538
申请日:2016-05-23
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor: Yi-Jyun Chen , Chih-Hao Lin
CPC classification number: H01L25/0753 , H01L25/0756 , H01L27/15 , H01L33/08 , H01L33/502 , H01L33/60 , H01L33/62
Abstract: An LED chip package includes a substrate having a metal terminal (gold finger structure). A LED chip set is composed of a plurality of LED chips formed in one piece, and has a plurality of light-emitting areas which are separated from each other. The LED chip set is disposed on the substrate and electrically connected to the metal terminal.
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公开(公告)号:US20160300821A1
公开(公告)日:2016-10-13
申请号:US15186396
申请日:2016-06-17
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor: Yi-Jyun Chen , Chih-Hao Lin , Hsin-Lun Su , Fang-Chang Hsueh
IPC: H01L25/075 , H01L33/50 , H01L33/44 , H01L33/62
CPC classification number: H01L25/0753 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L25/075 , H01L27/15 , H01L27/153 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2924/00014
Abstract: A light-emitting diode chip package is provided. The light-emitting diode chip package includes a substrate; a light-emitting diode chip set (LED chip set) disposed over the substrate, wherein the LED chip set is formed by a plurality of light-emitting diode chips (LED chips) in one piece; and at least two electrodes disposed over the substrate and electrically connected to the LED chip set.
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公开(公告)号:US09202771B2
公开(公告)日:2015-12-01
申请号:US14271390
申请日:2014-05-06
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor: Yi-Jyun Chen
CPC classification number: H01L23/38 , H01L35/16 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor chip structure including a semiconductor chip having a pair of electrodes is disclosed. The electrodes have different conductivity types for electrical connection, respectively. A thermoelectric cooling material layer is disposed within each of the pair of electrodes, respectively.
Abstract translation: 公开了一种包括具有一对电极的半导体芯片的半导体芯片结构。 电极分别具有不同的导电类型用于电连接。 热电冷却材料层分别设置在每对电极中。
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