Pixel structure
    4.
    发明授权

    公开(公告)号:US11018182B2

    公开(公告)日:2021-05-25

    申请号:US16171334

    申请日:2018-10-25

    Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

    Semiconductor chip structure
    7.
    发明授权
    Semiconductor chip structure 有权
    半导体芯片结构

    公开(公告)号:US09202771B2

    公开(公告)日:2015-12-01

    申请号:US14271390

    申请日:2014-05-06

    Inventor: Yi-Jyun Chen

    CPC classification number: H01L23/38 H01L35/16 H01L2924/0002 H01L2924/00

    Abstract: A semiconductor chip structure including a semiconductor chip having a pair of electrodes is disclosed. The electrodes have different conductivity types for electrical connection, respectively. A thermoelectric cooling material layer is disposed within each of the pair of electrodes, respectively.

    Abstract translation: 公开了一种包括具有一对电极的半导体芯片的半导体芯片结构。 电极分别具有不同的导电类型用于电连接。 热电冷却材料层分别设置在每对电极中。

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