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公开(公告)号：US10818610B2
公开(公告)日：2020-10-27
申请号：US16313258
申请日：2017-11-15
申请人： LG CHEM, LTD.
发明人： Hee Jung Kim , Nu Ri Na , Young Kook Kim , Kwang Joo Lee
IPC分类号： H01L23/552 , C09J7/38 , C09J7/28 , C09J9/02 , H01L23/00 , H01L25/065
摘要： There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 μm or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.
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公开(公告)号：US20200294972A1
公开(公告)日：2020-09-17
申请号：US16884559
申请日：2020-05-27
申请人： LG Chem, Ltd.
发明人： Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Kwang Joo Lee , Seung Hee Nam , Young Kook Kim
IPC分类号： H01L25/065 , H01L23/00 , H01L23/28 , H01L23/495 , H01L21/56 , H01L23/31 , H01L25/00
摘要： The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.
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公开(公告)号：US10338020B2
公开(公告)日：2019-07-02
申请号：US15529813
申请日：2016-01-29
申请人： LG CHEM, LTD.
发明人： Jung Hak Kim , Young Kook Kim , Kwang Joo Lee , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Seung Hee Nam , Ji Ho Han
IPC分类号： G01R15/08 , G01R27/08 , B23H5/00 , G01N27/12 , G01N27/447 , G01N27/04 , G01N27/14 , G01N27/404
摘要： The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.
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公开(公告)号：US10991678B2
公开(公告)日：2021-04-27
申请号：US16884559
申请日：2020-05-27
申请人： LG Chem, Ltd.
发明人： Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Kwang Joo Lee , Seung Hee Nam , Young Kook Kim
IPC分类号： H01L21/56 , H01L25/065 , H01L23/00 , H01L23/28 , H01L23/495 , H01L23/31 , H01L25/00
摘要： The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.
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公开(公告)号：US11021634B2
公开(公告)日：2021-06-01
申请号：US15571210
申请日：2016-09-23
申请人： LG CHEM, LTD.
发明人： Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Kwang Joo Lee , Young Kook Kim , Seung Hee Nam
IPC分类号： C09J163/10 , C09J7/10 , C09J133/04 , C08G59/62 , H01L25/07 , H01L25/065 , H01L23/482 , H01L23/00 , C09J163/00
摘要： The present invention relates to an adhesive film having a thixotropic index at 110° C. of 1.5 to 7.5, which is used for fixing a first semiconductor device and a second semiconductor device, a ratio of an area of said first semiconductor device to an area of said second semiconductor device being 0.65 or less, a method for preparing a semiconductor device using the adhesive film, and a semiconductor device.
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公开(公告)号：US10920109B2
公开(公告)日：2021-02-16
申请号：US15752151
申请日：2017-03-28
申请人： LG CHEM, LTD.
发明人： Jung Hak Kim , Hee Jung Kim , Seung Hee Nam , Kwang Joo Lee , Se Ra Kim , Young Kook Kim
IPC分类号： H01L23/14 , C09J7/10 , C09J7/30 , C09J11/06 , C09J11/04 , C09J133/08 , C09J133/10 , C09J163/00 , C09J163/04 , H01L23/495 , H01L23/00 , C08G59/62
摘要： The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.
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公开(公告)号：US10253223B2
公开(公告)日：2019-04-09
申请号：US15752666
申请日：2017-03-31
申请人： LG CHEM, LTD.
发明人： Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Kwang Joo Lee , Seung Hee Nam , Young Kook Kim
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , C09J133/10 , C09J163/04 , H01L21/56 , H01L25/065 , H01L23/31 , C08G59/62 , C09J163/00
摘要： The present invention relates to a semiconductor device including: a first semiconductor element fixed onto an adherend by flip-chip connection; an adhesive layer for embedding a space between the adherend and the first semiconductor element and embedding the first semiconductor element; and a second semiconductor element connected to the first semiconductor element via the adhesive layer, wherein the adhesive layer has a predetermined melt viscosity and thixotropic index.
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8.发明授权公开(公告)号：US09540547B2
公开(公告)日：2017-01-10
申请号：US14781507
申请日：2014-12-12
申请人： LG CHEM, LTD.
发明人： Young Kook Kim , Se Ra Kim , Hee Jung Kim , Jung Ho Jo , Kwang Joo Lee , Jung Hak Kim , Seung Hee Nam
IPC分类号： C09J11/08 , H01L21/26 , H01L21/78 , C09J133/00 , C09J7/02 , C09J5/00 , H01L21/683 , H01L23/00
CPC分类号： C09J11/08 , C09J5/00 , C09J7/20 , C09J133/00 , C09J2201/128 , C09J2201/606 , C09J2203/326 , C09J2205/302 , C09J2205/31 , C09J2433/00 , C09J2463/00 , C09J2475/00 , C09J2483/00 , H01L21/26 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2221/68336 , H01L2221/68377 , H01L2221/68381 , H01L2224/27003 , H01L2224/271 , H01L2224/27436 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/83203 , H01L2224/83204 , H01L2224/83862 , H01L2224/92 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/3512 , H01L2924/0665 , H01L2224/27 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： There are provided a composition for forming an adhesive layer of a dicing film including: a silicon compound oil including at least one reactive functional group; an adhesive binder; and a photoinitiator, wherein a weight ratio of the silicon compound oil including at least one reactive functional group to the adhesive binder is 0.01% to 4.5%, a dicing film including an adhesive layer including the composition, a dicing die bonding film including the dicing film, and a method for dicing a semiconductor wafer using the dicing die bonding film.
摘要翻译： 提供一种用于形成切割膜的粘合剂层的组合物，其包括：包含至少一个反应性官能团的硅化合物油; 粘合剂; 和光引发剂，其中包含至少一个反应性官能团的硅化合物油与粘合剂粘合剂的重量比为0.01％至4.5％，包括包含该组合物的粘合剂层的切割膜，包括切割的切割模片接合膜 膜，以及使用切割芯片接合膜对半导体晶片进行切割的方法。
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9.发明授权公开(公告)号：US10759971B2
公开(公告)日：2020-09-01
申请号：US15313441
申请日：2016-04-29
申请人： LG CHEM, LTD.
发明人： Hee Jung Kim , Se Ra Kim , Jung Hak Kim , Seung Hee Nam , Jung Ho Jo , Kwang Joo Lee , Young Kook Kim
IPC分类号： B32B7/02 , C09J7/00 , B32B27/28 , B32B27/42 , B32B15/08 , B32B27/06 , B32B15/09 , B32B27/30 , B32B27/34 , B32B27/18 , B32B27/24 , B32B27/16 , B32B15/085 , B32B27/08 , C09J7/10 , C09J201/00 , C09J7/20 , B32B7/06 , H01L23/00 , C08L63/00 , C09D163/00 , B32B27/20 , B32B15/082 , B32B27/26 , B32B7/12 , B32B27/32 , B32B27/36 , B32B27/38 , C09J163/00 , C09J163/04 , H01L21/683 , H01L21/78 , C09J161/12
摘要： The present invention relates to an adhesive composition for a semiconductor including: a thermoplastic resin having a glass transition temperature of −10° C. to 20° C.; a curing agent containing a phenol resin having a softening point of 70° C. or more; a solid epoxy resin; and a liquid epoxy resin, wherein a weight ratio of the total contents of the solid epoxy resin and the liquid epoxy resin to the thermoplastic resin is 1.6 to 2.6, an adhesive film for a semiconductor including the adhesive composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive composition for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.
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公开(公告)号：US10707187B2
公开(公告)日：2020-07-07
申请号：US15757197
申请日：2016-11-04
申请人： LG Chem, Ltd.
发明人： Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Kwang Joo Lee , Seung Hee Nam , Young Kook Kim
IPC分类号： H01L25/065 , H01L23/00 , H01L23/28 , H01L23/495 , H01L21/56 , H01L23/31 , H01L25/00
摘要： The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.
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