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公开(公告)号:US10991678B2
公开(公告)日:2021-04-27
申请号:US16884559
申请日:2020-05-27
Applicant: LG Chem, Ltd.
Inventor: Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Kwang Joo Lee , Seung Hee Nam , Young Kook Kim
IPC: H01L21/56 , H01L25/065 , H01L23/00 , H01L23/28 , H01L23/495 , H01L23/31 , H01L25/00
Abstract: The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.
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公开(公告)号:US09868881B2
公开(公告)日:2018-01-16
申请号:US14306933
申请日:2014-06-17
Applicant: LG CHEM, LTD.
Inventor: Se Ra Kim , Suk Ky Chang , Byung Kyu Jung , Yoon Tae Hwang , Cha Hun Ku , Sung Jong Kim , Se Woo Yang , Hyo Sook Joo , Min Soo Park
IPC: B32B41/00 , C09J7/02 , H01M2/10 , H01M10/04 , H01M6/00 , H01M10/02 , B32B37/02 , H01M4/04 , B32B27/36 , B32B27/28 , B32B27/40 , B32B27/30 , B32B27/38 , C09J133/08
CPC classification number: C09J7/241 , B32B27/285 , B32B27/308 , B32B27/36 , B32B27/38 , B32B27/40 , B32B37/02 , C09J7/22 , C09J7/245 , C09J7/25 , C09J7/26 , C09J7/29 , C09J133/08 , C09J2203/33 , C09J2401/006 , C09J2433/00 , C09J2433/006 , C09J2463/00 , C09J2463/006 , C09J2475/00 , C09J2475/006 , H01M2/10 , H01M4/04 , H01M6/005 , H01M10/02 , H01M10/04 , H01M10/0431 , H01M10/049 , Y10T29/49114 , Y10T428/24521 , Y10T428/28 , Y10T428/2852 , Y10T428/287 , Y10T428/2891
Abstract: A swelling tape for filling a gap and a method of filling a gap are provided. The swelling tape can be applied within the gap having a fluid to realize a 3D shape thereby filling the gap, and be used to fix a subject forming the gap as necessary.
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公开(公告)号:US09475961B2
公开(公告)日:2016-10-25
申请号:US13946667
申请日:2013-07-19
Applicant: LG CHEM, LTD.
Inventor: Se Ra Kim , Suk Ky Chang , Sung Jong Kim , Byung Kyu Jung , Cha Hun Ku , Se Woo Yang , Hyo Sook Joo
IPC: H01M2/10 , C09J7/02 , C09J133/08 , B32B27/36 , B32B27/38 , B32B27/40 , B32B27/30 , H01M10/04 , H01M6/00 , H01M10/02 , B32B37/02 , H01M4/04 , B32B27/28
CPC classification number: C09J7/241 , B32B27/285 , B32B27/308 , B32B27/36 , B32B27/38 , B32B27/40 , B32B37/02 , C09J7/22 , C09J7/245 , C09J7/25 , C09J7/26 , C09J7/29 , C09J133/08 , C09J2203/33 , C09J2401/006 , C09J2433/00 , C09J2433/006 , C09J2463/00 , C09J2463/006 , C09J2475/00 , C09J2475/006 , H01M2/10 , H01M4/04 , H01M6/005 , H01M10/02 , H01M10/04 , H01M10/0431 , H01M10/049 , Y10T29/49114 , Y10T428/24521 , Y10T428/28 , Y10T428/2852 , Y10T428/287 , Y10T428/2891
Abstract: A swelling tape for filling a gap and a method of filling a gap are provided. The swelling tape can be applied within the gap having a fluid to realize a 3D shape thereby filling the gap, and be used to fix a subject forming the gap as necessary.
Abstract translation: 提供了用于填充间隙的膨胀带和填充间隙的方法。 膨胀带可以施加在具有流体的间隙内,以实现3D形状,从而填充间隙,并且用于根据需要固定形成间隙的物体。
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公开(公告)号:US20140290829A1
公开(公告)日:2014-10-02
申请号:US14306933
申请日:2014-06-17
Applicant: LG CHEM, LTD.
Inventor: Se Ra Kim , Suk Ky Chang , Byung Kyu Jung , Yoon Tae Hwang , Cha Hun Ku , Sung Jong Kim , Se Woo Yang , Hyo Sook Joo , Min Soo Park
CPC classification number: C09J7/241 , B32B27/285 , B32B27/308 , B32B27/36 , B32B27/38 , B32B27/40 , B32B37/02 , C09J7/22 , C09J7/245 , C09J7/25 , C09J7/26 , C09J7/29 , C09J133/08 , C09J2203/33 , C09J2401/006 , C09J2433/00 , C09J2433/006 , C09J2463/00 , C09J2463/006 , C09J2475/00 , C09J2475/006 , H01M2/10 , H01M4/04 , H01M6/005 , H01M10/02 , H01M10/04 , H01M10/0431 , H01M10/049 , Y10T29/49114 , Y10T428/24521 , Y10T428/28 , Y10T428/2852 , Y10T428/287 , Y10T428/2891
Abstract: A swelling tape for filling a gap and a method of filling a gap are provided. The swelling tape can be applied within the gap having a fluid to realize a 3D shape thereby filling the gap, and be used to fix a subject forming the gap as necessary.
Abstract translation: 提供了用于填充间隙的膨胀带和填充间隙的方法。 膨胀带可以施加在具有流体的间隙内,以实现3D形状,从而填充间隙,并且用于根据需要固定形成间隙的物体。
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公开(公告)号:US20200294972A1
公开(公告)日:2020-09-17
申请号:US16884559
申请日:2020-05-27
Applicant: LG Chem, Ltd.
Inventor: Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Kwang Joo Lee , Seung Hee Nam , Young Kook Kim
IPC: H01L25/065 , H01L23/00 , H01L23/28 , H01L23/495 , H01L21/56 , H01L23/31 , H01L25/00
Abstract: The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.
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公开(公告)号:US10338020B2
公开(公告)日:2019-07-02
申请号:US15529813
申请日:2016-01-29
Applicant: LG CHEM, LTD.
Inventor: Jung Hak Kim , Young Kook Kim , Kwang Joo Lee , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Seung Hee Nam , Ji Ho Han
IPC: G01R15/08 , G01R27/08 , B23H5/00 , G01N27/12 , G01N27/447 , G01N27/04 , G01N27/14 , G01N27/404
Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.
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7.
公开(公告)号:US10759971B2
公开(公告)日:2020-09-01
申请号:US15313441
申请日:2016-04-29
Applicant: LG CHEM, LTD.
Inventor: Hee Jung Kim , Se Ra Kim , Jung Hak Kim , Seung Hee Nam , Jung Ho Jo , Kwang Joo Lee , Young Kook Kim
IPC: B32B7/02 , C09J7/00 , B32B27/28 , B32B27/42 , B32B15/08 , B32B27/06 , B32B15/09 , B32B27/30 , B32B27/34 , B32B27/18 , B32B27/24 , B32B27/16 , B32B15/085 , B32B27/08 , C09J7/10 , C09J201/00 , C09J7/20 , B32B7/06 , H01L23/00 , C08L63/00 , C09D163/00 , B32B27/20 , B32B15/082 , B32B27/26 , B32B7/12 , B32B27/32 , B32B27/36 , B32B27/38 , C09J163/00 , C09J163/04 , H01L21/683 , H01L21/78 , C09J161/12
Abstract: The present invention relates to an adhesive composition for a semiconductor including: a thermoplastic resin having a glass transition temperature of −10° C. to 20° C.; a curing agent containing a phenol resin having a softening point of 70° C. or more; a solid epoxy resin; and a liquid epoxy resin, wherein a weight ratio of the total contents of the solid epoxy resin and the liquid epoxy resin to the thermoplastic resin is 1.6 to 2.6, an adhesive film for a semiconductor including the adhesive composition for a semiconductor, a dicing die bonding film including an adhesive layer including the adhesive composition for a semiconductor, and a method for dicing a semiconductor wafer using the dicing die bonding film.
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公开(公告)号:US10707187B2
公开(公告)日:2020-07-07
申请号:US15757197
申请日:2016-11-04
Applicant: LG Chem, Ltd.
Inventor: Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Kwang Joo Lee , Seung Hee Nam , Young Kook Kim
IPC: H01L25/065 , H01L23/00 , H01L23/28 , H01L23/495 , H01L21/56 , H01L23/31 , H01L25/00
Abstract: The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device capable of reducing the uppermost semiconductor chip damage and stably performing wire bonding even if an excessive force is applied during a die bonding process or a wire bonding process, and a method for manufacturing the semiconductor device.
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公开(公告)号:US10526513B2
公开(公告)日:2020-01-07
申请号:US14782200
申请日:2014-12-12
Applicant: LG CHEM, LTD.
Inventor: Young Kook Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Jung Hak Kim , Seung Hee Nam , Kwang Joo Lee
IPC: C09J11/08 , C09J133/04 , C09J7/20 , C08K5/5415 , H01L21/683
Abstract: There are provided a composition for forming an adhesive layer of a dicing film, including: a polymer additive including at least one polymer selected from the group consisting of a polymer containing a (meth)acrylate-based functional group and a non-polar functional group, a (meth)acrylate-based polymer containing at least one fluorine, and a silicon-modified (meth)acrylate-based polymer containing a reactive functional group; an adhesive binder; and a photoinitiator, wherein a weight ratio of the polymer additive to the adhesive binder is 0.01% to 4.5%, a dicing film including an adhesive layer including the composition, a dicing die bonding film including the dicing film, and a method for dicing a semiconductor wafer using the dicing die bonding film.
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公开(公告)号:US10324016B2
公开(公告)日:2019-06-18
申请号:US15529787
申请日:2016-01-29
Applicant: LG CHEM, LTD.
Inventor: Young Kook Kim , Jung Hak Kim , Hee Jung Kim , Se Ra Kim , Jung Ho Jo , Kwang Joo Lee , Seung Hee Nam , Ji Ho Han
IPC: G01R15/08 , G01N27/04 , G01N27/06 , G01N27/12 , G01N27/14 , G01N27/62 , G01N15/08 , G01N27/333 , G01N13/00
Abstract: The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of applying a voltage to the polymer film, while at least one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.
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