公开(公告)号：US09818891B2

公开(公告)日：2017-11-14

申请号：US14985113

申请日：2015-12-30

Applicant: LG ELECTRONICS INC.

Inventor： Kwangyoung Lim ,  Kangseok Moon ,  Jeonghun Son ,  Sehwon Ahn

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/05 ,  H01L31/068

CPC classification number: H01L31/022425 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell module and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell module includes applying a low melting point metal on an electrode included in each of a plurality of solar cells, melting the low melting point metal to form a contact layer on the electrode, generating an ultrasonic vibration in the contact layer to remove a surface oxide layer formed on a surface of the electrode, melting a surface metal of the electrode and the contact layer to form a metal connection layer on the surface of the electrode, and connecting the metal connection layer to an interconnector.

公开(公告)号：US20150083203A1

公开(公告)日：2015-03-26

申请号：US14394642

申请日：2013-04-02

Applicant: LG ELECTRONICS INC.

Inventor： Soohyun Kim ,  Hongcheol Lee ,  Jinwon Chung ,  Sehwon Ahn

IPC: H01L31/0368 ,  H01L31/077 ,  H01L31/0376

CPC classification number: H01L31/03685 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/077 ,  Y02E10/545 ,  Y02E10/548

Abstract: A thin film solar cell includes a substrate, a first electrode and a second electrode positioned on one surface of the substrate, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. At least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx).

Abstract translation: 薄膜太阳能电池包括位于基板的一个表面上的基板，第一电极和第二电极以及位于第一电极和第二电极之间的光电转换单元。 光电转换单元包括多个光电转换层，每个光电转换层包括p型半导体层，i型半导体层和n型半导体层。 多个光电转换层中的至少一个p型半导体层含有微晶硅（mc-Si）和非晶氧化硅（a-SiOx）。

公开(公告)号：US10658529B2

公开(公告)日：2020-05-19

申请号：US14297330

申请日：2014-06-05

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun Ji ,  Seungjik Lee ,  Sehwon Ahn

IPC: H01L31/0224 ,  H01L21/30 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/0747

Abstract: A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.

公开(公告)号：US10600926B2

公开(公告)日：2020-03-24

申请号：US16393591

申请日：2019-04-24

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun Ji ,  Sehwon Ahn

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/068

Abstract: A solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode on the first semiconductor region, a second electrode on the back surface of the semiconductor substrate, and a second semiconductor region positioned between the semiconductor substrate and the second electrode and doped with impurities of a second conductive type opposite the first conductive type, wherein the second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.

公开(公告)号：US10573770B2

公开(公告)日：2020-02-25

申请号：US15097897

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho Kim ,  Heonmin Lee ,  Kwangsun Ji ,  Youngjoo Eo ,  Junghoon Choi ,  Sehwon Ahn

IPC: H01L31/18 ,  H01L31/0376 ,  H01L31/20 ,  H05K3/18 ,  C25D7/12 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H05K3/24

Abstract: Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

公开(公告)号：US10312386B2

公开(公告)日：2019-06-04

申请号：US15416673

申请日：2017-01-26

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun Ji ,  Sehwon Ahn

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/02 ,  H01L31/068

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a semiconductor substrate, a first semiconductor region positioned at a front surface or a back surface of the semiconductor substrate and doped with impurities of a first conductive type, a first electrode connected to the first semiconductor region, and a second electrode connected to the back surface of the semiconductor substrate. The second electrode is formed of a metal foil, and an air gap is formed between the second electrode formed of the metal foil and the back surface of the semiconductor substrate.

公开(公告)号：US09711667B2

公开(公告)日：2017-07-18

申请号：US15097870

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho Kim ,  Heonmin Lee ,  Kwangsun Ji ,  Youngjoo Eo ,  Junghoon Choi ,  Sehwon Ahn

IPC: H01L31/00 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/0224 ,  H05K3/18 ,  C25D7/12 ,  H01L31/18 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H05K3/24

CPC classification number: H01L31/03762 ,  C25D7/126 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/1884 ,  H01L31/20 ,  H01L31/202 ,  H05K3/188 ,  H05K3/246 ,  H05K2201/0108 ,  H05K2201/0326 ,  Y02E10/50

Abstract: Discussed is a solar cell including a single crystalline semiconductor substrate having a first transparent conductive oxide layer positioned on a non-single crystalline emitter layer; a second transparent conductive oxide layer positioned over a rear surface of the single crystalline semiconductor substrate; a first electrode part including a first seed layer directly positioned on the first transparent conductive oxide layer; and a second electrode part including a second seed layer directly positioned on the second transparent conductive oxide layer, wherein the first transparent conductive oxide layer and the first seed layer have different conductivities, and wherein the second transparent conductive oxide layer and the second seed layer have different conductivities.

公开(公告)号：US08691616B2

公开(公告)日：2014-04-08

申请号：US13671289

申请日：2012-11-07

Applicant: LG Electronics Inc.

Inventor： Soohyun Kim ,  Hyun Lee ,  Jinwon Chung ,  Sehwon Ahn

IPC: H01L21/00 ,  H01L21/44

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

Abstract: A method for manufacturing a thin film solar cell includes depositing a front electrode on a substrate in a chamber, etching the front electrode formed on the substrate to form an uneven portion on the surface of the front electrode, forming a photoelectric conversion unit on the front electrode, and forming a back electrode on the photoelectric conversion unit. The depositing of the front electrode includes depositing the front electrode while reducing a process pressure of the chamber from a first pressure to a second pressure lower than the first pressure. The etching of the front electrode form the uneven portion of the front electrode so that a top portion of the uneven portion includes a portion formed at the second pressure.

Abstract translation: 一种薄膜太阳能电池的制造方法，其特征在于，在前述电极的基板的表面上形成前面的电极，在前述电极的表面形成凹凸部， 电极，并在光电转换单元上形成背电极。 前电极的沉积包括沉积前电极，同时将室的处理压力从第一压力降低到低于第一压力的第二压力。 前电极的蚀刻形成前电极的不平坦部分，使得不平坦部分的顶部包括形成在第二压力下的部分。