Abstract:
A coil member according to an embodiment comprises: a substrate having a first surface and a second surface opposite to the first surface; a first circuit pattern disposed on the first surface; and a plurality of bridge portions protruding from an end of the substrate, wherein the bridge portions are integrally formed with the substrate, and a shield layer is disposed on the bridge portions.
Abstract:
An antenna module according to an embodiment of the present invention comprises: a substrate that includes a ground portion and a dielectric portion; a first antenna that has a length corresponding to a first frequency band and is located on one side of a first edge of the substrate; a second antenna that has a length corresponding to a second frequency band and is located on one side of a second edge of the substrate; and a stub that is located on the one side of the first edge or the one side of the second edge so as to be between the first antenna and the second antenna. The stub is spaced a first distance from the first antenna and spaced a second distance from the second antenna, wherein the first distance and the second distance are set on the basis of a first wavelength band and a second wavelength band which correspond to the first frequency band and the second frequency band.
Abstract:
Embodiments provide a light emitting device including a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a sub-mount, first and second metal pads disposed on the sub-mount and electrically spaced apart from one another, a one first bump disposed between the first conductive semiconductor layer and the first metal pad and a second bump located between the second conductive semiconductor layer and the second metal pad. A plurality of active areas in which The first semiconductor layer and the active layer are disposed are spaced apart from one another when viewed in plan.
Abstract:
A coil member, according to an embodiment, comprises: a substrate comprising a first surface and a second surface that is opposite to the first surface; a wiring pattern disposed on the substrate; and a metal coating pattern which is connected to the wiring pattern, the metal coating pattern being thinner than the wiring pattern.
Abstract:
A light emitting device includes a body having a cavity and a step difference structure around the cavity, a plurality of electrodes in the cavity, a light emitting chip in the cavity, a transparent window having an outer portion provided on the step difference structure to cover the cavity, and an adhesive member between the transparent window and the body. The adhesive member includes a first adhesive member between an outer bottom surface of the transparent window and a bottom of the step difference structure and a second adhesive member between the outer portion of the transparent window and the body.
Abstract:
An embodiment discloses a semiconductor element package and a light-emitting device comprising same. The semiconductor element package comprises: a body comprising a cavity; a first electrode and a second electrode arranged on the bottom surface of the cavity; a semiconductor element arranged on the first electrode; a protective element arranged on the first electrode and spaced apart from the semiconductor element; a first wire electrically connecting the semiconductor element and the second electrode; and a second wire electrically connecting the protective element and the second electrode. The second electrode is arranged to be spaced apart from the first electrode in a first direction. The second electrode overlaps the semiconductor element in the first direction. The protective element is arranged to deviate from the semiconductor element in a second direction that is perpendicular to the first direction. The first electrode comprises a groove arranged between the semiconductor element and the protective element.
Abstract:
Disclosed in an embodiment is a semiconductor device comprising: a substrate; first and second semiconductor layers arranged on the substrate and having different conductive types; a third semiconductor layer arranged between the first semiconductor layer and the second semiconductor layer; a first electrode arranged on the first semiconductor layer so as to be electrically connected to the first semiconductor layer; a second electrode arranged on the second semiconductor layer so as to be electrically connected to the second semiconductor layer; and a first insulating layer arranged, between the first electrode and the second electrode, on the exposed first, second and third semiconductor layers, wherein a first end part, close to the second electrode, among both end parts of the first electrode, and/or a second end part, which is both end parts of the second electrode, has an electric field dispersion part.
Abstract:
An embodiment discloses a semiconductor device package comprising: a substrate; an electrode disposed on the substrate; a semiconductor device and a protective device which are disposed on the electrode; a dummy electrode disposed on the substrate and spaced apart from the electrode along the edge of the substrate; a reflective member disposed on the dummy electrode and having an outer surface, an inner surface surrounding the semiconductor device and forming a cavity, and a bottom surface facing the substrate; and a light-transmitting member disposed on the reflective member and covering the cavity, wherein the inner surface includes a first surface adjacent to the substrate and a second surface extending from the first surface to the light-transmitting member and having a parabolic shape, and the bottom surface of the reflective member has a first recess disposed on the protective device between the dummy electrode and the inner surface.
Abstract:
A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4×E18 atoms/cm3.
Abstract:
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer; a first electrode pad on the first conductive semiconductor layer; a second electrode pad on the second conductive semiconductor layer; and a current blocking pattern overlapping an edge of at least one of the first and second electrode pads.