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1.发明申请公开(公告)号：US20160358808A1
公开(公告)日：2016-12-08
申请号：US15169576
申请日：2016-05-31
发明人： Eric Russell Madsen , Narudha Tai Ben-Yuhmin , Michael Christensen , Chris Erick Karlsrud , Joseph Hung-chi Wei , Linh Hoang , Alasdair Dent
IPC分类号： H01L21/687 , C23C16/455 , C23C16/458 , C23C16/50
CPC分类号： H01L21/68771 , C23C16/45565 , C23C16/458 , C23C16/50 , H01L21/6719 , H01L21/67346 , H01L21/68735 , H01L21/68764
摘要： In one aspect, several apparatuses are described that allow a processing chamber designed for plasma-enhanced chemical vapor deposition on 300 mm wafers to be performed on 200 mm wafers. More specifically, a modified pedestal, carrier plate, and showerhead are described that have been designed for 200 mm wafers and are compatible with 300 mm wafer processing chambers. It has further been observed that deposited films using the modified 200 mm apparatuses are comparable in quality with films deposited with the 300 mm devices they replace.
摘要翻译： 在一个方面，描述了允许在200mm晶片上执行在300mm晶片上设计用于等离子体增强化学气相沉积的处理室的几个装置。 更具体地，描述了已经设计用于200mm晶片并且与300mm晶片处理室兼容的改进的基座，承载板和喷头。 进一步观察到，使用改进的200mm装置的沉积膜在质量上与用其替代的300mm装置沉积的膜相当。
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公开(公告)号：US20200152452A1
公开(公告)日：2020-05-14
申请号：US16740128
申请日：2020-01-10
发明人： Bart J. van Schravendijk , Akhil Singhal , Joseph Hung-chi Wei , Bhadri N. Varadarajan , Kevin M. McLaughlin , Casey Holder , Ananda K. Banerji
IPC分类号： H01L21/02 , H01L23/29 , H01L21/56 , H01L43/12 , H01L43/08 , H01L43/02 , H01J37/32 , C23C16/50 , C23C16/56 , C23C16/515 , C23C16/34 , C23C16/32
摘要： Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.
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公开(公告)号：US20170323785A1
公开(公告)日：2017-11-09
申请号：US15279314
申请日：2016-09-28
IPC分类号： H01L21/02 , H01L43/08 , H01L43/02 , C23C16/50 , C23C16/24 , C23C16/455 , H01J37/32 , H01L43/12
CPC分类号： H01L21/02274 , C23C16/325 , C23C16/345 , C23C16/50 , C23C16/515 , C23C16/56 , H01J37/32009 , H01J37/32082 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J2237/3321 , H01J2237/334 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02211 , H01L21/0228 , H01L21/0234 , H01L21/02348 , H01L21/56 , H01L23/291 , H01L43/02 , H01L43/08 , H01L43/12
摘要： Methods of depositing conformal, dense silicon-containing films having low hydrogen content are provided herein. Methods involve pulsing a plasma while exposing a substrate to a silicon-containing precursor and reactant to facilitate a primarily radical-based pulsed plasma enhanced chemical vapor deposition process for depositing a conformal silicon-containing film. Methods also involve periodically performing a post-treatment operation whereby, for every about 20 Å to about 50 Å of film deposited using pulsed plasma PECVD, the deposited film is exposed to an inert plasma to densify and reduce hydrogen content in the deposited film.
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公开(公告)号：US10763107B2
公开(公告)日：2020-09-01
申请号：US16740128
申请日：2020-01-10
发明人： Bart J. van Schravendijk , Akhil Singhal , Joseph Hung-chi Wei , Bhadri N. Varadarajan , Kevin M. McLaughlin , Casey Holder , Ananda K. Banerji
IPC分类号： H01L21/02 , H01L21/56 , H01L43/12 , C23C16/56 , C23C16/34 , H01L23/29 , C23C16/515 , H01L43/08 , H01L43/02 , H01J37/32 , C23C16/50 , C23C16/32
摘要： Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300° C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.
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公开(公告)号：US10157736B2
公开(公告)日：2018-12-18
申请号：US15279310
申请日：2016-09-28
发明人： Bart J. van Schravendijk , Akhil Singhal , Joseph Hung-chi Wei , Bhadri N. Varadarajan , Kevin M. McLaughlin , Casey Holder , Ananda K. Banerji
IPC分类号： H01L21/56 , C23C16/32 , C23C16/34 , C23C16/515 , C23C16/56 , H01L21/02 , C23C16/50 , H01J37/32 , H01L43/02 , H01L43/08 , H01L43/12 , H01L23/29
摘要： Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.
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公开(公告)号：US10566186B2
公开(公告)日：2020-02-18
申请号：US16179809
申请日：2018-11-02
发明人： Bart J. van Schravendijk , Akhil Singhal , Joseph Hung-chi Wei , Bhadri N. Varadarajan , Kevin McLaughlin , Casey Holder , Ananda Banerji
IPC分类号： H01L21/02 , C23C16/32 , C23C16/34 , C23C16/56 , H01L43/12 , H01L21/56 , H01L23/29 , C23C16/515 , H01J37/32 , C23C16/50 , H01L43/02 , H01L43/08
摘要： Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.
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公开(公告)号：US20190157078A1
公开(公告)日：2019-05-23
申请号：US16179809
申请日：2018-11-02
发明人： Bart J. van Schravendijk , Akhil Singhal , Joseph Hung-chi Wei , Bhadri N. Varadarajan , Kevin McLaughlin , Casey Holder , Ananda Banerji
IPC分类号： H01L21/02 , H01L23/29 , H01J37/32 , C23C16/56 , C23C16/515 , C23C16/34 , C23C16/50 , H01L21/56 , H01L43/12 , H01L43/08 , H01L43/02 , C23C16/32
CPC分类号： H01L21/02274 , C23C16/325 , C23C16/345 , C23C16/50 , C23C16/515 , C23C16/56 , H01J37/32009 , H01J37/32082 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J2237/3321 , H01J2237/334 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02211 , H01L21/0228 , H01L21/0234 , H01L21/02348 , H01L21/56 , H01L23/291 , H01L43/02 , H01L43/08 , H01L43/12
摘要： Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.
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公开(公告)号：US20170323803A1
公开(公告)日：2017-11-09
申请号：US15279310
申请日：2016-09-28
发明人： Bart J. van Schravendijk , Akhil Singhal , Joseph Hung-chi Wei , Bhadri N. Varadarajan , Kevin M. McLaughlin , Casey Holder , Ananda K. Banerji
CPC分类号： H01L21/02274 , C23C16/325 , C23C16/345 , C23C16/50 , C23C16/515 , C23C16/56 , H01J37/32009 , H01J37/32082 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J2237/3321 , H01J2237/334 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02211 , H01L21/0228 , H01L21/0234 , H01L21/02348 , H01L21/56 , H01L23/291 , H01L43/02 , H01L43/08 , H01L43/12
摘要： Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.
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