利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

88 条记录 (耗时 0.026 秒)

    Method of making a polymer device
    1.
    发明申请
    Method of making a polymer device 有权
    制造聚合物装置的方法

    公开(公告)号：US20070071881A1

    公开(公告)日：2007-03-29

    申请号：US10566984

    申请日：2004-08-11

    申请人： Lay-lay Chua ,  Peter Ho ,  Henning Sirringhaus ,  Richard Friend

    发明人： Lay-lay Chua ,  Peter Ho ,  Henning Sirringhaus ,  Richard Friend

    IPC分类号： B05D5/12 ,  B05C11/00

    CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0028

    摘要： A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.

    摘要翻译： 一种制造具有第一和第二电极的晶体管的方法，半导体层和电介质层; 所述半导体层包括半导体聚合物，所述介电层包含绝缘聚合物; 其特征在于所述方法包括以下步骤：（i）在第一电极上沉积含有用于形成半导体层的材料的溶液层和用于形成介电层的材料; 和（ii）任选地固化在步骤（i）中沉积的层; 其中，在步骤（i）中，选择溶液中的（用于形成介电层的材料）的溶剂干燥时间，第一电极的温度和重量比：（用于形成半导体层的材料），使得 用于形成半导体层的材料和用于形成电介质层相的材料通过自组织分离，以在用于形成半导体层的材料和用于形成电介质层的材料之间形成界面。

    Method of making a polymer device
    5.
    发明授权
    Method of making a polymer device 有权
    制造聚合物装置的方法

    公开(公告)号：US07718549B2

    公开(公告)日：2010-05-18

    申请号：US10566984

    申请日：2004-08-11

    申请人： Lay-lay Chua ,  Peter Kian-Hoon Ho ,  Henning Sirringhaus ,  Richard Henry Friend

    发明人： Lay-lay Chua ,  Peter Kian-Hoon Ho ,  Henning Sirringhaus ,  Richard Henry Friend

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0028

    摘要： A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.

    摘要翻译： 一种制造具有第一和第二电极的晶体管的方法，半导体层和电介质层; 所述半导体层包括半导体聚合物，所述介电层包含绝缘聚合物; 其特征在于所述方法包括以下步骤：（i）在第一电极上沉积含有用于形成半导体层的材料的溶液层和用于形成介电层的材料; 和（ii）任选地固化在步骤（i）中沉积的层; 其中，在步骤（i）中，选择溶液中的（用于形成介电层的材料）的溶剂干燥时间，第一电极的温度和重量比：（用于形成半导体层的材料），使得 用于形成半导体层的材料和用于形成电介质层相的材料通过自组织分离，以在用于形成半导体层的材料和用于形成电介质层的材料之间形成界面。

    Organic field effect transistors
    7.
    发明申请
    Organic field effect transistors 失效
    有机场效应晶体管

    公开(公告)号：US20050023522A1

    公开(公告)日：2005-02-03

    申请号：US10841807

    申请日：2004-05-07

    申请人： Gitti Frey ,  Kieran Reynolds ,  Henning Sirringhaus ,  Richard Friend

    发明人： Gitti Frey ,  Kieran Reynolds ,  Henning Sirringhaus ,  Richard Friend

    IPC分类号： H01L29/76 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L29/94 ,  H01L31/062

    CPC分类号： H01L51/0516 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

    摘要： A field effect transistor is provided which comprises a gate electrode, a source electrode, a drain electrode, at least one organic semiconducting layer, and a hole transport layer for transferring holes from said source and drain electrodes to said organic semiconducting layer, wherein said hole transport layer comprises a layered metal chalcogenide. Processes for depositing a thin layer of a layered metal dichalcogenide on a substrate and for producing top gate structures on a layered metal chalcogenide layer in the manufacture of field effect transistors according to the invention are also provided.

    摘要翻译： 提供一种场效应晶体管，其包括栅电极，源电极，漏电极，至少一个有机半导体层和用于将空穴从所述源电极和漏电极传送到所述有机半导体层的空穴传输层，其中所述孔 传输层包括层状金属硫族化物。 还提供了在根据本发明的场效应晶体管的制造中，在层叠的金属硫族化物层上沉积层状金属二硫属元素的薄层并在基板上形成顶栅结构的工艺。