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    Semiconductor device comprising a conductive region
    2.
    发明授权
    Semiconductor device comprising a conductive region 有权
    包括导电区域的半导体器件

    公开(公告)号：US09159791B2

    公开(公告)日：2015-10-13

    申请号：US13489467

    申请日：2012-06-06

    申请人： Wei-Lin Chen ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Chih-Chung Wang

    发明人： Wei-Lin Chen ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Chih-Chung Wang

    IPC分类号： H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L21/225 ,  H01L21/265 ,  H01L29/45

    CPC分类号： H01L29/0878 ,  H01L21/2255 ,  H01L21/2257 ,  H01L21/26586 ,  H01L29/0653 ,  H01L29/0873 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/7809

    摘要： A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate; a deep well disposed in the semiconductor substrate; a first doped region disposed in the deep well, wherein the first doped region contacts the buried layer; a conductive region having the first conductivity type surrounding and being adjacent to the first doped region, wherein the conductive region has a concentration higher than the first doped region; a first heavily doped region disposed in the first doped region; a well having a second conductivity type disposed in the deep well; a second heavily doped region disposed in the well; a gate disposed on the semiconductor substrate between the first heavily doped region and the second heavily doped region; and a first trench structure and a second trench structure, wherein a depth of the second trench structure is substantially deeper than a depth of the buried layer.

    摘要翻译： 半导体器件包括半导体衬底，设置在半导体衬底中的掩埋层; 深井设置在半导体衬底中; 设置在所述深阱中的第一掺杂区，其中所述第一掺杂区接触所述掩埋层; 导电区域，具有围绕并邻近第一掺杂区域的第一导电类型，其中导电区域的浓度高于第一掺杂区域; 设置在所述第一掺杂区域中的第一重掺杂区域; 具有设置在深井中的具有第二导电类型的阱; 设置在井中的第二重掺杂区域; 设置在所述第一重掺杂区域和所述第二重掺杂区域之间的所述半导体衬底上的栅极; 以及第一沟槽结构和第二沟槽结构，其中所述第二沟槽结构的深度比所述掩埋层的深度更深。

    High voltage semiconductor device
    3.
    发明授权
    High voltage semiconductor device 有权
    高压半导体器件

    公开(公告)号：US08890144B2

    公开(公告)日：2014-11-18

    申请号：US13414723

    申请日：2012-03-08

    申请人： Pao-An Chang ,  Ching-Ming Lee ,  Te-Yuan Wu ,  Chih-Chung Wang ,  Wen-Fang Lee ,  Wei-Lun Hsu

    发明人： Pao-An Chang ,  Ching-Ming Lee ,  Te-Yuan Wu ,  Chih-Chung Wang ,  Wen-Fang Lee ,  Wei-Lun Hsu

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

    CPC分类号： H01L27/0629 ,  H01L29/0634

    摘要： A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.

    摘要翻译： 高电压半导体器件包括衬底，位于衬底上的绝缘层和位于绝缘层上的硅层。 硅层还包括至少第一掺杂条，分别在硅层的两个相对端形成并电连接到第一掺杂条的两个端子掺杂区和多个第二掺杂条。 第一掺杂带和端子掺杂区包括第一导电类型，第二掺杂条包括第二导电类型，第一导电类型和第二导电类型是互补的。 交替布置第一掺杂条和第二掺杂条。

    Method of fabricating solar cell
    4.
    发明授权
    Method of fabricating solar cell 有权
    制造太阳能电池的方法

    公开(公告)号：US08852990B2

    公开(公告)日：2014-10-07

    申请号：US13589179

    申请日：2012-08-20

    申请人： Wei-Lin Chen ,  Chih-Chung Wang ,  Chiu-Te Lee ,  Ke-Feng Lin

    发明人： Wei-Lin Chen ,  Chih-Chung Wang ,  Chiu-Te Lee ,  Ke-Feng Lin

    IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0236

    CPC分类号： H01L31/18 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes the following steps. At first, a substrate including a doped layer is provided. Subsequently, a patterned material layer partially overlapping the doped layer is formed on the substrate, and a first metal layer is conformally formed on the patterned material layer and the doped layer. Furthermore, a patterned mask layer totally overlapping the patterned material layer is formed on the first metal layer, and a second metal layer is formed on the doped layer not overlapped by the patterned material layer. Then, the patterned mask layer, the first metal layer between the patterned mask layer and the patterned material layer and a part of the patterned material layer are removed.

    摘要翻译： 制造太阳能电池的方法包括以下步骤。 首先，提供包括掺杂层的衬底。 随后，在衬底上形成部分地与掺杂层重叠的图案化材料层，并且第一金属层保形地形成在图案化材料层和掺杂层上。 此外，在第一金属层上形成与图案化材料层完全重叠的图案化掩模层，并且在不与图案化材料层重叠的掺杂层上形成第二金属层。 然后，去除图案化掩模层，图案化掩模层和图案化材料层之间的第一金属层和图案化材料层的一部分。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08698247B2

    公开(公告)日：2014-04-15

    申请号：US13156352

    申请日：2011-06-09

    申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Wen-Fang Lee ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee

    发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Wen-Fang Lee ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0277 ,  H01L21/761 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0623 ,  H01L27/0922

    摘要： The present invention provides a semiconductor device including a substrate, a deep well, a high-voltage well, and a doped region. The substrate and the high-voltage well have a first conductive type, and the deep well and the doped region have a second conductive type different from the first conductive type. The substrate has a high-voltage region and a low-voltage region, and the deep well is disposed in the substrate in the high-voltage region. The high-voltage well is disposed in the substrate between the high-voltage region and the low-voltage region, and the doped region is disposed in the high-voltage well. The doped region and the high-voltage well are electrically connected to a ground.

    摘要翻译： 本发明提供一种包括衬底，深阱，高压阱和掺杂区的半导体器件。 衬底和高压阱具有第一导电类型，并且深阱和掺杂区具有不同于第一导电类型的第二导电类型。 衬底具有高电压区域和低电压区域，并且深阱设置在高压区域中的衬底中。 高电压阱设置在高电压区域和低电压区域之间的衬底中，掺杂区域设置在高压阱中。 掺杂区和高电压阱电连接到地。

    HIGH VOLTAGE SEMICONDUCTOR DEVICE
    6.
    发明申请
    HIGH VOLTAGE SEMICONDUCTOR DEVICE 有权
    高电压半导体器件

    公开(公告)号：US20130234141A1

    公开(公告)日：2013-09-12

    申请号：US13414723

    申请日：2012-03-08

    申请人： Pao-An Chang ,  Ching-Ming Lee ,  Te-Yuan Wu ,  Chih-Chung Wang ,  Wen-Fang Lee ,  Wei-Lun Hsu

    发明人： Pao-An Chang ,  Ching-Ming Lee ,  Te-Yuan Wu ,  Chih-Chung Wang ,  Wen-Fang Lee ,  Wei-Lun Hsu

    IPC分类号： H01L27/088

    CPC分类号： H01L27/0629 ,  H01L29/0634

    摘要： A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.

    摘要翻译： 高电压半导体器件包括衬底，位于衬底上的绝缘层和位于绝缘层上的硅层。 硅层还包括至少第一掺杂条，分别在硅层的两个相对端形成并电连接到第一掺杂条的两个端子掺杂区和多个第二掺杂条。 第一掺杂带和端子掺杂区包括第一导电类型，第二掺杂条包括第二导电类型，第一导电类型和第二导电类型是互补的。 交替布置第一掺杂条和第二掺杂条。

    AUDIO OUTPUT OF A DOCUMENT FROM MOBILE DEVICE
    7.
    发明申请
    AUDIO OUTPUT OF A DOCUMENT FROM MOBILE DEVICE 有权
    来自移动设备的文档的音频输出

    公开(公告)号：US20120109656A1

    公开(公告)日：2012-05-03

    申请号：US13346710

    申请日：2012-01-09

    申请人： Sheng-Yao Shih ,  Yun-Chiang Kung ,  Chiwei Che ,  Chih-Chung Wang

    发明人： Sheng-Yao Shih ,  Yun-Chiang Kung ,  Chiwei Che ,  Chih-Chung Wang

    IPC分类号： G10L13/00

    CPC分类号： G10L13/02 ,  G06F17/212 ,  G10L13/00

    摘要： Architecture for playing a document converted into an audio format to a user of an audio-output capable device. The user can interact with the device to control play of the audio document such as pause, rewind, forward, etc. In more robust implementation, the audio-output capable device is a mobile device (e.g., cell phone) having a microphone for processing voice input. Voice commands can then be input to control play (“reading”) of the document audio file to pause, rewind, read paragraph, read next chapter, fast forward, etc. A communications server (e.g., email, attachments to email, etc.) transcodes text-based document content into an audio format by leveraging a text-to-speech (TTS) engine. The transcoded audio files are then transferred to mobile devices through viable transmission channels. Users can then play the audio-formatted document while freeing hand and eye usage for other tasks.

    摘要翻译： 将音频格式转换成音频输出功能的设备的用户播放文档的架构。 用户可以与设备进行交互以控制音频文档的播放，例如暂停，倒带，转发等。在更稳健的实现中，具有音频输出功能的设备是具有用于处理的麦克风的移动设备（例如，蜂窝电话） 语音输入 然后可以输入语音命令来控制文档音频文件的播放（“读取”）以暂停，倒退，读取段落，阅读下一章节，快进等。通信服务器（例如，电子邮件，电子邮件附件等） ）通过利用文本到语音（TTS）引擎将基于文本的文档内容转码为音频格式。 经转码的音频文件然后通过可行的传输通道传输到移动设备。 然后，用户可以播放音频格式的文档，同时释放手和眼睛的其他任务。

    MOBILE DOCUMENT VIEWER
    8.
    发明申请
    MOBILE DOCUMENT VIEWER 审中-公开
    移动文件浏览器

    公开(公告)号：US20090313574A1

    公开(公告)日：2009-12-17

    申请号：US12139506

    申请日：2008-06-16

    申请人： Sheng-Yao Shih ,  Tsui-Ying Fu ,  Chih-Chung Wang ,  Chih-Yung Chen ,  Shu-Fang Huang ,  Ming-Chieh Chang

    发明人： Sheng-Yao Shih ,  Tsui-Ying Fu ,  Chih-Chung Wang ,  Chih-Yung Chen ,  Shu-Fang Huang ,  Ming-Chieh Chang

    IPC分类号： G06F3/048

    CPC分类号： G06F3/0485 ,  G06F3/0483 ,  G06F16/34 ,  G06F16/9577 ,  H04M1/72522 ,  H04M1/72561

    摘要： Various technologies and techniques are disclosed for a mobile document viewer. Techniques for toggling between document formats are described. A request is received from a user to view a document on a mobile device. The document is retrieved in a first visual format and displayed. A request is received from the user to view the document in a second visual format. The document is retrieved in the second visual format and displayed. The document viewer contains three primary areas. A navigation bar has the most frequently used operations. A page content area follows the navigation bar and can display at least a portion of a document being viewed on the document viewer. A menu area follows the page content area and contains operations that can be performed on the document by a user. Techniques for optimizing the display of images within a document are also described.

    摘要翻译： 针对移动文档查看器公开了各种技术和技术。 描述用于在文档格式之间切换的技术。 从用户接收到在移动设备上查看文档的请求。 以第一种视觉格式检索文档并显示。 从用户接收到以第二视觉格式查看文档的请求。 以第二种视觉格式检索文档并显示。 文档查看器包含三个主要区域。 导航栏具有最常用的操作。 页面内容区域跟随导航栏，并且可以在文档查看器上显示正在查看的文档的至少一部分。 菜单区域在页面内容区域之后，并且包含用户可以在文档上执行的操作。 还描述了用于优化文档内的图像的显示的技术。

    Anode metal treatment and use of said anode in cell
    9.
    发明授权
    Anode metal treatment and use of said anode in cell 失效
    阳极金属处理和使用所述阳极在电池中

    公开(公告)号：US4632890A

    公开(公告)日：1986-12-30

    申请号：US749688

    申请日：1985-06-28

    申请人： Chih-Chung Wang

    发明人： Chih-Chung Wang

    IPC分类号： H01M4/38 ,  H01M4/62 ,  H01M4/04

    CPC分类号： H01M4/628 ,  H01M4/38 ,  Y10T29/49108

    摘要： Gassing is significantly reduced in electrochemical cells having anodes of polycrystalline metals, such as zinc, by heat treatment of the anode metal at a temperature below that of the melting point of the metal for a period of time sufficient to reduce the number of grains in the polycrystalline metal to at least a third of the original number of grains and thereafter using the metal in the formation of the cell anode. With such gassing reduction, the amount of mercury required for amalgamation with the zinc may also be reduced.

    摘要翻译： 通过在低于金属熔点温度的温度下对阳极金属进行热处理足以减少在金属中的晶粒数量的时间内，通过具有诸如锌的多晶金属阳极的电化学电池中的放气明显减少 多晶金属至原来数量的晶粒的至少三分之一，此后在形成电池阳极时使用金属。 随着这种气体减少，与锌合并所需的汞的量也可以减少。

    High-voltage semiconductor device
    10.
    发明授权
    High-voltage semiconductor device 有权
    高压半导体器件

    公开(公告)号：US08592905B2

    公开(公告)日：2013-11-26

    申请号：US13169008

    申请日：2011-06-26

    申请人： Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

    发明人： Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

    IPC分类号： H01L29/66

    CPC分类号： H01L29/8611 ,  H01L27/0255 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/36

    摘要： A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.

    摘要翻译： 公开了一种高压半导体器件。 HV半导体装置包括：基板; 设置在基板中的第一导电类型的阱; 布置在p阱中的第二导电类型的第一掺杂区; 第一隔离结构，设置在第一导电类型的阱中，并且包围第二导电类型的第一掺杂区; 以及设置在第二导电类型的第一掺杂区域和第一隔离结构之间的第二导电类型的第一漂移环。