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28 条记录 (耗时 0.024 秒)

    Sol materials
    1.
    发明授权
    Sol materials 有权
    溶胶材料

    公开(公告)号：US06426371B1

    公开(公告)日：2002-07-30

    申请号：US09346075

    申请日：1999-07-01

    申请人： Lih-Ping Li ,  Li-Mei Chen ,  Chao-Jen Wang ,  Hsin-Hsen Lu

    发明人： Lih-Ping Li ,  Li-Mei Chen ,  Chao-Jen Wang ,  Hsin-Hsen Lu

    IPC分类号： C01B3314

    CPC分类号： C01B33/16 ,  C01B33/145 ,  H01L23/145 ,  H01L23/49894 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention provides a fast-cured sol material, which is produced by hydrolysis and condensation of the following starting materials: 2-60 parts by weight of a silicon alkoxide; 20-98 parts by weight of an alcohol; 0.5-50 parts by weight of an aqueous media; 0.0001-10 parts by weight of a base; 0.001-30 parts by weight of at least one additive; and optionally 0.0001-10 parts by weight of an acid. A coating of the sol material according to the invention can be directly cured (without aging) to obtain a microporous dielectric film without shrinkage or cracks.

    摘要翻译： 本发明提供一种快速固化的溶胶材料，其通过以下原料的水解和缩合制备：2-60重量份的硅烷醇盐; 20-98重量份醇; 0.5-50重量份的水性介质; 0.0001-10重量份的碱; 0.001-30重量份的至少一种添加剂; 和任选的0.0001-10重量份的酸。 根据本发明的溶胶材料的涂层可以直接固化（不老化），以获得没有收缩或裂纹的微孔介电膜。

    Method for enhancing adhesion between layers
    2.
    发明申请
    Method for enhancing adhesion between layers 有权
    提高层间粘附性的方法

    公开(公告)号：US20080233765A1

    公开(公告)日：2008-09-25

    申请号：US11727133

    申请日：2007-03-23

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    IPC分类号： H01L21/469 ,  H01L21/31

    CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

    摘要： A novel method for enhancing interface adhesion between adjacent dielectric layers, particularly between an etch stop layer and an overlying dielectric layer having a low dielectric constant (k) in the formation of metal interconnects during the fabrication of integrated circuits on semiconductor wafer substrates. The method may include providing a substrate, providing an etch stop layer on the substrate, providing an oxygen-rich dielectric pre-layer on the etch stop layer and providing a major dielectric layer on the oxygen-rich dielectric pre-layer. Metal interconnects are then formed in the dielectric layers. The oxygen-rich dielectric pre-layer between the etch stop layer and the upper dielectric layer prevents or minimizes peeling and cracking of the layers induced by stresses that are caused by chemical mechanical planarization of metal layers and/or chip packaging.

    摘要翻译： 一种新颖的方法，用于在半导体晶片衬底上的集成电路制造过程中，在金属互连的形成过程中，增强相邻电介质层之间的界面附着力，特别是在蚀刻停止层和具有低介电常数（k）的上覆电介质层之间。 该方法可以包括提供衬底，在衬底上提供蚀刻停止层，在蚀刻停止层上提供富氧介电预置层，并在富氧电介质预层上提供主要电介质层。 然后在电介质层中形成金属互连。 在蚀刻停止层和上部电介质层之间的富氧介电预层防止或最小化由金属层和/或芯片封装的化学机械平坦化引起的应力引起的层的剥离和破裂。

    Method for low k dielectric deposition
    5.
    发明授权
    Method for low k dielectric deposition 失效
    低k电介质沉积方法

    公开(公告)号：US06753269B1

    公开(公告)日：2004-06-22

    申请号：US10434029

    申请日：2003-05-08

    申请人： Lih-Ping Li ,  Yung-Chen Lu ,  Syun-Ming Jang

    发明人： Lih-Ping Li ,  Yung-Chen Lu ,  Syun-Ming Jang

    IPC分类号： H01L2131

    CPC分类号： H01L21/76835 ,  H01L21/3105 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831

    摘要： The present disclosure provides a method for forming an intermediate trench layer through low k dielectric material deposition in a damascene process for manufacturing semiconductor devices. After depositing a low k dielectric material block, a curing process is applied to the low k dielectric material block for a predetermined curing time period, wherein after the curing time period, the low k dielectric material block forms a first and second low k dielectric layers so as to make the first low k dielectric layer an intermediate trench layer, thereby eliminating the need of an etch stop layer.

    摘要翻译： 本公开提供了一种在用于制造半导体器件的镶嵌工艺中通过低k电介质材料沉积形成中间沟槽层的方法。 在沉积低k介电材料块之后，将固化过程施加到低k电介质材料块上预定的固化时间段，其中在固化时间段之后，低k电介质材料块形成第一和第二低k电介质层 以便使第一低k电介质层成为中间沟槽层，由此不需要蚀刻停止层。

    Method for decreasing a dielectric constant of a low-k film
    7.
    发明申请
    Method for decreasing a dielectric constant of a low-k film 审中-公开
    降低低k膜的介电常数的方法

    公开(公告)号：US20060115980A1

    公开(公告)日：2006-06-01

    申请号：US11130044

    申请日：2005-05-16

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843

    摘要： A method of forming a low dielectric constant film that can be used in a damascene process is disclosed. An organosilicon precursor such as octamethylcyclotrisiloxane (OMCTS) or any other compound that contains Si, C, and H and optionally O is transported into a PECVD chamber with a carrier gas such as CO or CO2 to provide a soft oxidation environment that leads to a higher carbon content and low k value in the deposited film. The carrier gas may replace helium or argon that have a higher bombardment property that can damage the substrate. Since CO and CO2 can contribute carbon to the deposited film, a lower k value is achieved than when an inert carrier gas is employed. The deposited film can be employed, for example, as a dielectric layer in a damascene stack or as an etch stop layer.

    摘要翻译： 公开了一种形成可用于镶嵌工艺中的低介电常数膜的方法。 将诸如八甲基环三硅氧烷（OMCTS）的有机硅前体或含有Si，C和H以及任选的O的任何其它化合物转移到具有载体气体如CO或CO 2的PECVD室中，以提供 软氧化环境导致沉积膜中碳含量较高，k值低。 载气可以代替具有较高轰击性能的氦或氩，这可能损坏基底。 由于CO和CO 2可以对沉积膜贡献碳，所以实现比使用惰性载气时更低的k值。 沉积膜可以用作例如镶嵌层中的介电层或蚀刻停止层。