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    Method for enhancing adhesion between layers
    1.
    发明申请
    Method for enhancing adhesion between layers 有权
    提高层间粘附性的方法

    公开(公告)号：US20080233765A1

    公开(公告)日：2008-09-25

    申请号：US11727133

    申请日：2007-03-23

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    IPC分类号： H01L21/469 ,  H01L21/31

    CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

    摘要： A novel method for enhancing interface adhesion between adjacent dielectric layers, particularly between an etch stop layer and an overlying dielectric layer having a low dielectric constant (k) in the formation of metal interconnects during the fabrication of integrated circuits on semiconductor wafer substrates. The method may include providing a substrate, providing an etch stop layer on the substrate, providing an oxygen-rich dielectric pre-layer on the etch stop layer and providing a major dielectric layer on the oxygen-rich dielectric pre-layer. Metal interconnects are then formed in the dielectric layers. The oxygen-rich dielectric pre-layer between the etch stop layer and the upper dielectric layer prevents or minimizes peeling and cracking of the layers induced by stresses that are caused by chemical mechanical planarization of metal layers and/or chip packaging.

    摘要翻译： 一种新颖的方法，用于在半导体晶片衬底上的集成电路制造过程中，在金属互连的形成过程中，增强相邻电介质层之间的界面附着力，特别是在蚀刻停止层和具有低介电常数（k）的上覆电介质层之间。 该方法可以包括提供衬底，在衬底上提供蚀刻停止层，在蚀刻停止层上提供富氧介电预置层，并在富氧电介质预层上提供主要电介质层。 然后在电介质层中形成金属互连。 在蚀刻停止层和上部电介质层之间的富氧介电预层防止或最小化由金属层和/或芯片封装的化学机械平坦化引起的应力引起的层的剥离和破裂。

    Method for enhancing adhesion between layers in BEOL fabrication
    2.
    发明授权
    Method for enhancing adhesion between layers in BEOL fabrication 有权
    增加BEOL制作中层间粘附性的方法

    公开(公告)号：US07897505B2

    公开(公告)日：2011-03-01

    申请号：US11727133

    申请日：2007-03-23

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Yung-Cheng Lu ,  Hui-Lin Chang ,  Chih-Hsien Lin

    IPC分类号： H01L21/4763 ,  H01L21/00

    CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

    摘要： A novel method for enhancing interface adhesion between adjacent dielectric layers, particularly between an etch stop layer and an overlying dielectric layer having a low dielectric constant (k) in the formation of metal interconnects during the fabrication of integrated circuits on semiconductor wafer substrates. The method may include providing a substrate, providing an etch stop layer on the substrate, providing an oxygen-rich dielectric pre-layer on the etch stop layer and providing a major dielectric layer on the oxygen-rich dielectric pre-layer. Metal interconnects are then formed in the dielectric layers. The oxygen-rich dielectric pre-layer between the etch stop layer and the upper dielectric layer prevents or minimizes peeling and cracking of the layers induced by stresses that are caused by chemical mechanical planarization of metal layers and/or chip packaging.

    摘要翻译： 一种新颖的方法，用于在半导体晶片衬底上的集成电路制造过程中，在金属互连的形成过程中，增强相邻电介质层之间的界面附着力，特别是在蚀刻停止层和具有低介电常数（k）的上覆电介质层之间。 该方法可以包括提供衬底，在衬底上提供蚀刻停止层，在蚀刻停止层上提供富氧介电预置层，并在富氧电介质预层上提供主要电介质层。 然后在电介质层中形成金属互连。 在蚀刻停止层和上部电介质层之间的富氧介电预层防止或最小化由金属层和/或芯片封装的化学机械平坦化引起的应力引起的层的剥离和破裂。

    Method for ultra low-K dielectric deposition
    6.
    发明申请
    Method for ultra low-K dielectric deposition 审中-公开
    超低K电介质沉积方法

    公开(公告)号：US20050048795A1

    公开(公告)日：2005-03-03

    申请号：US10649566

    申请日：2003-08-27

    申请人： Chung-Chi Ko ,  Yung-Cheng Lu ,  Tien-I Bao ,  Hui-Lin Chang ,  Syun-Ming Jang

    发明人： Chung-Chi Ko ,  Yung-Cheng Lu ,  Tien-I Bao ,  Hui-Lin Chang ,  Syun-Ming Jang

    IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02271 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/7682

    摘要： The present invention provides a method of forming a semiconductor structure having an ultra low-K dielectric material that adheres well to the substrate. The method includes depositing a low-K material on the top surface of a substrate at a low temperature of no more than 250° by a CVD or spin-on process. The dielectric material is then cured by placing the substrate with the dielectric film in an environment where the temperature is regulated at about 400° or less as the dielectric film is being subjected to a plasma treatment or an E-beam treatment or UV treatment. The environment may further include one or more gases or a mixture of gases selected from the group consisting of H2, N2, NH3, CO2, all hydride gases and a mixture of these gases.

    摘要翻译： 本发明提供一种形成半导体结构的方法，所述半导体结构具有与基底良好粘合的超低K电介质材料。 该方法包括通过CVD或旋涂工艺在低于250°的低温下在衬底的顶表面上沉积低K材料。 然后通过将介质膜放置在介质膜经受等离子体处理或电子束处理或UV处理的温度调节在约400°或更小的环境中来固化电介质材料。 环境可以进一步包括选自H 2，N 2，NH 3，CO 2，所有氢化物气体和这些气体的混合物的一种或多种气体或气体混合物。

    Method for decreasing a dielectric constant of a low-k film
    8.
    发明申请
    Method for decreasing a dielectric constant of a low-k film 审中-公开
    降低低k膜的介电常数的方法

    公开(公告)号：US20060115980A1

    公开(公告)日：2006-06-01

    申请号：US11130044

    申请日：2005-05-16

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843

    摘要： A method of forming a low dielectric constant film that can be used in a damascene process is disclosed. An organosilicon precursor such as octamethylcyclotrisiloxane (OMCTS) or any other compound that contains Si, C, and H and optionally O is transported into a PECVD chamber with a carrier gas such as CO or CO2 to provide a soft oxidation environment that leads to a higher carbon content and low k value in the deposited film. The carrier gas may replace helium or argon that have a higher bombardment property that can damage the substrate. Since CO and CO2 can contribute carbon to the deposited film, a lower k value is achieved than when an inert carrier gas is employed. The deposited film can be employed, for example, as a dielectric layer in a damascene stack or as an etch stop layer.

    摘要翻译： 公开了一种形成可用于镶嵌工艺中的低介电常数膜的方法。 将诸如八甲基环三硅氧烷（OMCTS）的有机硅前体或含有Si，C和H以及任选的O的任何其它化合物转移到具有载体气体如CO或CO 2的PECVD室中，以提供 软氧化环境导致沉积膜中碳含量较高，k值低。 载气可以代替具有较高轰击性能的氦或氩，这可能损坏基底。 由于CO和CO 2可以对沉积膜贡献碳，所以实现比使用惰性载气时更低的k值。 沉积膜可以用作例如镶嵌层中的介电层或蚀刻停止层。

    SiOCH low k surface protection layer formation by CxHy gas plasma treatment
    10.
    发明授权
    SiOCH low k surface protection layer formation by CxHy gas plasma treatment 有权
    SiOCH低k表面保护层通过CxHy气体等离子体处理形成

    公开(公告)号：US06962869B1

    公开(公告)日：2005-11-08

    申请号：US10270974

    申请日：2002-10-15

    申请人： Tien-I Bao ,  Hsin-Hsien Lu ,  Lih-Ping Li ,  Chung-Chi Ko ,  Aaron Song ,  Syun-Ming Jang

    发明人： Tien-I Bao ,  Hsin-Hsien Lu ,  Lih-Ping Li ,  Chung-Chi Ko ,  Aaron Song ,  Syun-Ming Jang

    IPC分类号： H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/3105 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835

    摘要： A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a CXHY gas which is preferably ethylene. Optionally, hydrogen may be added to the CXHY gas. Another alternative is a two step plasma process involving a first plasma treatment of CXHY or CXHY combined with H2 and a second plasma treatment with H2. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.

    摘要翻译： 描述了保护低k电介质层的方法，其优选由含有Si，O，C和H的材料组成。 对电介质层进行气化等离子体，该等离子体是由优选乙烯的C X H Y气产生的。 任选地，可以将氢气加入到C 1 H 2 H 2 O气体中。 另一种替代方案是涉及第一等离子体处理C X> Y Y or SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >与H 2 H 2结合，并且与H 2 2进行第二等离子体处理。 改进的介电层在镶嵌工艺中提供对抗反射层和阻挡金属层的改善的粘合性。 改进的介电层也具有低CMP速率，其防止划痕缺陷和氧化物凹陷在镶嵌层的表面上邻近金属层发生。 等离子体处理优选在沉积介电层的相同的室中进行。