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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200144215A1

    公开(公告)日：2020-05-07

    申请号：US16082244

    申请日：2016-06-08

    申请人： Mitsubishi Electric Corporation

    发明人： Sho SUZUKI ,  Tsuyoshi OSAGA

    IPC分类号： H01L23/00 ,  H01L29/45

    摘要： A semiconductor substrate (1) has a front surface and a back surface that are opposite each other. A first metal layer (2) is formed on the front surface of the semiconductor substrate (1). A second metal layer (3) for soldering is formed on the first metal layer (2). A third metal layer (5) is formed on the back surface of the semiconductor substrate (1). A fourth metal layer (6) for soldering is formed on the third metal layer (5). The second metal layer (3) has a larger thickness than that of the fourth metal layer (6). The first, third, and fourth metal layers (2, 5, 6) are not divided in a pattern. The second metal layer (3) is divided in a pattern and has a plurality of metal layers electrically connected to each other via the first metal layer (2).

    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240014206A1

    公开(公告)日：2024-01-11

    申请号：US18254665

    申请日：2021-04-26

    申请人： Mitsubishi Electric Corporation

    发明人： Tsuyoshi OSAGA ,  Yasuo ATA ,  Yuki HATA

    IPC分类号： H01L27/06 ,  H01L29/861 ,  H01L29/739

    CPC分类号： H01L27/0664 ,  H01L29/8613 ,  H01L29/7397

    摘要： An IGBT region (2) and a diode region (3) are provided on a semiconductor substrate (1) and have an emitter electrode (16) on a surface of the semiconductor substrate (1). A sense IGBT region (4) is provided on the semiconductor substrate (1), has a smaller area than that of the IGBT region (2), and includes a sense emitter electrode (20) provided on the surface of the semiconductor substrate (1) and separated from the emitter electrode (16). A sense diode region (3) is provided on the semiconductor substrate (1), has a smaller area than that of the diode region (3), and includes a sense anode electrode provided on the surface of the semiconductor substrate (1) and separated from the emitter electrode (16). The sense diode region (3) is separated from the IGBT region (2) by a distance equal to or greater than that of the drift layer (8).

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210233873A1

    公开(公告)日：2021-07-29

    申请号：US15734477

    申请日：2018-11-19

    申请人： Mitsubishi Electric Corporation

    发明人： Takaki ITO ,  Tsuyoshi OSAGA ,  Kota KIMURA

    IPC分类号： H01L23/00 ,  H01L29/40 ,  H01L29/16 ,  H01L23/31

    摘要： An oxide film (4) is provided on an upper surface of the semiconductor substrate (1). A guard ring (3) is provided on the upper surface of the semiconductor substrate (1). An organic insulating film (6) directly contacts the oxide film (4) in a termination region (7) between the guard ring (3) and an outer edge portion of the semiconductor substrate (1). A groove (8) is provided on the upper surface of the semiconductor substrate (1) in the termination region (7). The groove (8) is embedded with the organic insulating film (6).

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230040727A1

    公开(公告)日：2023-02-09

    申请号：US17759134

    申请日：2020-05-13

    申请人： Mitsubishi Electric Corporation

    发明人： Yuki HATA ,  Tsuyoshi OSAGA ,  Yasuo ATA

    IPC分类号： H01L21/768 ,  H01L21/52 ,  H01L21/67 ,  H01L23/492

    摘要： A semiconductor device includes: a semiconductor substrate; an upper surface electrode formed on an upper surface side of the semiconductor substrate; an insulating film formed on the upper surface side of the semiconductor substrate; and a lower surface electrode formed on a lower surface side of the semiconductor substrate and having a larger area than that of the upper surface electrode, wherein the upper surface electrode and the lower surface electrode are electrodes having a compressive stress.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220399291A1

    公开(公告)日：2022-12-15

    申请号：US17624040

    申请日：2019-10-08

    申请人： Mitsubishi Electric Corporation

    发明人： Tsuyoshi OSAGA

    IPC分类号： H01L23/00

    摘要： The present invention relates to a semiconductor device. The semiconductor device includes: a first main electrode provided on an active region; a second main electrode provided on an opposite side of the semiconductor substrate from the first main electrode; a protection film covering a terminal region; and a non-electrolytic plating layer provided on the first main electrode not covered by the protection film, the first main electrode includes a center electrode in a center part and an outer peripheral electrode provided along the center electrode to be separately from the center electrode, the protection film is provided to extend from the terminal region to an end edge portion of the outer peripheral electrode, the center electrode and the outer peripheral electrode include: a first metal layer; and a second metal layer provided on the first metal layer, and the outer peripheral electrode includes a hole part to reach the first metal layer.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200373382A1

    公开(公告)日：2020-11-26

    申请号：US16619430

    申请日：2017-09-07

    申请人： MITSUBISHI ELECTRIC CORPORATION

    发明人： Tsuyoshi OSAGA ,  Yasuo ATA

    IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L27/088

    摘要： A semiconductor device includes, on an upper surface side of an N−-type drift layer, a P-type well layer, an N-type emitter layer, a gate insulation film, and a gate electrode, and includes, on a lower surface side of the N−-type drift layer, an N-type buffer layer, a P-type collector layer, and an N++-type layer. The N++-type layer is partially formed in the N-type buffer layer. The N++-type layer has impurity concentration being higher than impurity concentration of the N-type buffer layer and being equal to or higher than impurity concentration of the P-type collector layer.