公开(公告)号：US20030022520A1

公开(公告)日：2003-01-30

申请号：US09911460

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Alexander A. Demkov ,  Zhiyi Yu ,  Barbara Foley Barenburg

IPC: H01L021/322 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/31691 ,  C30B23/02 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02197 ,  H01L21/02356 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02694 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Light-assisted deposition techniques are used to form the accommodating buffer layer (24).

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅（28）的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 光辅助沉积技术用于形成容纳缓冲层（24）。

公开(公告)号：US20030034500A1

公开(公告)日：2003-02-20

申请号：US09929018

申请日：2001-08-15

Applicant: MOTOROLA, INC.

Inventor： Alexander A. Demkov ,  Zhiyi Yu ,  Jamal Ramdani

IPC: H01L029/74

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L29/267

Abstract: High quality epitaxial layers of monocrystalline materials (106) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating Zintl buffer layer (104) on a silicon wafer. Any lattice mismatch between the monocrystalline layer (106) and the underlying silicon substrate (102) is absorbed by the Zintl interface layer (104).

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料（106）的高质量外延层生长成覆盖单晶衬底（102），例如大的硅晶片。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳的Zintl缓冲层（104）。 单晶层（106）和下层硅衬底（102）之间的任何晶格失配被Zintl界面层（104）吸收。

公开(公告)号：US20030020104A1

公开(公告)日：2003-01-30

申请号：US09911484

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Albert A. Talin ,  Alexander A. Demkov ,  Paige M. Holm

IPC: H01L031/0328 ,  H01L021/336 ,  H01L029/76

CPC classification number: H01L27/0688 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Dual gate field effect transistors exhibiting increased transconductance are fabricated using planar processing techniques.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 表现出增加的跨导的双栅场效应晶体管使用平面处理技术制造。

公开(公告)号：US20040164315A1

公开(公告)日：2004-08-26

申请号：US10372281

申请日：2003-02-25

Applicant: MOTOROLA, INC.

Inventor： Alexander A. Demkov

IPC: H01L029/74

CPC classification number: H01L29/66939 ,  H01L27/20

Abstract: Tunneling piezoelectric switch structures including high quality epitaxial layers of monocrystalline materials (26) grown overlying monocrystalline substrates (22) such as large silicon wafers are disclosed. The structures includes an accommodating buffer layer (24) spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.

Abstract translation: 公开了包括生长在诸如大硅晶片的单晶衬底（22）上的单晶材料（26）的高质量外延层的隧道式压电开关结构。 所述结构包括通过硅氧化物的非晶界面层（28）与硅晶片隔开的容纳缓冲层（24）。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。

公开(公告)号：US20030015711A1

公开(公告)日：2003-01-23

申请号：US09908892

申请日：2001-07-20

Applicant: Motorola, Inc.

Inventor： Albert A. Talin ,  Lyndee L. Hilt ,  Alexander A. Demkov

IPC: H01L029/04

CPC classification number: H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate includes utilizing an intermetallic layer of an intermetallic compound material.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成包括利用金属间化合物材料的金属间化合物层。

公开(公告)号：US20030122130A1

公开(公告)日：2003-07-03

申请号：US10026812

申请日：2001-12-27

Applicant: MOTOROLA, Inc.

Inventor： Alexander A. Demkov ,  Nada A. El-Zein

IPC: H02H003/00

CPC classification number: H01L29/205 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L29/045

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large GaAs wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer is spaced apart from a GaAs substrate by a decoupling layer. The decoupling layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. The accommodating buffer layer is lattice matched to the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying GaAs substrate is taken care of by the decoupling layer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大型GaAs晶片）上。 容纳缓冲层通过去耦层与GaAs衬底间隔开。 去耦层消散应变并允许高品质单晶容纳缓冲层的生长。 容纳缓冲层与上覆单晶材料层晶格匹配。 通过去耦层处理容纳缓冲层和下面的GaAs衬底之间的任何晶格失配。

公开(公告)号：US20030038299A1

公开(公告)日：2003-02-27

申请号：US09934836

申请日：2001-08-23

Applicant: MOTOROLA, INC.

Inventor： Alexander A. Demkov

IPC: H01L029/04

CPC classification number: H01L29/267 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates such as large silicon wafers (22) by forming a compliant substrate for growing the monocrystalline layers (26). One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Abstract translation: 通过形成用于生长单晶层（26）的柔性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底例如大硅晶片（22）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅（28）的非晶界面层与硅晶片（22）间隔开的单晶氧化物层。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层（24）的生长。

公开(公告)号：US20030001207A1

公开(公告)日：2003-01-02

申请号：US09859700

申请日：2001-05-16

Applicant: Motorola, Inc.

Inventor： Jamal Ramdani ,  Alexander A. Demkov ,  Lyndee L. Hilt

IPC: H01L027/01

CPC classification number: C30B25/18 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/0254

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20020072253A1

公开(公告)日：2002-06-13

申请号：US09983854

申请日：2001-10-26

Applicant: MOTOROLA, INC.

Inventor： John L. Edwards JR. ,  Yi Wei ,  Dirk C. Jordan ,  Xiaoming Hu ,  James Bradley Craigo ,  Ravindranath Droopad ,  Zhiyi Yu ,  Alexander A. Demkov

IPC: H01L021/26 ,  H01L021/324 ,  H01L021/302 ,  H01L021/42 ,  H01L021/477 ,  H01L021/461

CPC classification number: C30B25/18 ,  C30B33/00 ,  H01L21/02197 ,  H01L21/02299 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31111 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30

Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Abstract translation: 提供了从单晶衬底的表面去除非晶氧化物的方法。 该方法包括沉积覆盖无定形氧化物的钝化材料。 然后加热单晶衬底，使得无定形氧化物层分解成从表面释放出的至少一种挥发性物质。