摘要:
Subbanks are arranged in four regions of a DRAM macro having a rectangular shape, bank control circuits are arranged in a prescribed region between these subbanks, and internal read/write data buses are arranged in a region different from the region where the bank control circuits are arranged. Since there is no crossing of the bank control circuits and the internal read/write data buses, the bank control circuits can be efficiently arranged to reduce the layout area. Accordingly, a semiconductor integrated circuit device including multi-bank memories which operates stably at high speed can be provided without increase of an area occupied by a chip.
摘要:
A first internal power supply circuit receiving an external power supply voltage for generating a first internal power supply voltage and a second internal power supply circuit receiving the external power supply voltage for generating a second internal power supply voltage are provided within a DRAM. A sense amplifier operates by the first internal power supply voltage. A write driver and a GIO line precharge circuit operate by the second internal power supply voltage. A peripheral circuit operates by the external power supply voltage. As a result, the sense amplifier and the peripheral circuit will not be affected by the operation of the write driver and the GIO line precharge circuit.
摘要:
A semiconductor integrated circuit device includes a logic circuit and a synchronous dynamic random access memory including a core unit, integrated on a single semiconductor chip. The semiconductor integrated circuit device includes a synchronous dynamic random access memory control circuit which receives external control signals for the synchronous dynamic random access memory from the logic circuit, and outputs internal control signals to the core unit of the synchronous dynamic random access memory. For testing of semiconductor integrated circuit device, external test signals are provided through external terminals. The external test signals are selected by a selector and are provided to the core unit of the synchronous dynamic random access memory for testing.
摘要:
A semiconductor integrated circuit device includes a logic circuit and a synchronous dynamic random access memory including a core unit, integrated on a single semiconductor chip. The semiconductor integrated circuit device includes a synchronous dynamic random access memory control circuit which receives external control signals for the synchronous dynamic random access memory from the logic circuit, and outputs internal control signals to the core unit of the synchronous dynamic random access memory. For testing of semiconductor integrated circuit device, external test signals are provided through external terminals. The external test signals are selected by a selector, and are provided to the core unit of the synchronous dynamic random access memory for testing.
摘要:
Columns included in a sub-block are divided into first and second groups. If a defective memory cell column is present in the first group, an address comparison circuit activates a signal to select a redundant memory cell column, then selection prohibiting signal attains an "L" level based on information programmed in a programming circuit, a selection of a column in the first group is prohibited, and a redundant memory cell column selection signal is activated. Meanwhile, a normal selecting operation is performed to the second column group.
摘要:
A semiconductor integrated circuit can variably set the driving power of all or part of internal input/output terminals and internal output terminals used within a multi-chip package. It can increase the driving power at an individual wafer test before packaging to sufficiently drive a load connected between a tester and the internal input/output terminals and internal output terminals, and can reduce the driving power after packaging. It can prevent noise and power consumption from being increased.
摘要:
A test circuit includes a writing unit that outputs m-bit data captured upon receipt of a clock signal, branches the m-bit data n identical m-bit data signals, and stores the n m-bit data signals in a memory device. A function determining unit reads the n m-bit data signals from the memory, compares one of the n m-bit data signals to an m-bit expected value, and determines coincidence or non-coincidence between the n m-bit data signal and an expected value.
摘要:
A synchronized clock generating apparatus includes a delayed clock generating circuit including a plurality of serially connected delaying elements for generating delayed clock signals delayed successively relative to an incoming basic clock signal. Storage means includes a plurality of storage elements storing therein a predetermined level in response to transitions occurring in associated ones of said basic and delayed clock signals after a trigger signal which is asynchronous with the basic clock signal is applied thereto. A clock selection logic circuit is controlled by the output signal of the storage means for detecting the clock signal transition occurring closest in time to the application of the asynchronous trigger signal, and for selecting a desired one of said clock signals, based on the result of the detection, as a synchronized clock signal output.
摘要:
An information device includes a main processing circuit for executing signal processing related to a main function in the information device, a main microcomputer for controlling the main processing circuit, a receiver circuit for interfacing with the outside of the information device, and an interface microcomputer for controlling the receiver circuit, the interface microcomputer being provided separately from the main microcomputer.
摘要:
An external clock signal is transmitted as a clock signal to a memory core through a first signal transmitting path. In response to activation of the clock signal CLK, memory core starts a read operation. Read data output from memory core is latched by a latch circuit. An external signal designating a latch timing is transmitted as a latch timing signal to the latch circuit through a second signal transmitting path. A delay circuit is provided in at least one of the first and second signal transmitting paths, so that the first and second signal transmitting paths come to have the same signal delay.