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公开(公告)号：US06933235B2
公开(公告)日：2005-08-23
申请号：US10302714
申请日：2002-11-21
IPC分类号： H01L21/268 , H01L21/28 , H01L21/306 , H01L21/311 , H01L21/316 , H01L21/32 , H01L29/51 , H01L21/302
CPC分类号： H01L21/02238 , H01L21/02052 , H01L21/2686 , H01L21/28185 , H01L21/28194 , H01L21/31116 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L21/32 , H01L29/517 , H01L29/518
摘要： A method of processing a substrate is disclosed. The method includes depositing a dielectric layer having a metal oxide on a substrate. A portion of the dielectric layer is removed to form a dielectric structure, thereby exposing a surface of the substrate. For example, the dielectric layer may be patterned using standard photolithographic techniques and etching. An oxide layer is then formed on the exposed surface of the substrate. The oxide layer may be formed using ozone that is generated using ultraviolet radiation. After the oxide layer is formed, it is removed using an etching process.
摘要翻译： 公开了一种处理衬底的方法。 该方法包括在衬底上沉积具有金属氧化物的电介质层。 去除介电层的一部分以形成电介质结构，从而暴露衬底的表面。 例如，可以使用标准光刻技术和蚀刻对电介质层进行图案化。 然后在基板的暴露表面上形成氧化物层。 可以使用使用紫外线辐射产生的臭氧形成氧化物层。 在形成氧化物层之后，使用蚀刻工艺除去氧化物层。
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公开(公告)号：US06784507B2
公开(公告)日：2004-08-31
申请号：US10259677
申请日：2002-09-27
申请人： Robert M. Wallace , Bruce E. Gnade
发明人： Robert M. Wallace , Bruce E. Gnade
IPC分类号： H01L2976
CPC分类号： H01L21/28185 , H01L21/28008 , H01L21/28088 , H01L21/28114 , H01L21/28194 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/823857 , H01L29/1054 , H01L29/42376 , H01L29/4966 , H01L29/517 , H01L29/66545
摘要： CMOS and BiCMOS structures with a silicate-germanate gate dielectric on SiGe PMOS areas and Si NMOS areas plus HBTs with Si—SiGe emitter-base junctions.
摘要翻译： CMOS和BiCMOS结构，在SiGe PMOS区域上具有硅酸盐 - 锗酸盐栅极电介质，Si NMOS区域加上具有Si-SiGe发射极基极结的HBT。
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公开(公告)号：US5523878A
公开(公告)日：1996-06-04
申请号：US268485
申请日：1994-06-30
CPC分类号： B82Y30/00 , B82Y10/00 , G02B26/0841 , G02B6/122
摘要： A method of forming of a monomolecular coating (19) for surfaces of contacting elements (11, 17) of micro-mechanical devices (10), specifically, devices that have moving elements that contact other elements and that tend to stick as a result of the contact. The method uses liquid deposition, with the device being placed in a solution that contains a precursor to the formation of the coating. The precursor is chosen based on coordination chemistry between the precursor and the surface to be coated.
摘要翻译： 形成用于微机械装置（10）的接触元件（11,17）的表面的单分子涂层（19）的方法，具体地说，具有与其它元件接触并且由于 联系人。 该方法使用液体沉积，该装置被放置在包含形成涂层的前体的溶液中。 基于前体和待涂覆表面之间的配位化学选择前体。
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公开(公告)号：US5453659A
公开(公告)日：1995-09-26
申请号：US258803
申请日：1994-06-10
CPC分类号： H01J29/94 , H01J29/085 , H01J2329/00
摘要： An anode plate 40 for use in a field emission flat panel display device comprises a transparent planar substrate 42 having a plurality of electrically conductive, parallel stripes 46 comprising the anode electrode of the device, which are covered by phosphors 48.sub.R, 48.sub.G and 48.sub.B, and a gettering material 52 in the interstices of the stripes 46. The gettering material 52 is preferably selected from among zirconium-vanadium-iron and barium. The getter 52 may be thermally reactivated by passing a current through it at selected times, or by electron bombardment from microtips on the emitter substrate. The getter 52 may be formed on a substantially opaque, electrically insulating material 50 affixed to substrate 42 in the spaces formed between conductors 46, which acts as a barrier to the passage of ambient light into and out of the device. Methods of fabricating the getter stripes 52 on the anode plate 40 are disclosed.
摘要翻译： 用于场致发射平板显示装置的阳极板40包括透明平面基板42，该透明平面基板42具有由荧光体48R，48G和48B覆盖的多个导电平行条带46，其包括该装置的阳极电极，以及 吸收材料52优选地选自锆 - 铁 - 铁和钡。 吸气剂52可以通过在选定的时间通过电流或者通过在发射极衬底上的微尖端的电子轰击来热再活化。 吸气剂52可以形成在形成在导体46之间的空间中固定到基底42上的基本上不透明的电绝缘材料50上，所述空间充当环境光进入和离开装置的通道的屏障。 公开了在阳极板40上制造吸气条52的方法。
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5.发明授权Method for using field emitter arrays in chemical and biological hazard mitigation and remediation 失效在化学和生物危害减轻和补救中使用场发射器阵列的方法公开(公告)号：US07288171B2
公开(公告)日：2007-10-30
申请号：US10051970
申请日：2002-01-18
申请人： Bruce E. Gnade , Robert M. Wallace
发明人： Bruce E. Gnade , Robert M. Wallace
IPC分类号： B01J19/08
CPC分类号： A61L9/22 , A61L2/08 , A61L2/14 , A61L9/18 , B01J19/085 , B01J19/087 , B01J2219/0803 , B01J2219/0875 , B01J2219/0877 , G01N27/68 , G01N33/0011
摘要： A method is provided, the method comprising operating a field emitter array (FEA) to generate at least one of a high electric field and a high electron flux, and exposing the field emitter array (FEA) to at least one gas. The method further comprises generating at least one radical species from the at least one gas exposed to the at least one of the high electric field and the high electron flux.
摘要翻译： 提供了一种方法，所述方法包括操作场致发射阵列（FEA）以产生高电场和高电子通量中的至少一种，并将场致发射阵列（FEA）暴露于至少一种气体。 该方法还包括从暴露于高电场和高电子通量中的至少一个的至少一种气体产生至少一种自由基物质。
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公开(公告)号：US06335238B1
公开(公告)日：2002-01-01
申请号：US09073087
申请日：1998-05-05
IPC分类号： H01L218242
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L27/10873 , H01L28/55 , H01L29/513 , H01L29/517 , Y10S438/931
摘要： This invention pertains generally to the integration of dielectrics with integrated circuits, and more particularly to reaction barriers between high-k dielectrics and an underlying Group IV semiconductor layer. Applications for high permittivity memory cells and gate dielectrics are disclosed. This method has steps of providing a partially completed integrated circuit having a semiconductor layer substantially comprising silicon, where the layer has an exposed face. The method also includes forming an ultra-thin SiC reaction barrier at the exposed face, and depositing a high permittivity storage dielectric on the SiC reaction barrier. Typically, the SiC reaction barrier is less then 25 Å thick, preferably one or two monolayers of SiC.
摘要翻译： 本发明一般涉及电介质与集成电路的集成，更具体地涉及高k电介质和下伏IV族半导体层之间的反应势垒。 公开了用于高介电常数存储单元和栅极电介质的应用。 该方法具有提供具有基本上包含硅的半导体层的部分完成的集成电路的步骤，其中该层具有暴露的面。 该方法还包括在暴露面上形成超薄SiC反应势垒，并在SiC反应势垒上沉积高介电常数存储电介质。 通常，SiC反应势垒小于25埃，优选一个或两个单层的SiC。
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公开(公告)号：US5689151A
公开(公告)日：1997-11-18
申请号：US535506
申请日：1995-09-28
CPC分类号： H01J29/94 , H01J29/085 , H01J7/18 , H01J2201/30403 , H01J2329/00
摘要： An anode plate (10) for use in a field emission flat panel display device (8) comprises a transparent substrate (26) having a plurality of spaced-apart, electrically conductive regions (28) which form the anode electrode of the display device (8). The conductive regions (28) are covered by a luminescent material (24). A getter material (29) is deposited on the substrate (26) and between the conductive regions (28) of the anode plate (10). The getter material (29) is preferably an electrically nonconductive, high porosity, and low density material, such as an aerogel or xerogel. Methods of fabricating the getter material (29) on the anode plate (10) are disclosed.
摘要翻译： 一种用于场致发射平板显示装置（8）的阳极板（10）包括具有形成显示装置的阳极电极的多个间隔开的导电区域（28）的透明基板（26） 8）。 导电区域（28）被发光材料（24）覆盖。 吸气材料（29）沉积在衬底（26）上并在阳极板（10）的导电区域（28）之间。 吸气材料（29）优选是不导电，高孔隙率和低密度材料，例如气凝胶或干凝胶。 公开了在阳极板（10）上制造吸气材料（29）的方法。
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公开(公告)号：US5614785A
公开(公告)日：1997-03-25
申请号：US535863
申请日：1995-09-28
申请人： Robert M. Wallace , Bruce E. Gnade , Wiley P. Kirk
发明人： Robert M. Wallace , Bruce E. Gnade , Wiley P. Kirk
CPC分类号： H01J29/085 , H01J29/94 , H01J2329/00
摘要： An anode plate (10) for use in a field emission flat panel display device (8) includes a transparent substrate (26) having a plurality of spaced-apart, electrically conductive regions (28) are covered by a luminescent material (24) and from the anode electrode. A getter material (29) of porous silicon is deposited on the substrate (26) between the conductive regions (28) of the anode plate (10). The getter material (29) of porous silicon is preferably electrically nonconductive, opaque, and highly porous. Included are methods of fabricating the getter material (29) on the anode plate (10).
摘要翻译： 一种用于场致发射平板显示装置（8）的阳极板（10）包括具有多个间隔开的导电区域（28）的透明基板（26）被发光材料（24）覆盖，并且 从阳极电极。 在阳极板（10）的导电区域（28）之间的衬底（26）上沉积多孔硅的吸气材料（29）。 多孔硅的吸气材料（29）优选是不导电的，不透明的，并且是高度多孔的。 包括在阳极板（10）上制造吸气材料（29）的方法。
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9.发明授权Method of making a field emission device anode plate having an integrated getter 失效制造具有集成吸气剂的场致发射器件阳极板的方法
公开(公告)号：US5520563A
公开(公告)日：1996-05-28
申请号：US474429
申请日：1995-06-07
CPC分类号： H01J29/94 , H01J29/085 , H01J2329/00
摘要： An anode plate 40 for use in a field emission flat panel display device comprises a transparent planar substrate 42 having a plurality of electrically conductive, parallel stripes 46 comprising the anode electrode of the device, which are covered by phosphors 48.sub.R, 48.sub.G and 48.sub.B, and a gettering material 52 in the interstices of the stripes 46. The gettering material 52 is preferably selected from among zirconium-vanadium-iron and barium. The getter 52 may be thermally reactivated by passing a current through it at selected times, or by electron bombardment from microtips on the emitter substrate. The getter 52 may be formed on a substantially opaque, electrically insulating material 50 affixed to substrate 42 in the spaces formed between conductors 46, which acts as a barrier to the passage of ambient light into and out of the device. Methods of fabricating the getter stripes 52 on the anode plate 40 are disclosed.
摘要翻译： 用于场致发射平板显示装置的阳极板40包括透明平面基板42，该透明平面基板42具有由荧光体48R，48G和48B覆盖的多个导电平行条带46，其包括该装置的阳极电极，以及 吸收材料52优选地选自锆 - 铁 - 铁和钡。 吸气剂52可以通过在选定的时间通过电流或者通过在发射极衬底上的微尖端的电子轰击来热再活化。 吸气剂52可以形成在形成在导体46之间的空间中固定到基底42上的基本上不透明的电绝缘材料50上，所述空间充当环境光进入和离开装置的通道的屏障。 公开了在阳极板40上制造吸气条52的方法。
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公开(公告)号：US5316793A
公开(公告)日：1994-05-31
申请号：US919685
申请日：1992-07-27
申请人： Robert M. Wallace , Bruce E. Gnade
发明人： Robert M. Wallace , Bruce E. Gnade
IPC分类号： B01J19/00 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45517 , C30B25/14
摘要： A system and method for epitaxial growth of high purity materials on an atomic or molecular layer by layer basis wherein a substrate is placed in an evacuated chamber which is evacuated to a pressure of less than about 10.sup.-9 Torr and predetermined amounts of predetermined precursor gases are injected into the chamber from a location in the chamber closely adjacent the substrate to form the atomic or molecular layer at the surface of the substrate while maintaining the pressure at less than about 10.sup.-9 Torr in the chamber in regions thereof distant from the substrate. The precursor gases are provided from a plurality of tanks containing the precursor gases therein under predetermined pressure and predetermined ones of the tanks are opened to the chamber for predetermined time periods while maintaining the pressure in the tanks. A dose limiting structure is provided for directing predetermined amounts of the precursor gases principally at the substrate with a dose limiting directional structure.
摘要翻译： 一种用于以原子或分子层为基础外延生长高纯度材料的系统和方法，其中将衬底放置在抽真空至小于约10-9乇的压力的预抽真空室中，并将预定量的预定前体气体 从与基板紧邻的室中的位置注入室中，以在基板的表面处形成原子层或分子层，同时在远离基板的区域中将室内的压力维持在小于约10-9乇 。 前体气体由预定压力下容纳其中的前体气体的多个容器提供，并且预定的这些罐在腔室中保持预定的时间段同时保持在罐中的压力。 提供了剂量限制结构，用于以剂量限制的方向结构主要在衬底上引导预定量的前体气体。
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