公开(公告)号：US20130270512A1

公开(公告)日：2013-10-17

申请号：US13976411

申请日：2011-12-19

申请人： Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Niloy Mukherjee ,  Jack Kavalieros ,  Willy Rachmady ,  Van Le ,  Benjamin Chu-Kung ,  Matthew Metz ,  Robert Chau

发明人： Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Niloy Mukherjee ,  Jack Kavalieros ,  Willy Rachmady ,  Van Le ,  Benjamin Chu-Kung ,  Matthew Metz ,  Robert Chau

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/845 ,  B82Y10/00 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

摘要： Architectures and techniques for co-integration of heterogeneous materials, such as group III-V semiconductor materials and group IV semiconductors (e.g., Ge) on a same substrate (e.g. silicon). In embodiments, multi-layer heterogeneous semiconductor material stacks having alternating nanowire and sacrificial layers are employed to release nanowires and permit formation of a coaxial gate structure that completely surrounds a channel region of the nanowire transistor. In embodiments, individual PMOS and NMOS channel semiconductor materials are co-integrated with a starting substrate having a blanket layers of alternating Ge/III-V layers. In embodiments, vertical integration of a plurality of stacked nanowires within an individual PMOS and individual NMOS device enable significant drive current for a given layout area.

公开(公告)号：US09123567B2

公开(公告)日：2015-09-01

申请号：US13976411

申请日：2011-12-19

申请人： Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Niloy Mukherjee ,  Jack Kavalieros ,  Willy Rachmady ,  Van Le ,  Benjamin Chu-Kung ,  Matthew Metz ,  Robert Chau

发明人： Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Niloy Mukherjee ,  Jack Kavalieros ,  Willy Rachmady ,  Van Le ,  Benjamin Chu-Kung ,  Matthew Metz ,  Robert Chau

IPC分类号： H01L27/092 ,  H01L29/66 ,  H01L29/775 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/423 ,  H01L29/786 ,  H01L27/12 ,  B82Y10/00 ,  H01L29/78

CPC分类号： H01L21/845 ,  B82Y10/00 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

摘要： Architectures and techniques for co-integration of heterogeneous materials, such as group III-V semiconductor materials and group IV semiconductors (e.g., Ge) on a same substrate (e.g. silicon). In embodiments, multi-layer heterogeneous semiconductor material stacks having alternating nanowire and sacrificial layers are employed to release nanowires and permit formation of a coaxial gate structure that completely surrounds a channel region of the nanowire transistor. In embodiments, individual PMOS and NMOS channel semiconductor materials are co-integrated with a starting substrate having a blanket layers of alternating Ge/III-V layers. In embodiments, vertical integration of a plurality of stacked nanowires within an individual PMOS and individual NMOS device enable significant drive current for a given layout area.

摘要翻译： 在同一衬底（例如硅）上的非均质材料如III-V族半导体材料和IV族半导体（例如Ge）共同整合的体系结构和技术。 在实施例中，采用具有交替的纳米线和牺牲层的多层非均相半导体材料堆叠以释放纳米线并允许形成完全包围纳米线晶体管的沟道区域的同轴栅极结构。 在实施例中，各个PMOS和NMOS沟道半导体材料与具有交替的Ge / III-V层的覆盖层的起始衬底共同整合。 在实施例中，单个PMOS和单独NMOS器件内的多个堆叠的纳米线的垂直积分能够为给定的布局区域提供显着的驱动电流。

公开(公告)号：US20140175378A1

公开(公告)日：2014-06-26

申请号：US13722746

申请日：2012-12-20

申请人： Niti Goel ,  Niloy Mukherjee ,  Seung Hoon Sung ,  Van Le ,  Matthew Metz ,  Jack Kavalieros ,  RAVI PILLARISETTY ,  Sanaz Gardner ,  SANSAPTAK DASGUPTA ,  Willy Rachmady ,  BENJAMIN CHU-KUNG ,  MARKO RADOSAVLJEVIC ,  Gilbert Dewey ,  Marc French ,  JESSICA KACHIAN ,  SATYARTH SURI ,  Robert Chau

发明人： Niti Goel ,  Niloy Mukherjee ,  Seung Hoon Sung ,  Van Le ,  Matthew Metz ,  Jack Kavalieros ,  RAVI PILLARISETTY ,  Sanaz Gardner ,  SANSAPTAK DASGUPTA ,  Willy Rachmady ,  BENJAMIN CHU-KUNG ,  MARKO RADOSAVLJEVIC ,  Gilbert Dewey ,  Marc French ,  JESSICA KACHIAN ,  SATYARTH SURI ,  Robert Chau

IPC分类号： H01L21/20 ,  H01L21/764

CPC分类号： H01L21/764 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/76232

摘要： An embodiment includes depositing a material onto a substrate where the material includes a different lattice constant than the substrate (e.g., III-V or IV epitaxial (EPI) material on a Si substrate). An embodiment includes an EPI layer formed within a trench having walls that narrow as the trench extends upwards. An embodiment includes an EPI layer formed within a trench using multiple growth temperatures. A defect barrier, formed in the EPI layer when the temperature changes, contains defects within the trench and below the defect barrier. The EPI layer above the defect barrier and within the trench is relatively defect free. An embodiment includes an EPI layer annealed within a trench to induce defect annihilation. An embodiment includes an EPI superlattice formed within a trench and covered with a relatively defect free EPI layer (that is still included in the trench). Other embodiments are described herein.

摘要翻译： 实施例包括将材料沉积到衬底上，其中材料包括与衬底（例如Si衬底上的III-V或IV外延（EPI）材料）不同的晶格常数。 一个实施例包括形成在沟槽内的EPI层，其具有随着沟槽向上延伸而变窄的壁。 实施例包括使用多个生长温度在沟槽内形成的EPI层。 当温度变化时，在EPI层中形成的缺陷屏障在沟槽内和缺陷屏障之下包含缺陷。 缺陷屏障之上和沟槽内的EPI层相对无缺陷。 一个实施方案包括在沟槽内退火以引发缺陷湮灭的EPI层。 一个实施例包括形成在沟槽内并覆盖有相对无缺陷的EPI层（仍包含在沟槽中）的EPI超晶格。 本文描述了其它实施例。

公开(公告)号：US20130277683A1

公开(公告)日：2013-10-24

申请号：US13976837

申请日：2011-12-19

申请人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

发明人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/7787 ,  G06F1/1633 ,  G06F1/189 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7789 ,  H01L29/785 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/451

摘要： Transistors for high voltage and high frequency operation. A non-planar, polar crystalline semiconductor body having a top surface disposed between first and second opposite sidewalls includes a channel region with a first crystalline semiconductor layer disposed over the first and second sidewalls. The first crystalline semiconductor layer is to provide a two dimensional electron gas (2DEG) within the channel region. A gate structure is disposed over the first crystalline semiconductor layer along at least the second sidewall to modulate the 2DEG. First and second sidewalls of the non-planar polar crystalline semiconductor body may have differing polarity, with the channel proximate to a first of the sidewalls. The gate structure may be along a second of the sidewalls to gate a back barrier. The polar crystalline semiconductor body may be a group III-nitride formed on a silicon substrate with the (10 10) plane on a (110) plane of the silicon.

摘要翻译： 用于高压和高频工作的晶体管。 具有设置在第一和第二相对侧壁之间的顶表面的非平面极性结晶半导体本体包括具有设置在第一和第二侧壁上的第一晶体半导体层的沟道区。 第一晶体半导体层是在沟道区内提供二维电子气（2DEG）。 栅极结构沿至少第二侧壁设置在第一晶体半导体层上方，以调制2DEG。 非平面极性结晶半导体主体的第一和第二侧壁可具有不同的极性，其中通道靠近第一侧壁。 栅极结构可以沿着侧壁中的第二侧面以栅极背栅。 极性结晶半导体体可以是在硅衬底上形成的III族氮化物，其中（10 10）面在硅的（110）平面上。

公开(公告)号：US09245989B2

公开(公告)日：2016-01-26

申请号：US13976414

申请日：2011-12-19

申请人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

发明人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

IPC分类号： H01L29/775 ,  H01L29/66 ,  G05F3/02 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/20

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  G05F3/02 ,  H01L21/02603 ,  H01L21/02636 ,  H01L21/225 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/31 ,  H01L21/31116 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/04 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78696

摘要： Transistors suitable for high voltage and high frequency operation. A nanowire is disposed vertically or horizontally on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first semiconductor material, a source region electrically coupled with a first end of the channel region, a drain region electrically coupled with a second end of the channel region, and an extrinsic drain region disposed between the channel region and drain region. The extrinsic drain region has a wider bandgap than that of the first semiconductor. A gate stack including a gate conductor and a gate insulator coaxially wraps completely around the channel region, and drain and source contacts similarly coaxially wrap completely around the drain and source regions.

摘要翻译： 晶体管适用于高电压和高频工作。 纳米线垂直或水平地布置在基底上。 纳米线的纵向长度被限定为第一半导体材料的沟道区域，与沟道区域的第一端电耦合的源极区域，与沟道区域的第二端电耦合的漏极区域和外部漏极 区域设置在沟道区域和漏极区域之间。 外在漏极区具有比第一半导体更宽的带隙。 包括栅极导体和栅极绝缘体的栅极堆叠器完全同轴地包裹在沟道区域周围，并且漏极和源极触点类似地同轴地围绕漏极和源极区域包裹。

公开(公告)号：US09461160B2

公开(公告)日：2016-10-04

申请号：US13976837

申请日：2011-12-19

申请人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

发明人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/78 ,  H01L29/20

CPC分类号： H01L29/7787 ,  G06F1/1633 ,  G06F1/189 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7789 ,  H01L29/785 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/451

摘要： Transistors for high voltage and high frequency operation. A non-planar, polar crystalline semiconductor body having a top surface disposed between first and second opposite sidewalls includes a channel region with a first crystalline semiconductor layer disposed over the first and second sidewalls. The first crystalline semiconductor layer is to provide a two dimensional electron gas (2DEG) within the channel region. A gate structure is disposed over the first crystalline semiconductor layer along at least the second sidewall to modulate the 2DEG. First and second sidewalls of the non-planar polar crystalline semiconductor body may have differing polarity, with the channel proximate to a first of the sidewalls. The gate structure may be along a second of the sidewalls to gate a back barrier. The polar crystalline semiconductor body may be a group III-nitride formed on a silicon substrate with the (1010) plane on a (110) plane of the silicon.

摘要翻译： 用于高压和高频工作的晶体管。 具有设置在第一和第二相对侧壁之间的顶表面的非平面极性晶体半导体本体包括具有设置在第一和第二侧壁上的第一晶体半导体层的沟道区域。 第一晶体半导体层是在沟道区内提供二维电子气（2DEG）。 栅极结构沿至少第二侧壁设置在第一晶体半导体层上方，以调制2DEG。 非平面极性结晶半导体主体的第一和第二侧壁可具有不同的极性，其中通道靠近第一侧壁。 栅极结构可以沿着侧壁中的第二侧面以栅极背栅。 极性结晶半导体体可以是在硅衬底上形成的III族氮化物，其中（1010）面在硅的（110）平面上。

公开(公告)号：US09240410B2

公开(公告)日：2016-01-19

申请号：US13976413

申请日：2011-12-19

申请人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

发明人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

IPC分类号： H01L27/088 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778 ,  H01L29/786 ,  H01L29/78 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/20

CPC分类号： H01L29/158 ,  B82Y10/00 ,  H01L21/02603 ,  H01L23/66 ,  H01L27/0605 ,  H01L27/0886 ,  H01L29/045 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42392 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/785 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/78696 ,  H01L2223/6677 ,  Y10S977/938

摘要： A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a source region electrically coupled with a first end of the channel region, and a drain region electrically coupled with a second end of the channel region. A second group III-N material on the first group III-N material serves as a charge inducing layer, and/or barrier layer on surfaces of nanowire. A gate insulator and/or gate conductor coaxially wraps completely around the nanowire within the channel region. Drain and source contacts may similarly coaxially wrap completely around the drain and source regions.

公开(公告)号：US20130279145A1

公开(公告)日：2013-10-24

申请号：US13976413

申请日：2011-12-19

申请人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

发明人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/158 ,  B82Y10/00 ,  H01L21/02603 ,  H01L23/66 ,  H01L27/0605 ,  H01L27/0886 ,  H01L29/045 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42392 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/785 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/78696 ,  H01L2223/6677 ,  Y10S977/938

摘要： A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a source region electrically coupled with a first end of the channel region, and a drain region electrically coupled with a second end of the channel region. A second group III-N material on the first group III-N material serves as a charge inducing layer, and/or barrier layer on surfaces of nanowire. A gate insulator and/or gate conductor coaxially wraps completely around the nanowire within the channel region. Drain and source contacts may similarly coaxially wrap completely around the drain and source regions.

摘要翻译： III-N族纳米线设置在基板上。 纳米线的纵向长度被限定为第一组III-N材料的沟道区域，与沟道区域的第一端电耦合的源极区域和与沟道区域的第二端电耦合的漏极区域。 第一组III-N材料上的第二组III-N材料用作纳米线表面上的电荷诱导层和/或阻挡层。 栅极绝缘体和/或栅极导体在通道区域内的纳米线周围同轴地包裹。 排水和源极接触件可以类似地同轴地围绕漏极和源极区域包裹。

公开(公告)号：US20130307513A1

公开(公告)日：2013-11-21

申请号：US13976414

申请日：2011-12-19

申请人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

发明人： Han Wui Then ,  Robert Chau ,  Benjamin Chu-Kung ,  Gilbert Dewey ,  Jack Kavalieros ,  Matthew Metz ,  Niloy Mukherjee ,  Ravi Pillarisetty ,  Marko Radosavljevic

IPC分类号： H01L29/775 ,  G05F3/02 ,  H01L29/66

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  G05F3/02 ,  H01L21/02603 ,  H01L21/02636 ,  H01L21/225 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/31 ,  H01L21/31116 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/04 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78696

摘要： Transistors suitable for high voltage and high frequency operation. A nanowire is disposed vertically or horizontally on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first semiconductor material, a source region electrically coupled with a first end of the channel region, a drain region electrically coupled with a second end of the channel region, and an extrinsic drain region disposed between the channel region and drain region. The extrinsic drain region has a wider bandgap than that of the first semiconductor. A gate stack including a gate conductor and a gate insulator coaxially wraps completely around the channel region, drain and source contacts similarly coaxially wrap completely around the drain and source regions.

摘要翻译： 晶体管适用于高电压和高频工作。 纳米线垂直或水平地布置在基底上。 纳米线的纵向长度被限定为第一半导体材料的沟道区域，与沟道区域的第一端电耦合的源极区域，与沟道区域的第二端电耦合的漏极区域和外部漏极 区域设置在沟道区域和漏极区域之间。 外在漏极区具有比第一半导体更宽的带隙。 包括栅极导体和栅极绝缘体的栅极堆叠器完全同轴地包裹在沟道区域周围，漏极和源极触点类似地同轴地围绕漏极和源极区域包裹。

公开(公告)号：US20130271208A1

公开(公告)日：2013-10-17

申请号：US13977195

申请日：2011-12-19

申请人： Han Wui Then ,  Robert Chau ,  Valluri Rao ,  Niloy Mukherjee ,  Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Jack Kavalieros

发明人： Han Wui Then ,  Robert Chau ,  Valluri Rao ,  Niloy Mukherjee ,  Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Jack Kavalieros

IPC分类号： H01L25/07 ,  H01L25/00

CPC分类号： H01L25/072 ,  H01L21/8252 ,  H01L21/8258 ,  H01L25/50 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

摘要： System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) that is capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits. In embodiments, the III-N transistor architecture is amenable to scaling to sustain a trajectory of performance improvements over many successive device generations. In embodiments, the III-N transistor architecture is amenable to monolithic integration with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. Planar and non-planar HEMT embodiments having one or more of recessed gates, symmetrical source and drain, regrown source/drains are formed with a replacement gate technique permitting enhancement mode operation and good gate passivation.

摘要翻译： 片上系统（SoC）解决方案使用基于能够实现高Ft和足够高击穿电压（BV）的III类氮化物（III-N）的晶体管技术将RFIC与PMIC集成，以实现高电压和/ 或高功率电路。 在实施例中，III-N晶体管架构适于缩放以维持许多连续器件世代的性能改进的轨迹。 在实施例中，III-N晶体管架构适于与IV类晶体管架构（诸如平面和非平面硅CMOS晶体管技术）的单片集成。 具有凹入栅极，对称源极和漏极，再生长源极/漏极中的一个或多个的平面和非平面HEMT实施例使用允许增强模式操作和良好栅极钝化的替代栅极技术形成。