公开(公告)号：US20060113683A1

公开(公告)日：2006-06-01

申请号：US11147958

申请日：2005-06-08

申请人： Nancy Dean ,  James Flint ,  John Lalena ,  Martin Weiser

发明人： Nancy Dean ,  James Flint ,  John Lalena ,  Martin Weiser

IPC分类号： H01L23/48 ,  C22C13/00 ,  C22C5/08

CPC分类号： C22C11/06 ,  C22C11/00 ,  C22C12/00 ,  C22C13/00 ,  C22C19/03 ,  H01L24/29 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00

摘要： Lead free solder compositions are described herein that include at least one solder material; at least one dopant material, wherein the dopant is present in the material in an amount of less than about 1000 ppm, and wherein the solder composition is substantially lead free. Several doped solder compositions described herein comprise at least one solder material, at least one phosphorus-based dopant and at least one copper-based dopant. Methods of forming doped solder materials include: a) providing at least one solder material; b) providing at least one phosphorus-based dopant; c) providing at least one copper-based dopant, and d) blending the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant to form a doped solder material. Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder composition comprising at least one solder material; at least one dopant material, wherein the dopant is present in the material in an amount of less than about 1000 ppm, and wherein the solder composition is substantially lead free. Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder composition comprising at least one phosphorus-based dopant and at least one copper-based dopant, such as those described herein, and d) a semiconductor die or package. Electronic and semiconductor components that comprise solder compositions and/or layered materials described herein are also contemplated.

摘要翻译： 本文描述了无铅焊料组合物，其包括至少一种焊料材料; 至少一种掺杂剂材料，其中所述掺杂剂以小于约1000ppm的量存在于所述材料中，并且其中所述焊料组合物基本上无铅。 本文所述的多种掺杂焊料组合物包括至少一种焊料材料，至少一种磷基掺杂剂和至少一种铜基掺杂剂。 形成掺杂焊料的方法包括：a）提供至少一种焊料; b）提供至少一种磷基掺杂剂; c）提供至少一种铜基掺杂剂，以及d）将所述至少一种焊料材料，所述至少一种磷基掺杂剂和所述至少一种铜基掺杂剂共混以形成掺杂的焊料材料。 本文还描述了分层材料，其包括：a）表面或基底; b）电互连; c）包含至少一种焊料材料的焊料组合物; 至少一种掺杂剂材料，其中所述掺杂剂以小于约1000ppm的量存在于所述材料中，并且其中所述焊料组合物基本上无铅。 本文还描述了分层材料，其包括：a）表面或基底; b）电互连; c）包含至少一种磷基掺杂剂和至少一种铜基掺杂剂的焊料组合物，例如本文所述的那些，以及d）半导体管芯或封装。 包括本文所述的焊料组合物和/或层状材料的电子和半导体组件也被考虑。

公开(公告)号：US20070013054A1

公开(公告)日：2007-01-18

申请号：US11180459

申请日：2005-07-12

申请人： Brian Ruchert ,  Martin Weiser ,  Mark Fery ,  Nancy Dean ,  John Lalena

发明人： Brian Ruchert ,  Martin Weiser ,  Mark Fery ,  Nancy Dean ,  John Lalena

IPC分类号： H01L23/34

CPC分类号： H01L23/3675 ,  H01L23/3736 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/3011 ,  H01L2924/00

摘要： A thermally conductive material that includes an alloy which includes indium, zinc, magnesium or a combination thereof is described herein. Also, a semiconductor package comprising a thermal interface material which includes solder and particles dispersed throughout the solder, the particles being of thermal conductivity greater than or equal to about 80 W/m-K is described herein. In one described embodiment, a semiconductor package includes a thermal interface material which includes at least one lanthanide element. In yet another embodiment disclosed herein, a solder preform construction includes a solder and a structure within the solder, the solder being of a first composition and the structure being of a second composition which has a lower melting point than the first composition. In another embodiment disclosed herein, an assembly comprising: a heat spreader; and a solder preform construction bonded to the heat spreader, the solder preform construction including a solder of a first composition, and a region within the solder of a second composition which has a lower melting point than the first composition. Methods of forming layered thermal interface materials and thermal transfer materials include: a) providing a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material; b) providing at least one solder material, wherein the solder material is directly deposited onto the bottom surface of the heat spreader component; and c) depositing the at least one solder material onto the bottom surface of the heat spreader component.

摘要翻译： 本文描述了包括包含铟，锌，镁或其组合的合金的导热材料。 此外，本文描述了包括热界面材料的半导体封装，其包括分布在整个焊料中的焊料和颗粒，该导热系数大于或等于约80W / m-K的颗粒。 在一个所描述的实施例中，半导体封装包括包含至少一种镧系元素的热界面材料。 在本文公开的另一个实施例中，焊料预制件构造包括焊料和焊料内的结构，焊料是第一组成，并且该结构是具有比第一组合物更低的熔点的第二组成。 在本文公开的另一实施例中，一种组件包括：散热器; 以及焊料预制件结构，其结合到所述散热器，所述焊料预制件构造包括第一组合物的焊料，以及第二组合物的焊料内的区域，其具有比所述第一组成物更低的熔点。 形成层状热界面材料和热转印材料的方法包括：a）提供散热器部件，其中散热器部件包括顶表面，底表面和至少一个散热器材料; b）提供至少一种焊料材料，其中焊料材料直接沉积到散热器部件的底表面上; 以及c）将所述至少一种焊料材料沉积到所述散热器部件的底表面上。

公开(公告)号：US20050040369A1

公开(公告)日：2005-02-24

申请号：US10502480

申请日：2002-04-23

申请人： John Lalena ,  Nancy Dean ,  Martin Weiser

发明人： John Lalena ,  Nancy Dean ,  Martin Weiser

IPC分类号： B23K35/26 ,  C22C28/00 ,  C22C38/28 ,  H01B1/00 ,  H01L23/36 ,  H01L23/373

CPC分类号： C22C28/00 ,  C22C38/28 ,  H01L23/3736 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/16152 ,  H01L2924/00

摘要： The invention includes a semiconductor package which comprises a semiconductor substrate and a heat spreader. A thermal interface material thermally connects the substrate to the heat spreader. The thermal interface material consists essentially of In, Zn, and one or more elements selected from the group consisting of Mg, Ca, Nb, Ta, B, Al, Ce, Ti and Zr. The invention also includes a composition consisting essentially of In and Zn. The Zn concentration within the composition is from about 0.5 weight % to about 3 weight %. The invention also includes a composition consisting essentially of In, Zn and one or more of Mg, Ca, Nb, Ta, B, Al, Ce, Ti and Zr.

摘要翻译： 本发明包括半导体封装，其包括半导体衬底和散热器。 热界面材料将基板热连接到散热器。 热界面材料基本上由In，Zn和一种或多种选自Mg，Ca，Nb，Ta，B，Al，Ce，Ti和Zr的元素组成。 本发明还包括基本上由In和Zn组成的组合物。 组合物中的Zn浓度为约0.5重量％至约3重量％。 本发明还包括基本上由In，Zn和Mg，Ca，Nb，Ta，B，Al，Ce，Ti和Zr中的一种或多种组成的组合物。

公开(公告)号：US20070045838A1

公开(公告)日：2007-03-01

申请号：US11592396

申请日：2006-11-02

申请人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

发明人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

IPC分类号： H01L23/48

CPC分类号： H01L24/10 ,  B23K35/025 ,  B23K35/26 ,  B23K35/268 ,  C22B13/06 ,  C25C1/18 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/13 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3463 ,  H05K3/3484 ,  H01L2924/00 ,  H01L2224/05599

摘要： The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.

摘要翻译： 本发明包括具有低浓度α粒子发射体的焊料材料，并且包括纯化材料以降低材料内的α粒子发射体浓度的方法。 本发明包括通过纯化材料来减少各种含铅和无铅材料中的α粒子通量的方法。 本发明还包括在纯化材料期间估计低浓度的一种或多种α粒子发射体的分馏的方法。

公开(公告)号：US20060201279A1

公开(公告)日：2006-09-14

申请号：US11418668

申请日：2006-05-05

申请人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

发明人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

IPC分类号： C22B13/06

CPC分类号： H01L24/10 ,  B23K35/025 ,  B23K35/26 ,  B23K35/268 ,  C22B13/06 ,  C25C1/18 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/13 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3463 ,  H05K3/3484 ,  H01L2924/00 ,  H01L2224/05599

摘要： The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.

公开(公告)号：US20070045842A1

公开(公告)日：2007-03-01

申请号：US11592347

申请日：2006-11-02

申请人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

发明人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

IPC分类号： H01L23/48

CPC分类号： H01L24/10 ,  B23K35/025 ,  B23K35/26 ,  B23K35/268 ,  C22B13/06 ,  C25C1/18 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/13 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3463 ,  H05K3/3484 ,  H01L2924/00 ,  H01L2224/05599

摘要： The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.

摘要翻译： 本发明包括具有低浓度α粒子发射体的焊料材料，并且包括纯化材料以降低材料内的α粒子发射体浓度的方法。 本发明包括通过纯化材料来减少各种含铅和无铅材料中的α粒子通量的方法。 本发明还包括在纯化材料期间估计低浓度的一种或多种α粒子发射体的分馏的方法。

公开(公告)号：US20070045839A1

公开(公告)日：2007-03-01

申请号：US11592446

申请日：2006-11-02

申请人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

发明人： Martin Weiser ,  Nancy Dean ,  Brett Clark ,  Michael Bossio ,  Ronald Fleming ,  James Flint

IPC分类号： H01L23/48

CPC分类号： H01L24/10 ,  B23K35/025 ,  B23K35/26 ,  B23K35/268 ,  C22B13/06 ,  C25C1/18 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/13 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3463 ,  H05K3/3484 ,  H01L2924/00 ,  H01L2224/05599

摘要： The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.

摘要翻译： 本发明包括具有低浓度α粒子发射体的焊料材料，并且包括纯化材料以降低材料内的α粒子发射体浓度的方法。 本发明包括通过纯化材料来减少各种含铅和无铅材料中的α粒子通量的方法。 本发明还包括在纯化材料期间估计低浓度的一种或多种α粒子发射体的分馏的方法。

公开(公告)号：US20050000821A1

公开(公告)日：2005-01-06

申请号：US10495682

申请日：2001-11-16

申请人： Tamara White ,  Nancy Dean ,  Martin Weiser ,  Michael Pinter

发明人： Tamara White ,  Nancy Dean ,  Martin Weiser ,  Michael Pinter

IPC分类号： C25D1/04 ,  C25D5/12 ,  C25D7/12 ,  C25D17/10 ,  H01L21/288 ,  H01L21/60

CPC分类号： H01L24/12 ,  C25D7/123 ,  C25D17/10 ,  H01L21/2885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention includes anodes for electroplating, baths. The anodes have a purity of at least 99.9%, and comprise one or more of silver, gold, nickel, chromium, copper or various solder compositions. The anodes can, for example, comprise at least 99.995% copper/phosphorus alloy, by weight; or at least 99.995% nickel and sulfur, by weight. The invention also includes methods of electroplating, materials over semiconductor substrates.

摘要翻译： 本发明包括用于电镀，浴槽的阳极。 阳极具有至少99.9％的纯度，并且包含银，金，镍，铬，铜或各种焊料组合物中的一种或多种。 阳极可以例如包含按重量计至少99.995％的铜/磷合金; 或至少99.995％的镍和硫。 本发明还包括电镀方法，半导体衬底上的材料。

公开(公告)号：US20070138442A1

公开(公告)日：2007-06-21

申请号：US11641367

申请日：2006-12-18

申请人： Martin Weiser

发明人： Martin Weiser

IPC分类号： H01B1/12

CPC分类号： C22C12/00 ,  H01B1/02 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/83439 ,  H01L2224/83805 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01083 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： Solder compositions are described that include at least about 2% of silver, at least about 60% of bismuth, and at least one coupling element, wherein the at least one coupling element forms a complex with bismuth. Layered materials are also described that include a surface or substrate; an electrical interconnect; the solder composition described herein; and a semiconductor die or package. Methods of producing a solder composition are also described that include: a) providing at least about 2% of silver, b) providing at least about 60% of bismuth, c) providing at least one coupling element, wherein the at least one coupling element forms a complex with bismuth, and d) blending the silver, bismuth and at least one coupling element to form the solder composition.

摘要翻译： 描述了包含至少约2％的银，至少约60％的铋和至少一种偶联元素的焊料组合物，其中所述至少一种偶联元素与铋形成络合物。 还描述了包括表面或基底的分层材料; 电互连; 本文所述的焊料组合物; 和半导体管芯或封装。 还描述了生产焊料组合物的方法，其包括：a）提供至少约2％的银，b）提供至少约60％的铋，c）提供至少一个耦合元件，其中所述至少一个耦合元件 与铋形成络合物，和d）将银，铋和至少一种偶合元素混合以形成焊料组合物。

公开(公告)号：US07118449B1

公开(公告)日：2006-10-10

申请号：US10943952

申请日：2004-09-20

申请人： Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

发明人： Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

IPC分类号： B24B49/00 ,  B24B51/00 ,  B24B1/00

CPC分类号： B24B13/06 ,  B24B51/00

摘要： A method of manufacturing an optical element having an optical surface extending close to a periphery of a substrate comprises: providing a substrate having a main surface extending beyond a periphery of the optical surface and also performing a polishing of the optical surface in regions of the main surface extending beyond the optical surface. Thereafter, material of the substrate carrying a portion of the surface extending beyond the optical surface is removed.

摘要翻译： 一种制造具有靠近基板周边延伸的光学表面的光学元件的方法包括：提供具有延伸超过光学表面的周边的主表面的基板，并且还在主体的区域中执行光学表面的抛光 表面延伸超出光学表面。 此后，去除承载延伸超过光学表面的表面的一部分的基板的材料。