公开(公告)号：US06723165B2

公开(公告)日：2004-04-20

申请号：US10118924

申请日：2002-04-10

申请人： Masahiro Ogawa ,  Masahiro Ishida ,  Satoshi Tamura ,  Shinichi Takigawa

发明人： Masahiro Ogawa ,  Masahiro Ishida ,  Satoshi Tamura ,  Shinichi Takigawa

IPC分类号： C30B2502

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02664 ,  H01S5/0217 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： A method for fabricating a Group III nitride semiconductor substrate according to the present invention includes the steps of: (a) preparing a substrate; (b) forming, on the substrate, a first semiconductor layer composed of a Group III nitride semiconductor; (c) forming, on the first semiconductor layer, a heat diffusion suppressing layer lower in thermal conductivity than the first semiconductor layer; (d) forming, on the heat diffusion suppressing layer, a second semiconductor layer composed of a Group III nitride semiconductor; and (e) irradiating the first semiconductor layer through the substrate with a light beam transmitted by the substrate and absorbed by the first semiconductor layer to decompose the first semiconductor layer.

摘要翻译： 根据本发明的制造III族氮化物半导体衬底的方法包括以下步骤：（a）制备衬底; （b）在所述基板上形成由III族氮化物半导体构成的第一半导体层; （c）在第一半导体层上形成热导率比第一半导体层低的热扩散抑制层; （d）在所述热扩散抑制层上形成由III族氮化物半导体构成的第二半导体层; 和（e）用基板透射的光束照射第一半导体层，并被第一半导体层吸收以分解第一半导体层。

公开(公告)号：US06649494B2

公开(公告)日：2003-11-18

申请号：US10054844

申请日：2002-01-25

申请人： Satoshi Tamura ,  Masahiro Ogawa ,  Masahiro Ishida ,  Masaaki Yuri

发明人： Satoshi Tamura ,  Masahiro Ogawa ,  Masahiro Ishida ,  Masaaki Yuri

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079 ,  Y10S117/915

摘要： A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and the compound semiconductor film are separated from each other by irradiation of laser light, polishing of the substrate, etching, cutting, etc. Consequently, the resulting compound semiconductor film is used as a free-standing wafer.

公开(公告)号：US06589857B2

公开(公告)日：2003-07-08

申请号：US10100118

申请日：2002-03-19

申请人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

发明人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

IPC分类号： H01L2120

CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

摘要： A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the substrate and the first semiconductor film by irradiating laser light to the first semiconductor film from the back surface of the substrate. After a second semiconductor film made of a nitride semiconductor is grown through epitaxial growth while the first semiconductor film is placed on the substrate, the temperature of the substrate is lowered to room temperature. Then, by separating and removing the substrate from the first and second semiconductor films, it is possible to obtain a nitride semiconductor substrate having an area substantially as large as the area of the substrate.

公开(公告)号：US06566231B2

公开(公告)日：2003-05-20

申请号：US09790908

申请日：2001-02-23

申请人： Masahiro Ogawa ,  Kenji Orita ,  Masahiro Ishida ,  Shinji Nakamura ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Masahiro Ogawa ,  Kenji Orita ,  Masahiro Ishida ,  Shinji Nakamura ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01L2176

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02642 ,  H01L21/02647

摘要： A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.

摘要翻译： 第一半导体层在半导体衬底上外延生长并图案化以形成凹凸部分。 使用覆盖凸部的顶面的顶部外延掩模，在第一半导体层上形成第二半导体层。 从第一半导体层传播的晶格缺陷D仅存在于位于凹部的中心以上的区域（缺陷区域Ra），而在另一区域（低缺陷区域Rb）中，从第一半导体层传播的缺陷D 几乎不存在

公开(公告)号：US07345311B2

公开(公告)日：2008-03-18

申请号：US11092804

申请日：2005-03-30

申请人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

IPC分类号： H01L27/15

CPC分类号： H01L21/02389 ,  G03F7/091 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/32341

摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

摘要翻译： 半导体衬底包括以III族氮化物为主要成分的半导体层。 在半导体层的另一平面或内部设置用于散射入射在半导体层的一个平面上的入射光束的散射部分。

公开(公告)号：US06905898B2

公开(公告)日：2005-06-14

申请号：US10413995

申请日：2003-04-16

申请人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

IPC分类号： H01L21/027 ,  G03F7/09 ,  H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L21/00

CPC分类号： H01L21/02389 ,  G03F7/091 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/32341

摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

摘要翻译： 半导体衬底包括以III族氮化物为主要成分的半导体层。 在半导体层的另一平面或内部设置用于散射入射在半导体层的一个平面上的入射光束的散射部分。

公开(公告)号：US06750158B2

公开(公告)日：2004-06-15

申请号：US10145144

申请日：2002-05-15

申请人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida ,  Masaaki Yuri ,  Hirokazu Shimizu

发明人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida ,  Masaaki Yuri ,  Hirokazu Shimizu

IPC分类号： H01L2126

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  Y10S438/977

摘要： A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.

摘要翻译： 在母基板上形成第一半导体层，用与第一半导体层相反的面的照射光照射母基板，通过在第一半导体层和第一半导体层之间热分解第一半导体层而形成的热分解层 母基板。 然后，在形成热分解层的第一半导体层上形成包括有源层的第二半导体层。

公开(公告)号：US06562644B2

公开(公告)日：2003-05-13

申请号：US09921885

申请日：2001-08-06

申请人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

IPC分类号： H01L2100

CPC分类号： H01L21/02389 ,  G03F7/091 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/32341

摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

公开(公告)号：US20050167692A1

公开(公告)日：2005-08-04

申请号：US11092804

申请日：2005-03-30

申请人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

IPC分类号： H01L21/027 ,  G03F7/09 ,  H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L21/00

CPC分类号： H01L21/02389 ,  G03F7/091 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/32341

摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

公开(公告)号：US20230143978A1

公开(公告)日：2023-05-11

申请号：US17930114

申请日：2022-09-07

申请人： Masahiro Ishida ,  Shogo Nakamoto ,  Takuya Okamoto ,  Hiroki Hamashoji

发明人： Masahiro Ishida ,  Shogo Nakamoto ,  Takuya Okamoto ,  Hiroki Hamashoji

IPC分类号： H04N1/00

CPC分类号： H04N1/00708 ,  H04N1/00737 ,  H04N1/00761 ,  H04N1/00827

摘要： A reading device includes a carriage movable in a sub-scanning direction, an optical sensor mounted on the carriage, the optical sensor being configured to scan an object placed on a contact glass, a reference scale used as a reference when a dimension of the object is computed based on an image obtained as the optical sensor scans the object, a flat gauge to be scanned by the optical sensor to calculate a corrective value used to correct the image obtained by the optical sensor, and circuitry to calculate the corrective value based on a scanned image including the reference scale and the flat gauge obtained by the optical sensor, and correct, based on the corrective value, a measurement image including an image of the object and an image of the reference scale obtained by the optical sensor and compute the dimension of the object based on the corrected measurement image.