公开(公告)号：US6048397A

公开(公告)日：2000-04-11

申请号：US998835

申请日：1997-12-29

申请人： Masahisa Endo ,  Masataka Watanabe ,  Tsuneyuki Kaise, deceased

发明人： Masahisa Endo ,  Masataka Watanabe ,  Tsuneyuki Kaise, deceased

IPC分类号： H01L21/205 ,  H01L33/30 ,  C30B25/04

CPC分类号： H01L33/305

摘要： A GaAsP epitaxial wafer 10 which has a GaAs.sub.1-x P.sub.x (0.45

摘要翻译： 具有通过用氮掺杂恒定组成层而形成的GaAs1-xPx（0.45

公开(公告)号：US5759264A

公开(公告)日：1998-06-02

申请号：US619294

申请日：1996-03-21

申请人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endo

发明人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endo

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/16 ,  H01L33/30 ,  C30B25/14

CPC分类号： H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/0062 ,  Y10S117/902

摘要： A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.

摘要翻译： 公开了一种具有均匀厚度的GaAs1-xPx外延层的气相生长方法。 该方法允许通过设置半导体单晶基板在多个半导体单晶基板1上形成GaAs1-xPx外延层（其中x表示满足表达式0≤x≤1的合金组成） 1在位于气相生长装置30内的晶片保持器16上的适当位置，作为基板的总表面积与晶片保持器16的表面积的覆盖率不小于70％。

公开(公告)号：US4987472A

公开(公告)日：1991-01-22

申请号：US409132

申请日：1989-09-19

申请人： Masahisa Endo ,  Nobuhiko Noto ,  Toshiharu Takahashi

发明人： Masahisa Endo ,  Nobuhiko Noto ,  Toshiharu Takahashi

IPC分类号： H01L21/205 ,  H01L33/16 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L33/16

摘要： An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from said single epitaxial wafer the growth rate of the epitaxial layer when the substrate wafer has a crystallographic surface plane which is inclined from the {001} plane in the direction by 8.degree. to 15.degree. or a crystallographically equivalent plane thereto.

公开(公告)号：US5406093A

公开(公告)日：1995-04-11

申请号：US230538

申请日：1994-04-20

申请人： Masahisa Endo ,  Akio Nakamura ,  Susumu Higuchi

发明人： Masahisa Endo ,  Akio Nakamura ,  Susumu Higuchi

IPC分类号： H01L33/30 ,  H01L33/00

CPC分类号： H01L33/305

摘要： A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.

摘要翻译： 一种GaP纯绿色发光元件基板，包括形成在GaP单晶衬底10上的n型GaP层12和p型GaP层14，其特征在于，在pn结部分形成中间GaP层13 在所述n型GaP层12和所述p型GaP层14之间，其中所述中间GaP层的供体浓度ND小于1×10-16原子/ cm3，受主浓度NA几乎等于供体浓度ND。 中间GaP层13的厚度在3-5微米的范围内。

公开(公告)号：US5366552A

公开(公告)日：1994-11-22

申请号：US897169

申请日：1992-06-11

申请人： Masato Yamada ,  Takao Takenaka ,  Masahisa Endo

发明人： Masato Yamada ,  Takao Takenaka ,  Masahisa Endo

IPC分类号： C30B19/06 ,  H01L21/208

CPC分类号： C30B19/061

摘要： A method and an apparatus capable of efficiently producing an epitaxial layer grown at one time on a multiplicity of substrates with uniform thickness and quality are disclosed, in which a sealable growth chamber filled in a solution used to achieve liquid-phase epitaxial growth and holding therein at least one row of thin plate-like substrate is turned about the horizontal axis. The growth chamber is tilted or overturned so that the solution in the growth chamber is stirred homogeneously and the effect of gravity on the solution is excluded. A solution chamber for holding therein the solution is connected with the growth chamber via a gate valve. After the liquid-phase epitaxial growth, the growth chamber is overturned and then the gate valve is opened so that the solution in the growth chamber returns to the solution chamber. Thus, reuse of the solution is possible.

摘要翻译： 公开了一种能够有效地制造在多个均匀厚度和质量的基板上一次生长的外延层的方法和装置，其中填充有用于实现液相外延生长和保持在其中的溶液的可密封的生长室 至少一排薄板状基板围绕水平轴转动。 生长室倾斜或翻转，使得生长室中的溶液均匀搅拌，排除重力对溶液的影响。 用于保持溶液的溶液室通过闸阀与生长室连接。 在液相外延生长之后，生长室被翻转，然后打开闸阀，使得生长室中的溶液返回溶液室。 因此，解决方案的重用是可能的。

公开(公告)号：US06847056B2

公开(公告)日：2005-01-25

申请号：US10240101

申请日：2002-01-29

申请人： Nobuhiko Noto ,  Masato Yamada ,  Masahisa Endo ,  Hitoshi Ikeda ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

发明人： Nobuhiko Noto ,  Masato Yamada ,  Masahisa Endo ,  Hitoshi Ikeda ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

IPC分类号： H01L33/32 ,  H01L33/42 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0079

摘要： A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.

摘要翻译： 发光器件100具有以下结构：作为电极接触层的ap型InGaAs层7和作为氧化物透明电极层的ITO电极层8按照发光层部分的第一主表面17侧的顺序形成 在发光层部分24的第二主表面18侧，依次形成作为电极接触层的n型InGaAs层9和作为氧化物透明电极层的ITO电极层10。 在发光层部分24的两个主表面17和18上形成ITO电极层8和10以及p型InGaAs层7和n型InGaAs层9，以覆盖相应的两个主表面17 全部为18。

公开(公告)号：US06781158B2

公开(公告)日：2004-08-24

申请号：US10131076

申请日：2002-04-25

申请人： Akio Nakamura ,  Masayuki Shinohara ,  Masahisa Endo

发明人： Akio Nakamura ,  Masayuki Shinohara ,  Masahisa Endo

IPC分类号： H01L3300

CPC分类号： H01L33/30 ,  H01L33/305 ,  H01L33/32

摘要： A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element 1 has a p-n junction interface responsible for light emission formed between a p-type GaAs1-aPa layer 9 and an n-type GaAs1-aPa layer 8, and has a nitrogen-doped zone 8c formed in a portion including the p-n junction interface between such p-type GaAs1-aPa layer 9 and n-type GaAs1-aPa layer 8. Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone 8c while keeping a mixed crystal ratio a of the p-type GaAs1- aPa layer 9 and n-type GaAs1-aPa layer 8 constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone 8c so as to fall within a range from 1.05Yp to 1.5Yp, where Yp is defined as a peak nitrogen concentration whereat the emission luminance of the light emitting element will become maximum at a mixed crystal ratio a.

摘要翻译： 提供能够长期保持优异的发光特性的GaAsP基发光元件及其制造方法。 发光元件1具有负责在p型GaAs1-aPa层9和n型GaAs1-aPa层8之间形成的发光的pn结界面，并且具有氮化区8c，该氮掺杂区8c形成在包括 这种p型GaAs1-aPa层9和n型GaAs1-aPa层8之间的pn结界面。这样的元件可以通过在保持氮掺杂区8c的氮浓度Y的同时制造多个发光元件来制造 p型GaAs1-aPa层9和n型GaAs1-aPa层8的混晶比a恒定; 通过测量各个发光元件的发光亮度来发现发光亮度/氮浓度关系; 并将氮掺杂区8c的氮浓度调整到1.05Y〜1.5Yp的范围内，其中Yp被定义为在混合的发光元件的发光亮度将变得最大的峰值氮浓度 晶体比a。

公开(公告)号：US5362683A

公开(公告)日：1994-11-08

申请号：US205558

申请日：1994-03-04

申请人： Takao Takenaka ,  Masahisa Endo ,  Masato Yamada

发明人： Takao Takenaka ,  Masahisa Endo ,  Masato Yamada

IPC分类号： C30B19/00 ,  H01L21/20 ,  H01L21/208 ,  H01L21/304 ,  H01L21/302

CPC分类号： H01L21/304 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S117/915

摘要： To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.

摘要翻译： 通过有效的外延生长工艺以更低的成本制造具有更少量的半导体晶体的外延晶片。 通过外延生长，通过在晶体平面取向为{100}的GaAs衬底晶片的两侧上形成具有相同结构的GaAlAs层来制造外延晶片。 然后将外延晶片在GaAs衬底晶片部分中分成两片，以获得两个外延晶片。 为了进行外延生长处理，将多个GaAs衬底晶片保持在其边缘，然后将GaAs衬底晶片以规定的空间间隔放置在Ga溶液中。 为了将GaAs衬底部分中的外延晶片分成两片，平行于主表面切割衬底晶片部分。 或者，也可以通过蚀刻去除GaAs衬底晶片，同时外延晶片在蚀刻溶液中以高速旋转。