摘要:
A control circuit (20) of a mass flow control device (1) retains the relation (Cd=f(ReTH)) between the Reynolds number and the actual discharge coefficient of a sonic nozzle (13) in the area where the Reynolds number is small. In such an area, the sonic nozzle can be used as a variable mass flow element for controlling mass flow rate. If a pressure Pu and a temperature Tu of an upstream fluid of the sonic nozzle 13 are detected, the theoretical mass flow rate QmTH and the theoretical Reynolds number ReTH can be calculated; since the actual discharge coefficient Cd can be calculated by the above relationship Cd=f(ReTH) based on the calculated Reynolds number, the actual mass flow rate Qm can be calculated based on the relation of Qm=Cd.multidot.QmTH. In the control circuit 20, in order to obtain the predetermined mass flow rate Qm, the upstream fluid pressure Pu and temperature Tu of the sonic nozzle are obtained based on the above relationship, and a variable valve (12) is driven so that the mass flow rate may have this value. Since the properties of the sonic nozzle can be made full use of, it is possible to control trace amounts of mass flow rate with extremely high accuracy.
摘要:
A plastic encapsulant for a semiconductor chip comprises an epoxy resin, an organosilicon compound, a hardener, a pigment, and an organic solvent. The epoxy resin is an epichlorohydrin-bisphenol A type epoxy resin, and the organosilicon compound is an organosilicon compound with a methoxy group, preferably, three methoxy groups. The hardener is a resol type phenol resin hardener. The organic solvent is a mixture of ketones, alcohols, and aromatic hydrocarbons.
摘要:
In a semiconductor device of the Dual In-line Plug-in Package type, input terminals for receiving, for example, key input signals derived from key input means are aligned on a side of the semiconductor device, and output terminals for developing, for example, driving signals for display means are aligned on another side of said semiconductor device. The input terminals and the output terminals function, in combination, not only to electrically connect the key input means, the semiconductor device and the display means with one another, but also to mechanically connect a circuit board for supporting the key input means and another circuit board for supporting the display means with each other.
摘要:
A welding structural part 1 is manufactured by overlapping the surfaces of steel sheets 2, and forming a weld zone by spot welding. The weld zone 3 includes: a weld nugget 4; and a heat affected zone 5 surrounding the weld nugget 4, wherein the hardness in the weld zone increases along an exterior region 6 of the heat affected zone 5 toward the heat affected zone 5, and then decreases along the heat affected zone 5 toward the central region of the weld nugget 4. In the boundary region between the weld nugget 4 and the heat affected zone 5, the weld nugget 4 may have a convex portion 4A bulging into the heat affected zone 5 along the overlapped portion. The steel sheets 2 contain carbon in 0.15 mass % or more.
摘要:
Raised contacts included within a semiconductor chip are bonded to respective external leads through the use of a bonding tool. The raised contacts and/or the external leads are varied in a fashion depending on their locations on a semiconductor substrate so as to compensate for lack of uniformity of the surface temperature of the bonding tool.
摘要:
Electrodes are formed on one major surface of a semiconductor chip and electrically connected to lead electrodes carried by a support substrate. A cover plate is fixed to the opposing major surface of the semiconductor chip to determine one major surface of semiconductor device. Remaining surfaces of the semiconductor chip are encapsulated by a resin mold. The cover plate comprises a flexible glass cloth impregnated with half cured epoxy resin.
摘要:
A ferritic steel having tensile properties and fatigue properties capable of withstanding use in a hydrogen environment and a method of manufacture thereof are provided. By adding one or more element selected from among vanadium (V), titanium (Ti) and niobium (Nb) so that the steel includes, together with at least ferrite grains in the structure, a carbide or carbides of one or more element selected from among V, Ti and Nb, the reduction of area and the fatigue crack propagation rate of the ferritic steel in a hydrogen environment are improved. The advantages of the invention were confirmed in cases where the ferrite grains are small grains of 1 μm or less in size, and in cases where the ferrite grains are coarse grains from several micrometers to 20 μm in size, and moreover in cases where the ferrite grains are coarse grains from several micrometers to 60 μm in size.
摘要:
A trip throttle valve with a manual exerciser and combination of a hydraulic piston and a biasing force bearing sleeve is provided in place of a piston. The piston is not directly connected to a valve stem and the sleeve is threadably engaged with the valve stem so as to cause relative axial movement between the sleeve and the valve stem when the stem is rotated through the manual exerciser. The hydraulic portion of the valve is provided with a by-pass passage so that the piston is made axially movable toward the sleeve under the pressure which occurs when the by-pass passage for the hydraulic liquid is blocked but the piston is arrested at a certain axial position where the by-pass passage is still blocked and the axial movement of the sleeve is restricted against the piston. Blocking of the by-pass passage is arranged to take place after the axial separating distance between the sleeve and the piston reaches a predetermined value so that any inadvertent movement of the valve stem by the engagement of the piston with the sleeve is avoided.
摘要:
A semiconductor wafer is supported by a supporting plate via adhesive in some steps of fabricating a semiconductor device. The supporting plate is a porous ceramic plate impregnated with or painted with resin such as epoxy resin, silicone resin and polyimide varnish. The porous ceramic supporting plate has a low thermal conductivity to ensure stable bonding operation.
摘要:
A high-strength die-quenched part 1 is formed by heating a high-strength steel sheet 11 up to an austenite region, hot stamping and cooling inside a mold, and its microstructure has the martensite wherein carbide particles 2 are finely dispersed over an entire region including prior-austenite grain boundaries. It is desirable that the prior-austenite grain size in the microstructure of the high-strength steel sheet, which is a base material, be 10 μm or smaller. The high-strength die-quenched part has high-strength and high-ductility thanks to its martensite.