公开(公告)号：US4536786A

公开(公告)日：1985-08-20

申请号：US39820

申请日：1979-05-17

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

IPC分类号： H01L21/603 ,  H01L21/60 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L24/50 ,  H01L24/79 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/15787

摘要： Raised contacts included within a semiconductor chip are bonded to respective external leads through the use of a bonding tool. The raised contacts and/or the external leads are varied in a fashion depending on their locations on a semiconductor substrate so as to compensate for lack of uniformity of the surface temperature of the bonding tool.

摘要翻译： 包含在半导体芯片内的升高的触点通过使用接合工具被接合到相应的外部引线。 升高的触点和/或外部引线以取决于它们在半导体衬底上的位置的方式变化，以便补偿焊接工具的表面温度的不均匀性。

公开(公告)号：US4300153A

公开(公告)日：1981-11-10

申请号：US190744

申请日：1980-09-25

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/28 ,  H01L23/02 ,  H01L39/02

CPC分类号： H01L23/3121 ,  H01L21/56 ,  H01L2224/16

摘要： Electrodes are formed on one major surface of a semiconductor chip and electrically connected to lead electrodes carried by a support substrate. A cover plate is fixed to the opposing major surface of the semiconductor chip to determine one major surface of semiconductor device. Remaining surfaces of the semiconductor chip are encapsulated by a resin mold. The cover plate comprises a flexible glass cloth impregnated with half cured epoxy resin.

摘要翻译： 电极形成在半导体芯片的一个主表面上并电连接到由支撑衬底承载的引线电极。 盖板固定到半导体芯片的相对主表面以确定半导体器件的一个主表面。 半导体芯片的剩余表面被树脂模具封装。 盖板包括浸渍有半固化环氧树脂的柔性玻璃布。

公开(公告)号：US4247590A

公开(公告)日：1981-01-27

申请号：US858636

申请日：1977-12-08

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Teruo Horii ,  Masao Kumura ,  Yasunori Chikawa

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Teruo Horii ,  Masao Kumura ,  Yasunori Chikawa

IPC分类号： H01L21/683 ,  H01L21/60 ,  H05K1/03 ,  B32B3/00 ,  B32B3/26

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L2224/2919 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01014 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/09701 ,  H05K1/0306 ,  Y10T428/24926 ,  Y10T428/249994

摘要： A semiconductor wafer is supported by a supporting plate via adhesive in some steps of fabricating a semiconductor device. The supporting plate is a porous ceramic plate impregnated with or painted with resin such as epoxy resin, silicone resin and polyimide varnish. The porous ceramic supporting plate has a low thermal conductivity to ensure stable bonding operation.

摘要翻译： 半导体晶片在制造半导体器件的一些步骤中通过粘合剂由支撑板支撑。 支撑板是浸渍或用树脂涂覆的多孔陶瓷板，例如环氧树脂，硅树脂和聚酰亚胺清漆。 多孔陶瓷支撑板具有低导热性，以确保稳定的接合操作。

公开(公告)号：US4151543A

公开(公告)日：1979-04-24

申请号：US786841

申请日：1977-04-12

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

IPC分类号： H03H9/02 ,  H01L21/60 ,  H01L23/14 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L24/81 ,  H01L23/145 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/18301

摘要： A semiconductor device comprises an insulating substrate such as a film carrier having wiring patterns formed thereon, lead electrodes connected to the wiring patterns, and a semiconductor chip bonded to the lead electrodes. The surface of the lead electrodes, to which the semiconductor chip is bonded, is smooth as compared with that of the wiring patterns, thereby ensuring accurate operation of the semiconductor device.

摘要翻译： 半导体器件包括绝缘基板，例如其上形成有布线图案的薄膜载体，连接到布线图案的引线电极和接合到引线电极的半导体芯片。 与布线图形相比，半导体芯片接合的引线电极的表面平滑，从而确保半导体器件的精确操作。

公开(公告)号：US4280132A

公开(公告)日：1981-07-21

申请号：US84542

申请日：1979-10-15

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Masao Kumura

IPC分类号： H01L23/28 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495 ,  H01L23/498 ,  H01L23/48 ,  H01L29/44 ,  H01L29/60

CPC分类号： H01L23/3157 ,  H01L23/49541 ,  H01L23/49558 ,  H01L23/49838 ,  H01L2224/16 ,  Y10T29/49121

摘要： Blocking members are provided for limiting mold spread over a desirable area while a semiconductor is molded. The blocking members are composed within a metallic layer together with metallic leads by photoetching techniques. The blocking members are positioned at four corners of an aperture in a predetermined pattern of generally radial fingers extending cantilever-wise inwardly beyond the periphery of the aperture. The semiconductor is adapted to engage bumps on the semiconductor to the metallic leads by wire bonding methods. Extended portions of the metallic leads may also function as the blocking members, with the metallic leads being positioned at the four corners of the aperture.

摘要翻译： 提供了阻挡构件，用于在模制半导体时限制模具在所需区域上的扩展。 阻挡构件通过光刻技术与金属引线一起组成金属层。 阻挡构件定位在孔径的四个角部处，其以大致径向指状物的预定图案延伸，向内延伸超过孔的周边。 半导体适于通过引线接合方法将半导体上的凸块接合到金属引线。 金属引线的延伸部分也可以用作阻挡构件，金属引线位于孔的四个角处。

公开(公告)号：US4926239A

公开(公告)日：1990-05-15

申请号：US390448

申请日：1989-08-02

申请人： Kazuya Fujita ,  Takamichi Maeda ,  Masao Hayakawa

发明人： Kazuya Fujita ,  Takamichi Maeda ,  Masao Hayakawa

IPC分类号： H01L23/29

CPC分类号： H01L23/293 ,  H01L24/50 ,  H01L2924/13091 ,  H01L2924/14 ,  Y10T428/239

摘要： A plastic encapsulant for a semiconductor chip comprises an epoxy resin, an organosilicon compound, a hardener, a pigment, and an organic solvent. The epoxy resin is an epichlorohydrin-bisphenol A type epoxy resin, and the organosilicon compound is an organosilicon compound with a methoxy group, preferably, three methoxy groups. The hardener is a resol type phenol resin hardener. The organic solvent is a mixture of ketones, alcohols, and aromatic hydrocarbons.

摘要翻译： 用于半导体芯片的塑料密封剂包括环氧树脂，有机硅化合物，硬化剂，颜料和有机溶剂。 环氧树脂是表氯醇 - 双酚A型环氧树脂，有机硅化合物是具有甲氧基的有机硅化合物，优选三个甲氧基。 固化剂是甲阶型酚醛树脂固化剂。 有机溶剂是酮，醇和芳烃的混合物。

公开(公告)号：US5310699A

公开(公告)日：1994-05-10

申请号：US905683

申请日：1992-06-29

申请人： Yasunori Chikawa ,  Shigeyuki Sasaki ,  Katsunobu Mori ,  Takamichi Maeda ,  Masao Hayakawa

发明人： Yasunori Chikawa ,  Shigeyuki Sasaki ,  Katsunobu Mori ,  Takamichi Maeda ,  Masao Hayakawa

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L21/28 ,  H01L21/447 ,  H01L21/92

CPC分类号： H01L24/11 ,  H01L23/53242 ,  H01L23/53252 ,  H01L24/13 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941

摘要： A method of manufacturing a semiconductor device with a bump-electrode of gold crystal is disclosed. The method includes providing a semiconductor substrate, an insulative layer, an electrode section, passivation layer on the edge portion of the electrode section, a multi-layer film, and a bump electrode of gold crystal. The method further includes heat treatment of the bump electrode to form an anticorrosive layer between the electrode section and the lower layer of the multi-layer film. Removing the unnecessary multi-layer film, the anticorrosive layer is used as a mask for etching to simplify the process of manufacturing the semiconductor device.

摘要翻译： 公开了一种制造具有金晶体凸块电极的半导体器件的方法。 该方法包括在电极部分的边缘部分上提供半导体衬底，绝缘层，电极部分，钝化层，多层膜和金晶体的凸块电极。 该方法还包括对凸块电极进行热处理，以在多层膜的电极部分和下层之间形成防腐蚀层。 为了简化半导体器件的制造工序，除去不需要的多层膜，将防腐蚀层用作蚀刻掩模。

公开(公告)号：US4383363A

公开(公告)日：1983-05-17

申请号：US163634

申请日：1980-06-27

申请人： Masao Hayakawa ,  Takamichi Maeda ,  Mituwo Oda

发明人： Masao Hayakawa ,  Takamichi Maeda ,  Mituwo Oda

IPC分类号： H05K1/00 ,  H05K3/00 ,  H05K3/18 ,  H05K3/24 ,  H05K3/40 ,  H05K3/02

CPC分类号： H05K3/4069 ,  H05K1/0393 ,  H05K2201/0347 ,  H05K2201/0355 ,  H05K2203/0195 ,  H05K2203/0338 ,  H05K2203/0554 ,  H05K2203/1461 ,  H05K3/0047 ,  H05K3/181 ,  H05K3/246 ,  Y10T29/49156

摘要： A conductive paste is disposed in a through hole to provide communication between wiring patterns formed on both of the major surfaces of an insulator substrate. Conductive layers integral with the wiring patterns are formed on the both major surfaces of the insulator substrate so that the conductive layers extend across the through hole. The conductive layers make contact with the conductive paste disposed in the through hole and function to enclose the both ends of the conductive paste.

摘要翻译： 在通孔中设置导电膏以提供形成在绝缘体基板的两个主表面上的布线图案之间的连通。 在绝缘体基板的两个主表面上形成与布线图形一体的导电层，使得导电层延伸穿过通孔。 导电层与布置在通孔中的导电膏接触，并且用于封装导电膏的两端。

公开(公告)号：US4120041A

公开(公告)日：1978-10-10

申请号：US747059

申请日：1976-12-03

申请人： Masao Hayakawa ,  Masahiro Nomura

发明人： Masao Hayakawa ,  Masahiro Nomura

IPC分类号： H05K1/14 ,  H05K1/18 ,  G06F15/00 ,  H05K1/04

CPC分类号： H05K1/145 ,  H05K1/18 ,  H05K2201/10037 ,  H05K2201/10053 ,  H05K2201/10136 ,  H05K2201/10689

摘要： In a semiconductor device of the Dual In-line Plug-in Package type, input terminals for receiving, for example, key input signals derived from key input means are aligned on a side of the semiconductor device, and output terminals for developing, for example, driving signals for display means are aligned on another side of said semiconductor device. The input terminals and the output terminals function, in combination, not only to electrically connect the key input means, the semiconductor device and the display means with one another, but also to mechanically connect a circuit board for supporting the key input means and another circuit board for supporting the display means with each other.

摘要翻译： 在双列直插式封装类型的半导体器件中，用于接收例如从键输入装置导出的键输入信号的输入端子在半导体器件的一侧对齐，并且例如用于显影的输出端子 ，用于显示装置的驱动信号在所述半导体器件的另一侧对准。 输入端子和输出端子组合起来不仅将键输入装置，半导体装置和显示装置彼此电连接，而且机械地连接用于支撑键输入装置的电路板和另一电路 用于支持显示装置的板。

公开(公告)号：US09498840B2

公开(公告)日：2016-11-22

申请号：US13388239

申请日：2010-07-30

申请人： Takahiko Kanai ,  Munehisa Hatta ,  Fumiaki Ikuta ,  Kazuhiro Kawasaki ,  Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehiko Itagaki

发明人： Takahiko Kanai ,  Munehisa Hatta ,  Fumiaki Ikuta ,  Kazuhiro Kawasaki ,  Eizaburou Nakanishi ,  Masayuki Miyake ,  Kotobu Nagai ,  Masao Hayakawa ,  Takehiko Itagaki

IPC分类号： B23K9/28 ,  B23K11/11 ,  B23K11/24 ,  B23K11/26 ,  B23K11/31 ,  C22C38/00

CPC分类号： B23K11/115 ,  B23K11/24 ,  B23K11/26 ,  B23K11/312 ,  B23K2101/006 ,  B23K2101/18 ,  B23K2103/04 ,  C22C38/00 ,  Y10T428/12965

摘要： A welding structural part 1 is manufactured by overlapping the surfaces of steel sheets 2, and forming a weld zone by spot welding. The weld zone 3 includes: a weld nugget 4; and a heat affected zone 5 surrounding the weld nugget 4, wherein the hardness in the weld zone increases along an exterior region 6 of the heat affected zone 5 toward the heat affected zone 5, and then decreases along the heat affected zone 5 toward the central region of the weld nugget 4. In the boundary region between the weld nugget 4 and the heat affected zone 5, the weld nugget 4 may have a convex portion 4A bulging into the heat affected zone 5 along the overlapped portion. The steel sheets 2 contain carbon in 0.15 mass % or more.

摘要翻译： 通过重叠钢板2的表面，通过点焊形成焊接区域来制造焊接结构体1。 焊接区3包括：焊点4; 以及围绕焊点4的热影响区域5，其中焊接区域中的硬度沿着热影响区域5的外部区域6朝向热影响区域5增加，然后沿热影响区域5朝向中心 在焊接熔核4与热影响区5之间的边界区域中，焊点4可以具有沿重叠部分向热影响区5内凸出的凸部4A。 钢板2含有0.15质量％以上的碳。