摘要:
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要:
A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.
摘要:
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要翻译:提供具有稳定的谐振频率的温度特性的压电薄膜谐振器,其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板,所述第一和第二绝缘膜设置在基板的一个表面上,同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3,以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
摘要:
A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.
摘要:
A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.
摘要:
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要翻译:提供具有稳定的谐振频率的温度特性的压电薄膜谐振器,其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板,所述第一和第二绝缘膜设置在基板的一个表面上,同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3,以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
摘要:
A piezoelectric filter includes a piezoelectric thin film disposed on a silicon substrate, and a plurality of piezoelectric resonators each having electrodes facing each other with the piezoelectric thin film sandwiched therebetween, and each of the plurality of piezoelectric resonators has a filtering function. The electrode material of one of the piezoelectric resonators is different from the electrode material of the other piezoelectric resonators. For example, the former electrode material has a higher stiffness than the latter electrode material. The piezoelectric filter achieves high-Q resonance and improves the attenuation characteristic.
摘要:
A manufacturing method for an electronic component includes a process of forming a lower electrode and a dummy electrode, which are electrically connected to each other, on a substrate, and a process of forming a piezoelectric thin film on the dummy electrode and the lower electrode while a predetermined bias potential is applied to the lower electrode via the dummy electrode. In this method, the piezoelectric thin film is formed on the lower electrode by stabilizing the potential of the lower electrode, thereby decreasing the surface roughness of the piezoelectric thin film. It is thus possible to manufacture an electronic component that exhibits excellent piezoelectric characteristics, in which the electromechanical coupling coefficient and the quality factor of a resonator are increased.
摘要:
A manufacturing method for an electronic component includes a process of forming a lower electrode and a dummy electrode, which are electrically connected to each other, on a substrate, and a process of forming a piezoelectric thin film on the dummy electrode and the lower electrode while a predetermined bias potential is applied to the lower electrode via the dummy electrode. In this method, the piezoelectric thin film is formed on the lower electrode by stabilizing the potential of the lower electrode, thereby decreasing the surface roughness of the piezoelectric thin film. It is thus possible to manufacture an electronic component that exhibits excellent piezoelectric characteristics, in which the electromechanical coupling coefficient and the quality factor of a resonator are increased.
摘要:
A thin-film piezoelectric resonator having a thin-film portion with a piezoelectric thin film disposed between a pair of opposing electrodes, an insulating layer formed on one of the pair of electrodes of the thin-film portion, and a substrate supporting the other electrode of the thin-film portion. The thin-film portion and the insulating layer together vibrate in at least one mode of second and higher harmonic modes, and an antinode in the at least one mode of the second and higher harmonic modes is located in the insulating layer.