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    Light emitting device
    1.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号：US5291098A

    公开(公告)日：1994-03-01

    申请号：US848124

    申请日：1992-03-09

    申请人： Masami Okita ,  Katsuhiro Akimoto

    发明人： Masami Okita ,  Katsuhiro Akimoto

    IPC分类号： H01L33/04 ,  H01L33/28 ,  H01L33/42 ,  H01L33/50 ,  H05B33/12 ,  H05B33/26 ,  H01J1/54 ,  F21K2/00

    CPC分类号： H05B33/26 ,  H05B33/12

    摘要： A light emitting device has a transparent substrate, a substantially transparent first electrode layer formed on the transparent substrate, a phosphor layer formed on the first electrode layer, a second electrode layer formed on the phosphor layer, an insulating layer formed on the second electrode layer, and a third electrode layer formed on the insulating layer. A hot electron is generated by the application of a voltage to the second and third electrode layers, and the light emitting device is energized to become luminuous by injecting the hot electron thus generated into the phosphor layer.

    摘要翻译： 发光器件具有透明基板，形成在透明基板上的基本上透明的第一电极层，形成在第一电极层上的荧光体层，形成在荧光体层上的第二电极层，形成在第二电极层上的绝缘层 ，以及形成在所述绝缘层上的第三电极层。 通过向第二和第三电极层施加电压来产生热电子，并且通过将由此产生的热电子注入到荧光体层中来使发光器件通电而变得发亮。

    Semiconductor laser with ZnMgSSe cladding layers
    2.
    发明授权
    Semiconductor laser with ZnMgSSe cladding layers 失效
    具有ZnMgSSe覆层的半导体激光器

    公开(公告)号：US5515393A

    公开(公告)日：1996-05-07

    申请号：US101725

    申请日：1993-08-04

    申请人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Takao Miyajima ,  Masafumi Ozawa ,  Yuko Morinaga ,  Futoshi Hiei ,  Kazushi Nakano ,  Toyoharu Ohata

    发明人： Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Takao Miyajima ,  Masafumi Ozawa ,  Yuko Morinaga ,  Futoshi Hiei ,  Kazushi Nakano ,  Toyoharu Ohata

    IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/327 ,  H01S5/34 ,  H01S5/347 ,  H01S3/18

    CPC分类号： B82Y20/00 ,  H01S5/327 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/3409 ,  H01S5/347

    摘要： A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.

    摘要翻译： 公开了一种半导体激光器，其使用能够发出蓝色至绿色光的II-VI族化合物半导体作为覆盖层的材料。 在半导体激光器的一个方面，n型ZnSe缓冲层，n型ZnMgSSe覆层，由例如ZnCdSe，p型ZnMgSSe覆层和p型ZnSe接触层制成的有源层 依次堆叠在n型GaAs衬底上。 提供与p型ZnSe接触层接触的诸如Au / Pd电极的p侧电极。 在n型GaAs衬底的背表面上设置诸如In电极的n侧电极。 在半导体激光器的另一方面，在n型ZnMgSSe包层和有源层之间设置由ZnSSe，ZnMgSSe或ZnSe制成的n型导光层，以及由ZnSSe，ZnMgSSe制成的p型光导层 或ZnSe被提供在p型ZnMgSSe包覆层和有源层之间。

    Semiconductor laser
    4.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5268918A

    公开(公告)日：1993-12-07

    申请号：US838925

    申请日：1992-02-21

    申请人： Katsuhiro Akimoto ,  Hiroyuki Okuyama

    发明人： Katsuhiro Akimoto ,  Hiroyuki Okuyama

    IPC分类号： H01S5/04 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

    CPC分类号： H01S5/327 ,  H01S5/041 ,  H01S5/3213

    摘要： A double heterojunction II-VI group compound semiconductor laser has a substrate of GaAs or Gap, a first cladding layer, an active layer, and a second cladding layer which are successively deposited on the substrate by way of epitaxial growth. One or both of the first and second cladding layers have a composition of ZnMgSSe.

    摘要翻译： 双异质结II-VI族化合物半导体激光器具有通过外延生长连续沉积在衬底上的GaAs或Gap衬底，第一覆层，有源层和第二覆层。 第一和第二包覆层中的一个或两个具有ZnMgSSe的组成。

    Method of fabricating of light emitting device with controlled lattice mismatch
    5.
    发明授权
    Method of fabricating of light emitting device with controlled lattice mismatch 失效
    具有受控晶格失配的发光器件的制造方法

    公开(公告)号：US5872023A

    公开(公告)日：1999-02-16

    申请号：US829214

    申请日：1997-03-31

    申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

    CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

    摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

    摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成 作为S，Se，Te。 第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

    Semiconductor light emitting device with lattice-matching and lattice-mismatching
    7.
    发明授权
    Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效
    具有晶格匹配和晶格失配的半导体发光器件

    公开(公告)号：US5633514A

    公开(公告)日：1997-05-27

    申请号：US570376

    申请日：1995-12-11

    申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327

    CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

    摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

    摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成， 作为S，Se，Te。 在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

    Semiconductor light emitting device
    8.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US5375134A

    公开(公告)日：1994-12-20

    申请号：US232410

    申请日：1994-04-25

    申请人： Hiroyuki Okuyama ,  Katsuhiro Akimoto

    发明人： Hiroyuki Okuyama ,  Katsuhiro Akimoto

    IPC分类号： H01S5/04 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

    CPC分类号： H01S5/327 ,  H01S5/041 ,  H01S5/3211 ,  H01S5/3213

    摘要： A semiconductor laser has a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type, which are successively deposited on a semiconductor substrate by epitaxial growth. The first cladding layer and/or the second cladding layer is made of a compound semiconductor material of a zincblende crystal structure containing Mg.

    摘要翻译： 半导体激光器具有第一导电类型的第一包层，有源层和第二导电类型的第二包覆层，其通过外延生长连续地沉积在半导体衬底上。 第一包层和/或第二包层由包含Mg的锌辉石晶体结构的化合物半导体材料制成。

    Apparatus for detecting a flame using weighted time intervals
    9.
    发明授权
    Apparatus for detecting a flame using weighted time intervals 失效
    用于使用加权时间间隔检测火焰的装置

    公开(公告)号：US5227640A

    公开(公告)日：1993-07-13

    申请号：US897364

    申请日：1992-06-11

    申请人： Shintaro Nomura ,  Katsuhiro Akimoto

    发明人： Shintaro Nomura ,  Katsuhiro Akimoto

    IPC分类号： F23N5/08 ,  G08B17/12

    CPC分类号： F23N5/082 ,  G08B17/12 ,  F23N2023/08 ,  F23N2029/00

    摘要： In a flame detecting apparatus for detecting the flame of fire or the like using a sensor 1, a signal processing unit 3 includes a span counting section 5 for dividing a time base into several time spans, each having a predetermined time interval, and counting the number of signals output from the sensor 1 as a count value for each span, a count value storage section 6 for storing the count value for each span output from the span counting section 5, and an calculation section 7 for judging the occurrence of flame by taking into account the count values counted for the past spans which have been stored in the count value storage section 6, as well as the count value of the latest span, when the count value of the latest span is output from the span counting section 5. Because the flame occurrence judgment is preformed by taking into consideration the accumulated values of the preceding spans together with the accumulated value of the latest span, not only strong flame of short duration but also weak flame of short duration can accurately be detected.

    摘要翻译： 在用于使用传感器1检测火焰等的火焰检测装置中，信号处理单元3包括用于将时基划分为几个时间跨度的跨度计数部分5，每个时间间隔具有预定的时间间隔，并且对 从传感器1输出的信号数作为每个跨度的计数值，用于存储从量程计数部5输出的每个跨度的计数值的计数值存储部6以及用于判断火焰发生的计算部7 考虑到已经存储在计数值存储部分6中的过去跨度的计数值以及当从跨度计数部分5输出最近跨度的计数值时的最近跨度的计数值 由于火焰发生判断是通过考虑前一跨度的累积值以及最近跨度的累计值来实现的，不仅具有短持续时间的强烈火焰 而且能够准确地检测到短时间的弱火焰。