摘要:
A short-circuit detector has connected between positive and negative terminals of a DC power source a series connection including sequentially a first switch, a first detection resistor, a second detection resistor and a second switch, a third switch between a grounding terminal such as a vehicle chassis and a point between the first and second detection resistors and a voltage detector circuit connected in parallel with the first and second detection resistors. A control circuit is connected to the voltage detector circuit, serving to calculate a voltage value of the DC power source by switching on only the first and second switches, to calculate a first voltage drop value across the first detection resistor by switching on only the first and third switches, to calculate a second voltage drop value across the second detection resistor by switching on only the second and third switches and to determine presence or absence of short-circuited conditions at the positive and negative terminals of the DC power source on the basis of the calculated voltage value, the first voltage drop value and the second voltage drop value.
摘要:
A quaternary ammonium salt of the formula (1), a composition containing the quaternary ammonium salt and an organic solvent, and an electrochemical device using the salt wherein R1 and R2 are both methyl and X− is BF4− or N(CF3SO2)2−.
摘要:
An image forming apparatus includes a transfer material transportation device to transport a transfer material; a transfer device to transfer a toner image to the transfer material transported by the transfer material transportation device; a fusing device, disposed after the transfer device, to fuse a toner image on the transfer material transported by the transfer material transportation device; a registration device, disposed before the transfer device, to feed the transfer material, supplied from a sheet feeder, to the transfer device; and a biasing device, disposed for the registration device, to regulate movement of the registration device to decrease a speed difference between a transfer material transport speed generated by the transfer device and a transfer material transport speed generated by the registration device.
摘要:
A semiconductor laser device includes a nitride semiconductor laminate structure including an n-type clad layer, an n-type guide layer formed on the n-type clad layer, a light emitting layer formed on the n-type guide layer and a p-type semiconductor layer formed on the light emitting layer. The nitride semiconductor laminate structure does not include a p-type semiconductor clad layer. The semiconductor laser device further includes an upper clad layer formed on the p-type semiconductor layer. The upper clad layer includes a first conductive film made of an indium oxide-based material and a second conductive film formed on the first conductive film and made of a zinc oxide-based material, a gallium oxide-based material or a tin oxide-based material.
摘要:
A charged particle beam decelerating device includes a high-frequency cavity 34 provided on an orbit of a charged particle beam 1, and a phase synchronizing device 40 for synchronizing the charged particle beam 1 in the high-frequency cavity with a phase of a high-frequency electric field 4. By moving the high-frequency cavity 34 or changing an orbit length of the charged particle beam 1, the charged particle beam in the high-frequency cavity is synchronized with a phase of the high-frequency electric field 4.
摘要:
Amine compounds represented by Formula (1) are efficacious against diseases such as a viral infectious disease with HIV, rheumatism, and cancer metastasis:
摘要:
Face detection is executed only on an image imaged based on an arbitrary (predetermined) focal point information defined in advance. In face detection, the face of a person is detected based on a relative value of statistics in a plurality of characteristic regions produced by contour or parts of the face of the person. Thus, even if the face in the image used for face detection is blurred, the statistics in a certain region can be acquired, and thus such face is detectable. Therefore, the primary subject to be focused can be rapidly detected without performing focal point control at a stage of preliminary imaging in the imaging apparatus.
摘要:
A washer-dryer apparatus has a blower for sucking air from a water tank and blowing the air into a washing and dewatering tub. At an inlet of the blower is provided a filter, which is cleaned by a cleaning device (300). The cleaning device (300) has a main body (301) pivotable about one end thereof relative to an outer bottom surface of the water tank, a brush (302) provided on the other end of the main body, and a bias spring (303) for biasing the main body toward an opening direction. The main body (301) is subjected to a dynamic pressure of water in the water tank and thereby pivots in an opening direction. When the main body (301) has the pivoting angle of 90°, the brush (302) is in contact with the filter.
摘要:
Face detection is executed only on an image imaged based on an arbitrary (predetermined) focal point information defined in advance. In face detection, the face of a person is detected based on a relative value of statistics in a plurality of characteristic regions produced by contour or parts of the face of the person. Thus, even if the face in the image used for face detection is blurred, the statistics in a certain region can be acquired, and thus such face is detectable. Therefore, the primary subject to be focused can be rapidly detected without performing focal point control at a stage of preliminary imaging in the imaging apparatus.
摘要:
A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.