公开(公告)号：US06983003B2

公开(公告)日：2006-01-03

申请号：US09954221

申请日：2001-09-18

申请人： Masayuki Sonobe ,  Yoshinori Kimura ,  Atsushi Watanabe

发明人： Masayuki Sonobe ,  Yoshinori Kimura ,  Atsushi Watanabe

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/2004 ,  H01S5/3054

摘要： A III-V nitride semiconductor laser device demonstrates an excellent emission characteristic without an increase in production cost. The refractive index of a p-side optical guiding layer is larger than that of an n-side guide layer.

公开(公告)号：US20090278144A1

公开(公告)日：2009-11-12

申请号：US12085564

申请日：2006-11-28

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Mitsuhiko Sakai

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Mitsuhiko Sakai

IPC分类号： H01L33/00

CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01L33/105 ,  H01L33/32 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1-xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1-yN layer (0≦y≦0.5 and y

摘要翻译： 提供一种氮化物半导体发光器件，其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。 氮化物半导体激光器至少包括设置在设置在基板（1）上的第一光反射层（2）上的发光层形成部（3）。 第一光反射层（2）形成为具有彼此不同的折射率的低折射率层（21）和高折射率层（22），并且第一光反射层的低折射率层（21） 形成有Al x Ga 1-x N层（0 <= x <= 1）的单层结构，并且第一光反射层的高折射率层（22）形成有多层结构，其通过交替层叠AlyGa1 -yN层（0 <= y <= 0.5和y

公开(公告)号：US20090206357A1

公开(公告)日：2009-08-20

申请号：US11884456

申请日：2006-02-15

申请人： Norikazu Ito ,  Kazuaki Tsutsumi ,  Toshio Nishida ,  Masayuki Sonobe ,  Mitsuhiko Sakai ,  Atsushi Yamaguchi

发明人： Norikazu Ito ,  Kazuaki Tsutsumi ,  Toshio Nishida ,  Masayuki Sonobe ,  Mitsuhiko Sakai ,  Atsushi Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6). A mesa-like semiconductor lamination portion (6a) is formed by removing a part of the semiconductor lamination portion (6) around a chip by etching, and the mesa-like semiconductor lamination portion (6a) is formed such that a corner part having an angle of 90 degrees or less is rounded and has a curved line in a plan shape, thereby not to have an angle of 90 degrees or less on corner parts.

摘要翻译： 提供了一种氮化物半导体发光器件，其中即使当施加反向电压或者甚至长时间操作时，半导体层也不容易损坏，并且通过在制造器件时防止半导体层劣化，可以获得优异的可靠性。 在基板（1）的表面上，由氮化物半导体构成的包括第一导电型层（p型层（5））和第二导电型层（n型层（3））的半导体层叠部（6） ）），通过其上与p型层（5）电连接的透光导电层（7）设置p侧电极（8），并且n侧电极（9）电气地 连接到半导体层叠部分（6）的下层侧的n型层（3）。 通过蚀刻去除芯片周围的半导体层叠部分（6）的一部分形成台面状半导体层叠部（6a），并且形成台面状半导体层叠部（6a），使得具有 90度以下的角度是圆形的，并且具有平面形状的曲线，从而在角部不具有90度或更小的角度。

公开(公告)号：US20090166608A1

公开(公告)日：2009-07-02

申请号：US12318118

申请日：2008-12-22

申请人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

发明人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/22 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.

摘要翻译： 提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。

公开(公告)号：US20090121240A1

公开(公告)日：2009-05-14

申请号：US12083836

申请日：2006-10-19

申请人： Yukio Shakuda ,  Masayuki Sonobe ,  Norikazu Ito

发明人： Yukio Shakuda ,  Masayuki Sonobe ,  Norikazu Ito

IPC分类号： H01L33/00 ,  H01L29/205 ,  H01L21/205

CPC分类号： H01L33/12 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There is provided a nitride semiconductor device with low leakage current and high efficiency in which, while a zinc oxide based compound such as MgxZn1-xO (0≦x≦0.5) is used for a substrate, crystallinity of nitride semiconductor grown thereon is improved and film separation or cracks are prevented. The nitride semiconductor device is formed by laminating nitride semiconductor layers on a substrate (1) made of a zinc oxide based compound such as MgxZn1-xO (0≦x≦0.5). The nitride semiconductor layers include a first nitride semiconductor layer (2) made of AlyGa1-yN (0.05≦y≦0.2) which is provided in contact with the substrate (1), and nitride semiconductor layers (3) to (5) laminated on the first nitride semiconductor layer (2) so as to form a semiconductor element.

摘要翻译： 提供了一种具有低漏电流和高效率的氮化物半导体器件，其中，当将基于氧化锌的化合物如Mg x Zn 1-x O（0 <= x <= 0.5）用于衬底时，其上生长的氮化物半导体的结晶度为 防止了改进的膜分离或裂纹。 氮化物半导体器件通过在由诸如Mg x Zn 1-x O（0 <= x <= 0.5）的氧化锌基化合物制成的衬底（1）上层叠氮化物半导体层而形成。 氮化物半导体层包括与基板（1）接触地设置的Al y Ga 1-y N（0.05≤y≤0.2）和氮化物半导体层（3）〜（5）构成的第一氮化物半导体层（2） 层压在第一氮化物半导体层（2）上以形成半导体元件。

公开(公告)号：US20070278474A1

公开(公告)日：2007-12-06

申请号：US11789035

申请日：2007-04-23

申请人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Hiroaki Ohta

发明人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Hiroaki Ohta

IPC分类号： H01L31/0312

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： A semiconductor light emitting element includes an active layer of a quantum well structure, and an n-type semiconductor layer and a p-type semiconductor layer, formed to hold the active layer therebetween. The active layer includes at least a well layer containing InGaN, and at least two barrier layers formed to hold the well layer therebetween, and containing one of InGaN and GaN. The well layer is entirely doped with one of a group IV element and a group VI element. The respective barrier layer includes a first portion closer to the p-type semiconductor layer and a second portion closer to the n-type semiconductor layer. The first portion is doped with one of the group IV element and the group VI element. The second portion is undoped.

摘要翻译： 半导体发光元件包括量子阱结构的有源层，以及形成为将活性层保持在其间的n型半导体层和p型半导体层。 有源层至少包括含有InGaN的阱层，以及形成为将阱层保持在其间并且包含InGaN和GaN中的一个的至少两个势垒层。 阱层完全掺杂有IV族元素和VI族元素之一。 各个阻挡层包括靠近p型半导体层的第一部分和靠近n型半导体层的第二部分。 第一部分掺杂有IV族元素和VI族元素之一。 第二部分是未掺杂的。

公开(公告)号：US06670204B2

公开(公告)日：2003-12-30

申请号：US10235705

申请日：2002-09-06

申请人： Tetsuhiro Tanabe ,  Masayuki Sonobe

发明人： Tetsuhiro Tanabe ,  Masayuki Sonobe

IPC分类号： H01L2100

CPC分类号： H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.

公开(公告)号：US06469320B2

公开(公告)日：2002-10-22

申请号：US09864275

申请日：2001-05-25

申请人： Tetsuhiro Tanabe ,  Masayuki Sonobe

发明人： Tetsuhiro Tanabe ,  Masayuki Sonobe

IPC分类号： H01L2715

CPC分类号： H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.

摘要翻译： 在基板（1）上形成第一GaN层（2），在其上形成具有开口部（3a）的掩模层（3），从第二GaN层（4）的开口部 掩模层和氮化物型化合物半导体层叠部分（15）进一步层叠以形成发光层。 凹陷部分（3b）形成在掩模层的上表面侧。 换句话说，由于掩模层的上表面侧的凹部，第二GaN型化合物半导体层（4）生长成在第二GaN型化合物的底面之间形成大致平行的间隙（3c） 半导体层和掩模层。 此外，优选的是，掩模形成为使得种子露出的开口部分在晶片型基板的整个表面上不能沿单一方向连续布置。 因此，可以获得具有低位错密度和优异的发光效率的氮化物型化合物半导体发光器件，并且特别是可以获得具有降低的阈值电流值的半导体激光器。

公开(公告)号：US5404520A

公开(公告)日：1995-04-04

申请号：US55763

申请日：1993-05-03

申请人： Masayuki Sonobe

发明人： Masayuki Sonobe

IPC分类号： G06F3/06 ,  G06F9/46 ,  G06F17/30 ,  G06F13/00 ,  G06F15/16

CPC分类号： G06F9/544 ,  G06F17/30445

摘要： A batch type data input and output control system executes a file output program which outputs data to a file stored in an external storage unit from a main storage apparatus, and a file input program for processing the data in the file. An input/output parallel management means for managing parallel processing of the file output program and file input program and a data transfer unit are provided for transferring the data within the main storage unit without transferring the data through the external storage unit. The data written by the file output program is directly transmitted to the file input program, for instance in units of a character or record under control of the input/output parallel management means. The file output program and file input program are executed in parallel, and can be registered or deleted by designation of another program or a user. When one of the file output program and the file input program ends in an abnormal state, the other program is compulsorily ended. When both programs end in a normal manner and a subsequent program is designated, the subsequent program is automatically initiated.

摘要翻译： 批量型数据输入输出控制系统执行从主存储装置向存储在外部存储单元中的文件输出数据的文件输出程序，以及用于处理该文件中的数据的文件输入程序。 提供用于管理文件输出程序和文件输入程序的并行处理的输入/输出并行管理装置和数据传送单元，用于在主存储单元内传送数据而不通过外部存储单元传送数据。 由文件输出程序写入的数据直接发送到文件输入程序，例如以输入/输出并行管理装置的控制下的字符或记录为单位。 文件输出程序和文件输入程序并行执行，可以通过指定其他程序或用户进行注册或删除。 当其中一个文件输出程序和文件输入程序以异常状态结束时，其他程序被强制结束。 当两个程序以正常方式结束并指定后续程序时，自动启动后续程序。

公开(公告)号：US5377309A

公开(公告)日：1994-12-27

申请号：US799445

申请日：1991-11-27

申请人： Masayuki Sonobe ,  Ayumi Ishizaki ,  Tatsuo Kondoh

发明人： Masayuki Sonobe ,  Ayumi Ishizaki ,  Tatsuo Kondoh

IPC分类号： G06F9/06 ,  G06F9/44 ,  G06N5/04 ,  G06F15/18

CPC分类号： G06F8/20

摘要： A software work tool used in an information processor and realizing a general purpose software work tool capable of automatically performing a software operation based on the information regarding a program. The software work tool comprises a software operator for operating a program or data, a work knowledge storer for storing as a work knowledge the information for an operation by the software operator, a communicator for externally transmitting communication information including a work request or a work report, and a controller for controlling, based on the work knowledge stored in a work knowledge storer, the software operator, the work knowledge storer, and the communicator.

摘要翻译： 用于信息处理器中的软件工作工具，实现能够根据有关程序的信息自动执行软件操作的通用软件工作工具。 软件工作工具包括用于操作程序或数据的软件操作者，用于作为工作知识存储由软件操作者操作的信息的工作知识存储器，用于外部传送包括工作请求或工作报告的通信信息的通信器 以及控制器，用于基于存储在工作知识存储器中的工作知识，软件操作者，工作知识存储器和通信器来控制。